2023
DOI: 10.1063/5.0172601
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Transparent conductive oxides and low-loss nitride-rich silicon waveguides as building blocks for neuromorphic photonics

Jacek Gosciniak,
Jacob B. Khurgin

Abstract: Fully CMOS-compatible photonic memory holding devices hold a potential in the development of ultrafast artificial neural networks. Leveraging the benefits of photonics such as high-bandwidth, low latencies, low-energy interconnect, and high speed, they can overcome the existing limits of electronic processing. To satisfy all these requirements, a photonic platform is proposed that combines low-loss nitride-rich silicon as a guide and low-loss transparent conductive oxides as an active material that can provide… Show more

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Cited by 3 publications
(7 citation statements)
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“…This results in nearly a 10-fold increase in the field strength, which corresponds to a remarkable 100-fold enhancement in energy density. The process of field enhancement in the thin layer of the TCO material arranged in the photonics and plasmonic waveguide structure was in detail described in our previous papers in refs 25,26. It is worth highlighting that the real part of the effective index experiences a marginal change of just 0.2%.…”
Section: Proposed Schottky Photodetector Layout and Fieldmentioning
confidence: 99%
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“…This results in nearly a 10-fold increase in the field strength, which corresponds to a remarkable 100-fold enhancement in energy density. The process of field enhancement in the thin layer of the TCO material arranged in the photonics and plasmonic waveguide structure was in detail described in our previous papers in refs 25,26. It is worth highlighting that the real part of the effective index experiences a marginal change of just 0.2%.…”
Section: Proposed Schottky Photodetector Layout and Fieldmentioning
confidence: 99%
“…In a typical TCO, the situation is different, as shown in Figure (b). The Fermi level is relatively small, about 0.65 eV for the AZO operating near ENZ point with carrier concentration of N c ∼ 7 × 10 26 m –3 . Since ℏω > E F the carriers are excited from the filled states with − E F < E < 0 where the density of states is nonuniform. Therefore, excited states energy distribution ℏω – E F < E < ℏω maintains (until electron–electron (EE) scattering causes redistribution of “hot” carriers) the same parabolic distribution in the band with more carriers having energies above the barrier than in the case of metal with the same value of the energy barrier.…”
Section: Operation Principle Of the Schottky Photodetector In Metals ...mentioning
confidence: 99%
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“…Transparent conductive oxides (TCOs), which belong to the epsilon‐near‐zero (ENZ) materials, seem to be an excellent material for such a task, as they can absorb energy under a wide range of wavelengths. [ 15–20 ] They possess large permittivity tunability under an applied voltage or light illumination, [ 21–26 ] allowing the material properties to be tuned to specific requirements. They also feature low optical loss, fast switching time, and low switching voltage.…”
Section: Introductionmentioning
confidence: 99%
“…of wavelengths. [15][16][17][18][19][20] They possess large permittivity tunability under an applied voltage or light illumination, [21][22][23][24][25][26] allowing the material properties to be tuned to specific requirements. They also feature low optical loss, fast switching time, and low switching voltage.…”
mentioning
confidence: 99%