Transparent-flexible thermoelectric module from In/Ga co-doped ZnO thin films

Vora–ud, Athorn; Phạm, Anh Tuấn; Truong, Dai Cao; Thoawankeaw, Somporn; Lai, Hoa Thi; Le, Tung; Tran, Nhat Quang Minh; Insawang, Mekhala; Muthitamongkol, Pennapa; Horprathum, Mati; Kumar, Manish; Park, Sungkyun; Snyder, G. Jeffrey; Seetawan, Tosawat; Phan, Thắng Bách

doi:10.1016/j.cej.2023.142954

Cited by 8 publications

(2 citation statements)

References 82 publications

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“…The adoption of thermoelectric materials hinges not only on their energy conversion efficiency but also on their durability against mechanical vibrations and thermal cycles . Recently, the demand for flexible electronic devices, such as health monitors, wearable sensors, and artificial skin, has highlighted the need for materials that are high-performing and have high ductility. − Unfortunately, most thermoelectric materials, like Bi 2 Te 3 , − PbTe, − and SiGe, − are brittle inorganic compounds that are easily prone to fracture under thermal stress and mechanical loads due to their covalent and ionic bonding nature. − …”

Section: Introductionmentioning

confidence: 99%

High Ductility and Excellent Thermoelectric Performance in Te-Stabilized Cubic Ag₂Te_xS_1–x Solid Solutions

Zhong,

Luo,

Liu

et al. 2024

ACS Appl. Mater. Interfaces

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The stabilization at low temperatures of the Ag 2 S cubic phase could afford the design of high-performance thermoelectric materials with excellent mechanical behavior, enabling them to withstand prolonged vibrations and thermal stress. In this work, we show that the Ag 2 Te x S 1−x solid solutions, with Te content within the optimal range 0.20 ≤ x ≤ 0.30, maintain a stable cubic phase across a wide temperature range from 300 to 773 K, thus avoiding the detrimental phase transition from monoclinic to cubic phase observed in Ag 2 S. Notably, the Ag 2 Te x S 1−x (0.20 ≤ x ≤ 0.30) samples showed no fractures during bending tests and displayed superior ductility at room temperature compared to Ag 2 S, which fractured at a strain of 6.6%. Specifically, the Ag 2 Te 0.20 S 0.80 sample demonstrated a bending average yield strength of 46.52 MPa at 673 K, significantly higher than that of Ag 2 S, whose bending average yield strength dropped from 80.15 MPa at 300 K to 12.66 MPa at 673 K. Furthermore, the thermoelectric performance of the Ag 2 Te x S 1−x (0.20 ≤ x ≤ 0.30) samples surpassed that of both InSe and pure Ag 2 S, with the Ag 2 Te 0.30 S 0.70 sample achieving the highest ZT value of 0.59 at 723 K. These results indicate substantial potential for practical applications due to enhanced durability and thermoelectric performance.

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Section: Introductionmentioning

confidence: 99%

High Ductility and Excellent Thermoelectric Performance in Te-Stabilized Cubic Ag₂Te_xS_1–x Solid Solutions

Zhong,

Luo,

Liu

et al. 2024

ACS Appl. Mater. Interfaces

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“…Figure (c) displays the Ga-2 p 3/2 and Ga-2 p 1/2 doublets around 1117.0 and 1143.5 eV, respectively. These energy positions are in good agreement with the reported values for the +3 oxidation state of Ga . It is noteworthy that the Ga atomic concentration estimated using XPS linearly scales with the Ga concentration (mol %) in the PLD target as shown in Figure (d).…”

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confidence: 99%

Large Electrical Conductivity and Thermoelectric Power Factor of Pulsed Laser-Deposited Zn_1–xGa_xO Thin Films

Jayaseelan,

Mani,

Eswaran

2024

ACS Appl. Energy Mater.

