Transport and magnetotransport study of Mg doped ZnO thin films

Agrawal, Arpana; Dar, Tanveer Ahmad; Sen, Pratima; Phase, D. M.

doi:10.1063/1.4870864

Cited by 21 publications

(20 citation statements)

References 16 publications

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“…The origin of NL absorption has been examined in details in our theoretical analysis. From the knowledge of NLA of the grown samples, we have also determined the imaginary part of third order optical NL susceptibility (Im[χ (3) ]) using the relation; Im[χ (3) ] = o cn 2 o λβ/2π [14]. Here o , c, and n o are the permitivity of free space, speed of light in vacuum and the sample's refractive index, respectively.…”

Section: Results and Discussion 31 Experimental Resultsmentioning

confidence: 99%

“…Here o , c, and n o are the permitivity of free space, speed of light in vacuum and the sample's refractive index, respectively. The obtained values of Im[χ (3) ] are given in Table 1.…”

Section: Results and Discussion 31 Experimental Resultsmentioning

confidence: 99%

“…The NL RI as well as the real part of the third order optical NL susceptibility (Re[χ (3) ]) has been obtained from the CA z-scan experiment. Figure 4 exhibits the normalized transmittance as a function of distance near the focal region of the lens.…”

Section: Results and Discussion 31 Experimental Resultsmentioning

confidence: 99%

“…Obtaining the values of n (exp.) 2 for all the films, we now calculate Re[χ (3) ] as Re[χ (3) [14]. The estimated values of Re[χ (3) ] are also given in Table 1.…”

Section: Results and Discussion 31 Experimental Resultsmentioning

confidence: 99%

“…2 for all the films, we now calculate Re[χ (3) ] as Re[χ (3) [14]. The estimated values of Re[χ (3) ] are also given in Table 1. However, we have explored other mechanisms also for examining the NL RI dependence in our theoretical analysis.…”

Section: Results and Discussion 31 Experimental Resultsmentioning

confidence: 99%

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Study of nonlinear optical properties of pure and Mg-doped ZnO films

Agrawal

Dar

Solanki

et al. 2015

Phys. Status Solidi B

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We report the nonlinear optical properties in pulsed laser deposited pure and Mg‐doped ZnO films at an excitation energy (≈1.95 eV) much smaller than the band gap energies (≥3.24 eV) of the films. The nonlinear absorption is attributed to the presence of defect states whereas the nonlinear refraction arises due to thermal lensing effect. Larger contribution of nonlinear absorption compared to nonlinear refraction suggests the utility of Mg‐doped ZnO films in optical limiting device applications.

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Section: Results and Discussion 31 Experimental Resultsmentioning

confidence: 99%

“…Here o , c, and n o are the permitivity of free space, speed of light in vacuum and the sample's refractive index, respectively. The obtained values of Im[χ (3) ] are given in Table 1.…”

Section: Results and Discussion 31 Experimental Resultsmentioning

confidence: 99%

Section: Results and Discussion 31 Experimental Resultsmentioning

confidence: 99%

“…Obtaining the values of n (exp.) 2 for all the films, we now calculate Re[χ (3) ] as Re[χ (3) [14]. The estimated values of Re[χ (3) ] are also given in Table 1.…”

Section: Results and Discussion 31 Experimental Resultsmentioning

confidence: 99%

Section: Results and Discussion 31 Experimental Resultsmentioning

confidence: 99%

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Study of nonlinear optical properties of pure and Mg-doped ZnO films

Agrawal

Dar

Solanki

et al. 2015

Phys. Status Solidi B

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Qualitative Analysis of the Valence and Conduction Band Offset Parameters in FeNiO/CuNiO Bilayer Film Using X‐Ray Photoelectron Spectroscopy

Chouhan

Agrawal²,

Gupta

et al. 2021

Physica Status Solidi (b)

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The valence and conduction band offset in FeNiO/CuNiO bilayer film are studied utilizing X‐ray photoelectron spectroscopy and UV–vis spectroscopy. The bilayer film is grown on Si substrate employing ion beam sputtering technique using a mixture of argon and oxygen gases at 25% oxygen partial pressure. From the precise knowledge of the valence band maxima energies and core‐level energy positions in the single‐layer film and the corresponding shifts in the bilayer film, the valence and conduction band offsets are estimated to be 0.8 and 0.3 eV, respectively. From the computed band offset data, a type‐I band alignment is identified at the interface of the grown bilayer film, which facilitates the knowledge of carrier transport mechanism and is highly attractive for the realization of efficient room‐temperature optoelectronic device.

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Optoelectronic and birefringence properties of weakly Mg-doped ZnO thin films prepared by spray pyrolysis

Bouachiba

Mammeri

Bouabellou

et al. 2022

J Mater Sci: Mater Electron

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Mgx Zn 1−x O thin lms were deposited on glass substrate with x varied between 0.01 and 0.05 by spray pyrolysis at a temperature of 450 °C. The structural investigation showed that all thin lms had ZnO wurtzite structure with a preferred (002) orientation. The gap energy was calculated using Tauc's plot and it decreased over the Mg content by 0.07 eV. The charge carriers' density dropped by an order of 10 5 as Mg content increased whereas the resistivity and the mobility increased. SEM observations revealed a signi cant difference between undoped and doped thin lms. A 632.8 nm laser source prism coupler revealed 2 optical modes for every thin lm in each Transverse Electric and Transverse Magnetic mode, the birefringence of the Mg doped lms was positive. Both ordinary and extraordinary refractive indexes were found to decrease as the Mg content increased. Great intention has been paid to the relation between the refractive, charge carriers density and the optical band gap.

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Transport and magnetotransport study of Mg doped ZnO thin films

Cited by 21 publications

References 16 publications

Study of nonlinear optical properties of pure and Mg-doped ZnO films

Study of nonlinear optical properties of pure and Mg-doped ZnO films

Qualitative Analysis of the Valence and Conduction Band Offset Parameters in FeNiO/CuNiO Bilayer Film Using X‐Ray Photoelectron Spectroscopy

Optoelectronic and birefringence properties of weakly Mg-doped ZnO thin films prepared by spray pyrolysis

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