Transport and spin conversion of multicarriers in semimetal bismuth

Emoto, Hiroyuki; Ando, Yoshinori; Eguchi, G.; Ohshima, Ryo; Shikoh, Eiji; Fuseya, Yuki; Shinjo, Teruya; Shiraishi, Masashi

doi:10.1103/physrevb.93.174428

Cited by 46 publications

(43 citation statements)

References 18 publications

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“…It is important to mention that the voltage measured in Fig 4(d) with micro-wave power of 80 mW is almost one order of magnitude greater than the values reported in Ref [38], where it was applied a rf power of 150 mW. The asymmetry between the positive and negative peaks is similar to that observed in other bilayer systems and can be attributed to a thermoelectric effect 70,71 . Fig 4(e) shows the field scan of spin pumping voltage spectra for different input microwave power obtained for the = 0° configuration.…”

Section: -Spin-pumping Experimentssupporting

confidence: 64%

Direct detection of induced magnetic moment and efficient spin-to-charge conversion in graphene/ferromagnetic structures

et al. 2019

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This article shows that the spin-to-charge current conversion in single-layer graphene (SLG) by means of the inverse Rashba-Edelstein effect (IREE) is made possible with the integration of this remarkable 2D-material with the unique ferrimagnetic insulator yttrium iron garnet (YIG = Y3Fe5O12) as well as with the ferromagnetic metal permalloy (Py = Ni81Fe19). By means of X-ray absorption spectroscopy (XAS) and magnetic circular dichroism (XMCD) techniques, we show that the carbon atoms of the SLG acquires an induced magnetic moment due to the proximity effect with the magnetic layer. The spin currents are generated in the magnetic layer by spin pumping from microwave driven ferromagnetic resonance and are detected by a dc voltage along the graphene layer, at room temperature. The spin-to-charge current conversion, occurring at the graphene layer, is explained by the extrinsic spin-orbit interaction (SOI) induced by the proximity effect with the ferromagnetic layer. The results obtained for the SLG/YIG and SLG/Py systems confirm very similar values for the IREE parameter, which are larger than the values reported in previous studies for SLG. We also report systematic investigations of the electronic and magnetic properties of the SLG/YIG by means of scanning tunneling microscopy (STM).

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Section: -Spin-pumping Experimentssupporting

confidence: 64%

Direct detection of induced magnetic moment and efficient spin-to-charge conversion in graphene/ferromagnetic structures

et al. 2019

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“…In contrast, µ h and µ e both decrease with increasing temperature, obeying a power law that scales with ∼ T −0.5 . These results indicate a competition between the impurity-mediated (∝ T 1.5 ) and electron-phonon that contain significantly higher defect density compared to that of the bulk samples [36]. compared to that shown in Fig.…”

Section: Bisb Thickness Dependence Of σ Shmentioning

confidence: 60%

The spin Hall effect of Bi-Sb alloys driven by thermally excited Dirac-like electrons

Chi

Lau

et al. 2020

Sci. Adv.

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We have studied the charge to spin conversion in Bi 1−x Sb x /CoFeB heterostructures. The spin Hall conductivity (SHC) of the sputter deposited heterostructures exhibits a high plateau at Bi-rich compositions, corresponding to the topological insulator phase, followed by a decrease of SHC for Sb-richer alloys, in agreement with the calculated intrinsic spin Hall effect of Bi 1−x Sb x alloy. The SHC increases with increasing thickness of the Bi 1−x Sb x alloy before it saturates, indicating that it is the bulk of the alloy that predominantly contributes to the generation of spin current; the topological surface states, if present in the films, play little role. Surprisingly, the SHC is found to increase with increasing temperature, following the trend of carrier density. These results suggest that the large SHC at room temperature, with a spin Hall efficiency exceeding 1 and an extremely large spin current mobility, is due to increased number of Dirac-like, thermally-excited electrons in the L valley of the narrow gap Bi 1−x Sb x alloy.

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“…In SP experiments on Bi/permalloy at room temperature [19], using the ferromagnetic (FM) metal permalloy (Ni 81 Fe 19 ) as the spin injector, the transverse DC voltage measured at FMR has been taken as evidence of spin-to-charge conversion, resulting in a substantial θ SH = 0.02 for Bi. However, SP experiments on Bi/YIG [20], using the ferrimagnetic insulator YIG (yttrium iron garnet, Y 3 Fe 5 O 12 ), concludes instead an extremely small θ SH = 0.00012, two orders of magnitude smaller. Both SP experiments have concluded a rather long spin diffusion length λ SD in Bi of 50 nm and 20 nm, respectively.…”

mentioning

confidence: 99%

“…Bismuth (Bi) is the heaviest non-radioactive element in the Periodic Table. It is natural to exploit the large SOC in Bi metal [19,20] and Bi-containing materials [21][22][23][24][25][26][27][28][29][30][31][32] for spin current phenomena. However, there are already conflicting results even in Bi metal and bilayers.…”

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confidence: 99%

Spin-to-Charge Conversion in Bi Films and Bi/Ag Bilayers

Yue

Lin

et al. 2018

Phys. Rev. Lett.

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Thermally injected pure spin current phenomena have been investigated in Bi/Y_{3}Fe_{5}O_{12} and Bi/Ag/Y_{3}Fe_{5}O_{12} structures at room temperature. We show that although pure spin current has been injected into the Bi layer and the Bi/Ag bilayer, there is little detectable signal of spin-to-charge conversion, except the distinctive Nernst signal from the Bi layer, in sharp contrast to the inverse Rashba-Edelstein effect claimed in these systems.

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Transport and spin conversion of multicarriers in semimetal bismuth

Cited by 46 publications

References 18 publications

Direct detection of induced magnetic moment and efficient spin-to-charge conversion in graphene/ferromagnetic structures

Direct detection of induced magnetic moment and efficient spin-to-charge conversion in graphene/ferromagnetic structures

The spin Hall effect of Bi-Sb alloys driven by thermally excited Dirac-like electrons

Spin-to-Charge Conversion in Bi Films and Bi/Ag Bilayers

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