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Developing highly efficient transparent thermoelectric oxide thin films is the key for futuristic devices, including ecofriendly portable and sustainable electronic devices. In this paper, we report a large thermoelectric power factor of pulsed laser-deposited ZnO and Ga-doped ZnO thin films. Nearly a 40-fold enhancement in electrical conductivity from 118 S cm −1 (ZnO) to 5050 S cm −1 (Zn 0.98 Ga 0.02 O) is realized with Ga doping. We show that a thermoelectric power factor as high as ∼2.8 and 2.1 mW m −1 K −2 can be achieved for ZnO and Zn 0.97 Ga 0.03 O thin films, respectively, at temperatures ≥640 K. Our findings suggest that the observed large thermoelectric power factor is a result of enhanced electrical conductivity due to the presence of substantial native oxygen vacancy defects (V O ) in the Zn 1−x Ga x O thin films. Our results may facilitate the realization of highperformance transparent solid-state thin film thermoelectric devices.

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Synergistic Combination of Sb₂Si₂Te₆ Additives for Enhanced Average ZT and Single‐Leg Device Efficiency of Bi_0.4Sb_1.6Te₃‐based Composites

Tan,

Dong,

Liu

et al. 2024

Advanced Science

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Thermoelectric materials are highly promising for waste heat harvesting. Although thermoelectric materials research has expanded over the years, bismuth telluride‐based alloys are still the best for near‐room‐temperature applications. In this work, a ≈38% enhancement of the average ZT (300−473 K) to 1.21 is achieved by mixing Bi0.4Sb1.6Te3 with an emerging thermoelectric material Sb2Si2Te6, which is significantly higher than that of most BiySb2−yTe3‐based composites. This enhancement is facilitated by the unique interface region between the Bi0.4Sb1.6Te3 matrix and Sb2Si2Te6‐based precipitates with an orderly atomic arrangement, which promotes the transport of charge carriers with minimal scattering, overcoming a common factor that is limiting ZT enhancement in such composites. At the same time, high‐density dislocations in the same region can effectively scatter the phonons, decoupling the electron‐phonon transport. This results in a ≈56% enhancement of the thermoelectric quality factor at 373 K, from 0.41 for the pristine sample to 0.64 for the composite sample. A single‐leg device is fabricated with a high efficiency of 5.4% at ΔT = 164 K further demonstrating the efficacy of the Sb2Si2Te6 compositing strategy and the importance of the precipitate‐matrix interface microstructure in improving the performance of materials for relatively low‐temperature applications.

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Transparent-flexible thermoelectric module from In/Ga co-doped ZnO thin films

Cited by 8 publications

References 82 publications

High Ductility and Excellent Thermoelectric Performance in Te-Stabilized Cubic Ag₂Te_xS_1–x Solid Solutions

High Ductility and Excellent Thermoelectric Performance in Te-Stabilized Cubic Ag₂Te_xS_1–x Solid Solutions

Large Electrical Conductivity and Thermoelectric Power Factor of Pulsed Laser-Deposited Zn_1–xGa_xO Thin Films

Synergistic Combination of Sb₂Si₂Te₆ Additives for Enhanced Average ZT and Single‐Leg Device Efficiency of Bi_0.4Sb_1.6Te₃‐based Composites

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Transparent-flexible thermoelectric module from In/Ga co-doped ZnO thin films

Cited by 8 publications

References 82 publications

High Ductility and Excellent Thermoelectric Performance in Te-Stabilized Cubic Ag2TexS1–x Solid Solutions

High Ductility and Excellent Thermoelectric Performance in Te-Stabilized Cubic Ag2TexS1–x Solid Solutions

Large Electrical Conductivity and Thermoelectric Power Factor of Pulsed Laser-Deposited Zn1–xGaxO Thin Films

Synergistic Combination of Sb2Si2Te6 Additives for Enhanced Average ZT and Single‐Leg Device Efficiency of Bi0.4Sb1.6Te3‐based Composites

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High Ductility and Excellent Thermoelectric Performance in Te-Stabilized Cubic Ag₂Te_xS_1–x Solid Solutions

High Ductility and Excellent Thermoelectric Performance in Te-Stabilized Cubic Ag₂Te_xS_1–x Solid Solutions

Large Electrical Conductivity and Thermoelectric Power Factor of Pulsed Laser-Deposited Zn_1–xGa_xO Thin Films

Synergistic Combination of Sb₂Si₂Te₆ Additives for Enhanced Average ZT and Single‐Leg Device Efficiency of Bi_0.4Sb_1.6Te₃‐based Composites