Transport and optical properties of the gapless Heusler compound PtYSb

Ouardi, Siham; Fecher, Gerhard H.; Felser, Claudia; Hamrle, Jaroslav; Postava, Kamil; Pištora, Jaromı́r

doi:10.1063/1.3663569

Cited by 25 publications

(30 citation statements)

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“…The weak temperature dependence of resistivity has also been observed in bulk YPtSb and other half-Heusler semiconductors [16], a trend markedly different from that in the case of conventional semiconductor materials such as Si. [10,[17][18][19] As seen in Fig. 3(a) the resistivity increased from 500 • C deposition temperature to 700 • C, mainly because of the decreasing carrier density with an increase in deposition temperature ( Fig.…”

Section: Resultsmentioning

confidence: 88%

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Fabrication and characterization of semiconducting half‐Heusler YPtSb thin films

Shan

Vilanova

Qin

et al. 2012

Physica Rapid Research Ltrs

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The semiconducting half-Heusler compound YPtSb has been predicted to convert into a topological insulator under the application of an appropriate degree of strain. In this study, p-type semiconducting YPtSb thin films were prepared by magnetron co-sputtering, using a specially designed target. YPtSb thin films grown on MgO (100) substrates at 600 • C showed a textured structure with the (111) plane parallel to the (001) plane of MgO. Electrical measurements showed that the resistivity of the YPtSb films decreases with increasing temperature, indicating semiconductor-like behavior. The carrier density was as high as 1.15×10 21 cm −3 at 300 K. The band gap of the YPtSb thin films was around 0.1-0.15 eV, which was in good agreement with the theoretical prediction and the value measured for bulk YPtSb.PACS numbers:

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Section: Resultsmentioning

confidence: 88%

“…[10][11][12][13] The first thin film of LaPtBi was grown on a YAlO 3 substrate by three-source magnetron co-sputtering. [14] The TI state could also be induced in half-Heusler semiconductors comprising lighter elements, such as …”

Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of semiconducting half‐Heusler YPtSb thin films

Shan

Vilanova

Qin

et al. 2012

Physica Rapid Research Ltrs

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“…Among the experimentally studied TI candidates of half-Heusler materials, the gapless YPtSb is found to exhibit very good thermoelectric properties with a high figure of merit ZT of 0.2 and the high 3 Hall mobility, and thus has become the potential material of choice for both experimental and theoretical studies. 22,23 Development of devices utilizing TIs will require accurate characterization of the electronic transport. However, no transport investigation on the half-Heusler YPtSb thin films was carried out so far.…”

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confidence: 99%

“…We found that the µ e reaches a constant value of ∼450 cm 2 /Vs at 300 K, which is higher than the bulk value of YPtSb (∼300 cm 2 /Vs). 22 Here we should point out that the μ e strongly depends on thickness for thin films but becomes independent of film thickness beyond 5 μm approaching its bulk value. The enhanced mobility is therefore attributed to overall scattering due to grain boundaries and surface effects.…”

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Fabrication and characterization of the gapless half-Heusler YPtSb thin films

