Transparent Conductive Electrodes of β-Ga₂O₃/Ag/β-Ga₂O₃ Multilayer for Ultraviolet Emitters

Ga2O3/Ag/Ga2O3-Laminated Film Fabricated at Room Temperature: Toward Applications in Ultraviolet Transparent Highly Conductive Electrodes

“…It is noted that the antireflection effect of Ag mirror films will occur to enhance optical transmittance if the Ag thickness increases to a particular value. Our result is somewhat different from that obtained by Kim et al [14], possibly because of the UV-ozone wet pretreatment which made the Ag interlayer not a compact film even at 14 nm. As mentioned in our previous work [20], the change of sheet resistance of the laminated film is mainly determined by the Ag interlayer.…”

“…The transmittance obtained in this work is slightly higher than the previously reported values, and the FOM values are close to those of Ref. [14]. Then, the effect of different annealing temperatures (500 • C, 600 • C, 700 • C, 800 • C) under an Ar atmosphere on the crystallinity of Ga 2 O 3 /Ag/Ga 2 O 3 -laminated films with an Ag interlayer with a thickness of 12 nm was analyzed.…”

“…Woo et al [11] and Kim et al [12] reported Ag/Ga 2 O 3 -and ITO/Ga 2 O 3 -bilayer UV TCO films using magnetron sputtering, where the optical transmittance and sheet resistance of the Ag/Ga 2 O 3 -and ITO/Ga 2 O 3 -bilayer UV TCO films were about 91% (380 nm), 80.94% (380 nm) and <42 Ω/sq, 58.6 Ω/sq, respectively. Zhuang et al [13], Kim et al [14] and Liang et al [15] studied the properties of Ga 2 O 3 /Cu/ITO-, Ga 2 O 3 /Ag/Ga 2 O 3 -and ITO/Ga 2 O 3 /Ag/Ga 2 O 3 -multilayer TCO films, respectively. The optical transmittance and sheet resistance of these UV TCO films are 86% (300~850 nm), 87.16% (300~350 nm), 86.4% (335 nm) and 45 Ω/sq, 8.48 Ω/sq and 3.43 Ω/sq, respectively.…”

β-Ga₂O₃ Used as a Saturable Absorber to Realize Passively Q-Switched Laser Output

“…Ga2O3 is a semiconductor material with ultra wide-band gap (~ 4.8ev), high conductivity [15][16]. Therefore, Ga2O3 is an electronic and optical material with great potential.…”

Rectifying Effect of the Sr3Al2O6/Ga2O3 Heterojunction

“…Various oxides, such as ZnO, MgZnO, SnO 2 and In 2 O 3 :Sn (ITO), are becoming the mainstreams in photodetectors (PDs), transistors, Schottky diodes, solar cells, and resistive random access memories (RRAMs) . In addition, the high‐quality oxide films obtained in the form of oxide/metal/oxide (OMO) sandwich multilayer structures are the excellent candidates working as transparent conducting electrodes (TCEs) in light‐emitting diodes (LEDs) and flat‐panel displays . Recently, as opposed to the aforementioned oxides that had been widely studied, gallium trioxide (Ga 2 O 3 ) attracts much enthusiasm in high‐power, high‐voltage devices and solar‐blind UV PDs due to its high responsivity in deep UV region (maximum responsivity at ≈250 nm), large bandgap (4.5–4.9 eV), and high anti‐breakdown ability (theoretical breakdown field ≈6–8 MV cm −1 ) .…”