Transport anomaly at the ordering transition for adatoms on graphene

Kopylov, S. V.; Cheianov, Vadim; Altshuler, B. L.

doi:10.1103/physrevb.83.201401

Cited by 15 publications

(23 citation statements)

References 18 publications

(30 reference statements)

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“…At the scale of an entire graphene device, however, the observation of significant macroscopic transverse charge currents due to scattering with a large ensemble of top-position adatoms appears more challenging than the observation of a large SHE due to hollow-position adatoms because of the necessity of having an imbalance between the A and B sublattices. Nevertheless, it should be noted that sublattice ordering driven by Ruderman-Kittel-Kasuya-Yosida (RKKY) -type interactions below a critical temperature was predicted by several authors [48][49][50][51], so that the above-discussed CHE may in principle be observed in an experiment.…”

Section: Scattering With Top-position Adatomsmentioning

confidence: 99%

Scattering theory of spin-orbit active adatoms on graphene

et al. 2014

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The scattering of two-dimensional massless Dirac fermions from local spin-orbit interactions with an origin in dilute concentrations of physisorbed atomic species on graphene is theoretically investigated. The hybridization between graphene and the adatoms' orbitals lifts spin and valley degeneracies of the pristine host material, giving rise to rich spin-orbit coupling mechanisms with features determined by the exact adsorption position on the honeycomb lattice-bridge, hollow, or top position-and the adatoms' outer-shell orbital type. Effective graphene-only Hamiltonians are derived from symmetry considerations, while a microscopic tight-binding approach connects effective low-energy couplings and graphene-adatom hybridization parameters. Within the T -matrix formalism, a theory for (spin-dependent) scattering events involving graphene's charge carriers, and the spin-orbit active adatoms is developed. Spin currents associated with intravalley and intervalley scattering are found to tend to oppose each other. We establish that under certain conditions, hollow-position adatoms give rise to the spin Hall effect, through skew scattering, while top-position adatoms induce transverse charge currents via trigonal potential scattering. We also identify the critical Fermi energy range where the spin Hall effect is dramatically enhanced, and the associated transverse spin currents can be reversed.

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Section: Scattering With Top-position Adatomsmentioning

confidence: 99%

Scattering theory of spin-orbit active adatoms on graphene

et al. 2014

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“…(11) into Eq. (10) gives (13) Therefore, the binding energy change has the form (14) The initial parameters of the problem for single layer graphene are given in Table 1. The values of for a single layer graphene are given in Fig.…”

Section: Energy Of Substitution Of Atoms 877mentioning

confidence: 99%

“…This can simply be achieved using adsorption or intercalation (see, for example, references to works in [9][10][11], published before 2011, and also recent works in this field [12][13][14][15]). In [16], a method of direct doping was proposed: formation of substitutional defects by replacing car bon atoms with Group III and V atoms.…”

Section: Introductionmentioning

confidence: 99%

Energy of substitution of atoms in the epitaxial graphene-buffer layer-SiC substrate system

Davydov

2012

Phys. Solid State

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The binding energy of atom X (X = B, Al, Ga, In, N, P, As, Sb) substituting for carbon atoms in single layer graphene, a buffer layer, and on the ( ) surface of SiC substrate or for a silicon atom on the (0001) surface of SiC substrate has been studied by the Harrison bond orbital method. In terms of a simple model based on atomic radii, the contribution of the strain energy due to relaxation of an impurity bond has been considered. The expressions have been obtained for the difference between the energies of substitution for a carbon atom in the buffer layer and in single layer graphene and in the case of substitution for silicon and carbon atoms on the SiC substrate surface.

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“…There is much to be learned about this unusual electronic structure by considering the change in the LDOS and the FO in the excess charge density due to a well localized impurity. Results of these considerations have implications for the LDOS in disordered graphene [4,5], for the interaction between adatoms in graphene [6][7][8], or in case of magnetic adatoms [9] for the corresponding RKKY interaction [10,11]. Research on topological insulators also profit from the ideas developed for graphene due to similarities in their electronic structure [12].…”

Section: Basics Of Graphenementioning

confidence: 95%

“…Using (7) in (6) we obtain ρ(ε, r) = πuρ 2 0 (ε)Img 2 (kr) (8) for the change in the LDOS. Moreover, from (3) and (8) the change in the electron density (FO) at zero temperature is evaluated for large distances (k F r 1) from the impurity as…”

Section: Free Electronsmentioning

confidence: 98%

Friedel Oscillations Around a Short Range Scatterer: The Case of Graphene

Virosztek

Bácsi

2012

J Supercond Nov Magn

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We review the basic theory of Friedel oscillations around a well localized impurity using Green's function technique in Born approximation. After a pedagogical presentation of the case of free electrons in various dimensions, we turn our attention to graphene, which is described by a tight-binding scheme. Utilizing the localized nature of the atomic wavefunctions we calculate the change in the electronic density due to the impurity, and identify, in addition to the slowly decaying long wavelength oscillations, a short wavelength pattern as well. The latter, being of opposite sign on the two sublattices of graphene, may cancel the leading inverse square envelope of the long wavelength oscillations, if a probe with resolution worse than a few unit cells is used. We corroborate these findings by exact diagonalization results on a 21 × 21 unit cell graphene sheet.

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Transport anomaly at the ordering transition for adatoms on graphene

Cited by 15 publications

References 18 publications

Scattering theory of spin-orbit active adatoms on graphene

Scattering theory of spin-orbit active adatoms on graphene

Energy of substitution of atoms in the epitaxial graphene-buffer layer-SiC substrate system

Friedel Oscillations Around a Short Range Scatterer: The Case of Graphene

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