Wang

Liu

et al. 2012

Journal of Applied Physics

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Half-Heusler YPtSb thin films were fabricated by magnetron co-sputtering method on MgO-buffered SiO 2 /Si(001) substrates. X-ray diffraction pattern and Energy dispersive X-ray spectroscopy confirmed the high-quality growth and stoichiometry.The temperature dependence of the resistivity shows a semiconducting-type behavior down to low temperature. The Hall mobility was determined to be 450 cm 2 /Vs at 300K, which is much higher than the bulk value (∼300 cm 2 /Vs). In-plane magnetoresistance (MR) measurements with fields applied along and perpendicular to the current direction show opposite MR signs, which suggests the possible existence of the topological surface states.PACS numbers: 71.20.Gj; 73.20 .At ---------------------------------------------------------------a) Electronic mail: wenhong.wang@iphy.ac.cn 2 Topological insulators (TIs) are of a new class of materials, which has a bulk band gap generated by strong spin-orbit coupling but contains gapless surface states. [1][2][3] Uniquely these states are robust with respect to disorder and exhibit high mobility due to the suppression of carrier backscattering. In addition, theses sates are spin-momentum locked, making TIs attractive for future spintronic devices and quantum computing applications as well. 4,5 Since the first theoretical prediction of a two-dimensional TI in an HgTe based quantum well, 6,7 several other families of materials for three-dimensional (3D) TIs have been proposed theoretically and well-studied experimentally. [8][9][10][11][12][13][14][15][16] For example, tetradymite semiconcuctors, such as Bi 2 Te 3 , Bi 2 Se 3 , and Sb 2 Te 3 are confirmed to be 3D TI with a single Dirac-cone on the surface, where the bulk band gap is as large as 0.3 eV, making the room temperature application possible. [8][9][10][11][12] However, a clear shortcoming of Bi 2 Te 3 family is that these materials cannot be made with coexisting magnetism, a much desired property for spintronic applications. Although doping can be used to achieve the magnetically ordered behavior, 17 this creates extra complexity in material growth and could introduce detrimental effects upon doping.Recently, half-Heusler ternary compounds with 18 valence electrons has been predicted to be 3D TI by alloying or proper stain engineering. [18][19][20][21] Most importantly, it was proposed that in the half-Heusler family the topological insulator allows the incorporation of superconductivity and/or magnetism. Among the experimentally studied TI candidates of half-Heusler materials, the gapless YPtSb is found to exhibit very good thermoelectric properties with a high figure of merit ZT of 0.2 and the high 3 Hall mobility, and thus has become the potential material of choice for both experimental and theoretical studies. 22,23 Development of devices utilizing TIs will require accurate characterization of the electronic transport. However, no transport investigation on the half-Heusler YPtSb thin films was carried out so far. The aim of this work is to try the way to obtain high quality YPtS...

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Theoretical investigation of novel half Heusler compounds MRhSb (M = Nb & Ta): For optoelectronic and thermoelectric applications

Hamli

Bensaid

Benkada

et al. 2021

Int J of Quantum Chemistry

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The main objective of this work is to make a detailed study on a new class of half heuslers which possess a 19 valence electron and which are sought for perpetually because of their thermoelectric performances. The mechanical, electronic structures, optical, and electrical transport properties are studied using full potential linearized augmented plane wave (LAPW) + local orbitals (lo) scheme, in the framework of density functional theory (DFT) with generalized gradient approximation (GGA) for the purpose of exchange correlation energy functional. The electronic structure is treated by the TB-mBJ exchange-correlation potentials. The independent elastic constants and the related mechanical properties are investigated. From the energy bands and density of states it is observed that the 3d-states of Nb, Ta, and Rh atoms contribute mainly to the conduction band, which results in increase in electrical and thermal conductivity of NbRhSb and TaRhSb . The optical constants as the dielectric function, refractive index, optical reflectivity, and absorption coefficient were calculated and discussed in detail. The dependence of Seebeck coefficient, electrical conductivity, and power factor on the Fermi level is investigated.electronic structure, half-Heusler alloys, optical properties, thermoelectric transport properties | INTRODUCTIONThermoelectricity is proposed as one of the possible ways to address energy problems (the energy crisis and the environmental impact) [1-3]. For this reason, research in recent decades is concentrated on the thermoelectric half-Heusler materials, since they possess a wide variety of interesting physical properties [4][5][6][7][8]. The advantage of these materials is to convert heat directly into electricity without any other means. For reaching such material it is necessary that the material bears a maximum value of figure of merit ZT (At this time, the best reliable maximum thermoelectric figure of merit ZT max for MNiSn-related compounds is about .7 [9] with one reported ZT max >1 [10]). Generally, half-Heusler materials are considered to be promising thermoelectric materials due to their high temperature stability and because of their relatively large Seebeck coefficient and electrical conductivity, and therefore, high power factors. Among the half-Heusler alloys which possess a maximum power factor and which are determined experimentally, the alloys based on TiCoSb, TiFe x Co 1-x Sb [11], and the ZrNiSn-based alloys, [9] their power factor are 23 μW/cmK 2 at 850 K and 34 μW/cmK 2 at 750 K, respectively. Based on the first-principles calculations J. Yang et al [12] concludes that the HHs of Co, Rh, Fe, and LaPdBi are good the thermoelectric materials due their maximum power factors. On purely experimental techniques Lkhagvasuren et al

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Transport and optical properties of the gapless Heusler compound PtYSb

Cited by 25 publications

References 20 publications

Fabrication and characterization of semiconducting half‐Heusler YPtSb thin films

Fabrication and characterization of semiconducting half‐Heusler YPtSb thin films

Fabrication and characterization of the gapless half-Heusler YPtSb thin films

Theoretical investigation of novel half Heusler compounds MRhSb (M = Nb & Ta): For optoelectronic and thermoelectric applications

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