Transport characteristics of n-ZnO/p-Si heterojunction as determined from temperature dependent current–voltage measurements

Djiokap, S.R. Tankio; Urgessa, Z.N.; Mbulanga, C.M.; Venter, A.; Botha, J.R.

doi:10.1016/j.physb.2015.08.013

Cited by 8 publications

(1 citation statement)

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“…Growth and deposition of cost effective and non‐toxic materials by any of the simple chemical techniques have gained an enormous research interest, owing to their applications in advanced photovoltaic devices . Nanostructures of metal chalcogenides, especially, FeS, ZnS, and ZnO are the most important among all the sulfides and oxides . There are several physical and chemical techniques reported to date for the deposition of nanostructured thin films on a variety of substrates including thermal evaporation , electro‐deposition , hydrothermal method , sputtering , chemical spray‐pyrolysis , chemical bath deposition (CBD) , and aerosol assisted chemical vapor deposition (AACVD) .…”

Section: Introductionmentioning

confidence: 99%

Nanocrystalline and monophasic thin films of metal chalcogenide (FeS, ZnS) and oxide (ZnO) by chemical bath deposition (CBD)

Akhtar

Mehmood

Ahmad

et al. 2017

Phys. Status Solidi A

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FeS, ZnS, and ZnO nanostructured thin films have been deposited by Chemical Bath Deposition (CBD), a simple and cost effective technique. These materials with different morphologies such as nano‐flakes, nanoparticles and nanorods for FeS, ZnS, and ZnO, respectively were deposited onto the glass substrates. The crystallite sizes have been estimated from Scherrer's equation and were found to be 14 nm for nano‐flakes of FeS, 9.09 nm for nanoparticles of ZnS, and 49 nm for nanorods of ZnO. The average values of the band gaps were found to be 1.97, 3.43, and 3.74 eV for FeS, ZnO, and ZnS thin films, respectively. These nanostructured semiconducting materials have wide applications in advanced optoelectronic devices.

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