Transport and reaction behaviour in Aix-2000 planetary metalorganic vapour phase epitaxy reactor

The kinetics of parasitic growth in GaAs MOVPE

“…It is expected that the rough surfaces during deposition in the experiments increased the growth rate due to the larger surface area relative to a more 2D surface. Both experimental and calculated growth rates are similar to that measured by Bergunde et al [2], who calculated the minimum ceiling temperature to be 300 1C, where the measured growth rate was 0.01 nm s À1 . The minimum growth rate from the present experimental data was obtained at 450 1C and at V/III ratio of 50, with a growth rate of 0.011 nm s À1 .…”

“…When Bergunde et al [2] used a variable H 2 /Ar cooling gas mixture, the measured maximum growth rate of the parasitic growth was 0.19 nm s À1 . The minimum was 0.01 nm s À1 , where the top plate temperature was calculated to be 300 1C.…”

Interpretation of Absolute Laser Reflectance During Optical Monitoring of Polycrystalline GaAs Deposition on Quartz Using Metalorganic Chemical Vapor Deposition

“…Investigations into III-V deposition at reactor walls [18][19][20] by MOCVD were the basis for experiments carried out by Weeks et al 12,13 who demonstrated LR to have the capability to measure simultaneously both epitaxial and parasitic growth of AlGaAs in a planetary Aix-2400 8x3 susceptor reactor. For this reason, LR was chosen for the study reported in this paper, where interpretation of GaAs deposition from multiple surfaces can be individually identified.…”

Uniformity Control in Planetary Chemical Vapor Deposition Reactor Systems

“…Typically, these studies include detailed, twodimensional steady-state models of reactor heat transfer, reactant gas flow and chemical species reaction and transport. For example, starting chronologically from Frijlink [1988], Bergunde, et al [1995] compared simulator predictions to experimentally measured film growth profiles and studied the effects of total gas flow and temperature on film growth. Jurgensen [1996] used a two-dimensional model of gas phase transport to study NH 3 gas phase decomposition in the production of GaN films.…”