In highsuperconductors, being layered, doped Mott insulators, in-plane weak links occur easily in preparation and in growth, and are prone to deteriorate further. CuO-plane weak links are the major obstacles for HTS transport currents, both dc and rf. Weak links are tunnel junctions showing reduced critical Josephson currents (A/cm 2 ), enhanced normal (cm 2 ) and leakage resistances ( ) , where the degradation of 1 is specific to HTS. The ease of occurrence of weak links and their degradations are consequences of the transition to a Mott-insulator seam by reduced wave function overlap at surfaces, by underdoping, and by spatial or bonding disorder. The degradations show up in exp( 2 ), in (1 10 )exp( ), and in 2 2 = 10 12 Vcm 2 for all NCCO, YBCO, BSCCO, and TBCCO junctions grown naturally or artificially to date, with 0 2 nm as tunnel barrier width of height 2 eV, and with 10 21 /cm 3 localized states causing 1 . For the first time their , and 2 degradations are quantified by the resonant tunnel model, even for interface engineered junctions (IEJ), in agreement with experimental data. Comparison of HTS junctions with Nb/Nb 2 O 5 and Nb/Al/AlO (OH) junctions shows ways out of the interface chemistry deadlock.