TRANSPARENT FERROELECTRIC FIELD EFFECT TRANSISTOR WITH A SINGLE-CRYSTAL SnO₂ CHANNEL

Ferroelectric field-effect transistor based on transparent oxides

“…The highest obtained modulation of the channel conductance, demonstrated previously in [5,11] was 94%, as the gate voltage was varied from − 5 V to 2 V. The difference in the channel current at positive and negative remnant polarizations of the undergate ferroelectric was 37%. The hysteresis loop of the dependence of the drain current (I d ) on the gate voltage (V g ) showed a clockwise direction.…”

“…XRD spectrum demonstrates reflections similar to those for polycrystalline films. The more detailed technology description you can find in our previous papers [5,11]. For all electric measurements we used KEITHLEY Picoammeter-6487; SourceMeter-2400 and PCI card (National Instruments-6014).…”

“…Recently, we have shown [5,11] that SnO 2 (100)/c-Al 2 O 3 is a good candidate for production of a high-mobility transparent channel in the FFET structure. In this work we investigate reasons of the clockwise hysteresis loop and small retention time of remnant polarization in the PZT/SnO 2 /Al 2 O 3 FFET structures.…”

“…Several transparent non-volatile memory devices with perfect characteristics were discussed in [4][5][6][7].…”

The Characteristics of Amorphous-Oxide-Semiconductor Thin-Film-Transistors According to the Active-Layer Structure

“…Continuous research on oxide-semiconductor thin-film-transistors (OS-TFTs) has resulted in initial characteristics that are superior to those of a-Si; however, their long-term stability is still a problem to be overcome [9,10]. Recently, oxide semiconductors without indium have attracted attention because indium is becoming more expensive [11,12]. AMOLED prototypes using OS-TFTs have been developed by a few manufacturers.…”