Transport and angular resolved photoemission measurements of the electronic properties of In2O3 bulk single crystals

Scherer, V.; Janowitz, C.; Krapf, A.; Dwelk, H.; Braun, Dorothee; Manzke, R.

doi:10.1063/1.4719665

Cited by 70 publications

(74 citation statements)

References 33 publications

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“…However, in the past couple of years at least three groups have grown single crystals using chemical vapour transport [137,138], crystallisation from a B 2 O 3 / PbO flux [139] or simple melt growth [140,141]. These crystals are now being used in photoemission and other surface studies [137][138][139] and as substrates for growth of materials such as InN [142]. It is anticipated that in the next few years there will be a growing body of work based on study of bulk single crystal surfaces.…”

Section: Materials Preparationmentioning

confidence: 99%

“…12.14 ARPES of ion bombarded but nominally undoped In 2 O 3 (111) measured at two different photon energies showing presence of two sub-bands in the spectra. Adapted with permission from [177] value was found when analysing ARPES from nominally undoped bulk single crystal samples of In 2 O 3 , although the crystals used in this work already had a degenerate bulk carrier density and it was assumed that the bulk conduction band rather than a 2D electron gas was being investigated [138]. .…”

Section: Materials Preparationmentioning

confidence: 99%

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Dopant and Defect Induced Electronic States at In2O3 Surfaces

Egdell

2015

Defects at Oxide Surfaces

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This article reviews the impact of defects and doping on the surface electronic structure of indium oxide, a wide gap oxide semiconductor which under degenerate doping becomes an important transparent conducting material. Topics covered include recent evidence for carrier accumulation at In 2 O 3 surfaces when there is a low bulk doping level and the profound effects of doping on core and valence photoemission spectra. The importance of molecular beam epitaxy in growth of single crystal samples is emphasised. IntroductionTransparent conducting oxides (TCOs) combine the usually orthogonal properties of optical transparency in the visible region with a high electrical conductivity [1][2][3][4]. TCOs already find widespread application as the window electrode in display devices including liquid crystal displays and electroluminescent display devices. A TCO electrode is also an essential component in many designs of solar cell [5,6]. In addition there is a growing interest in "transparent electronics" where TCO materials are employed in a more active role, for example in light emitting diodes [7] or lasers operating in the ultraviolet regime. The TCO market is worth around $1.6 billion per annum, with upward of 80 % of this sum based on LCD displays. Indium oxide (In 2 O 3 ) is amenable to n-type doping with Sn to give a prototype TCO usually-but somewhat misleadingly-referred to as indium tin oxide or ITO. At present ITO dominates the TCO market as the material offers a better combination of conductivity and transparency than alternatives such as doped ZnO or SnO 2 . In principle, doped CdO could achieve better performance [8], but Cd is highly toxic. Despite some recent reports of respiratory disease and even deaths [9] among workers in the ITO industry, indium is generally regarded as relatively

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Section: Materials Preparationmentioning

confidence: 99%

Section: Materials Preparationmentioning

confidence: 99%

Dopant and Defect Induced Electronic States at In2O3 Surfaces

Egdell

2015

Defects at Oxide Surfaces

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“…The most likely explanation for this phenomenon is that the mobility of the charge carriers increased with a decreasing temperature. Several studies have shown that, when the temperature was decreased in the dark, the concentration and mobility of [35][36][37].…”

Section: Resultsmentioning

confidence: 99%

Temperature-dependent Photoconductance and Optical Properties of In2O3 Thin Films Prepared by Autowave Oxidation

Maygkov¹,

Ivanenko²,

Тамбасов³

et al. 2017

J. Sib. Fed. Univ., Math. phys.

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“…Our commissioning tests showed that the beamline delivers high spectral purity photons in the VUV region. This performance allowed us to perform high quality angle-resolved photoemission measurements, utilizing bending magnet radiation in the VUV region [18][19][20][21][22][23]. Additionally, very first measurements on solid samples employing a 2400 l/mm grating for low photon energies below 10 eV (UV regime) and concomitant high bulk sensitivity were successfully performed on transparent conducting oxides like In 2 O 3 .…”

Section: Discussionmentioning

confidence: 99%