Transparent conducting zinc oxide thin film prepared by electron beam evaporation technique with argon plasma assistance

Falcão, V. D.; Sabino, M. E. L.; Miranda, Diego Oliveira; Diniz, Antônia Sônia Alves Cardoso; Branco, José Roberto Tavares

doi:10.1109/pvsc.2008.4922879

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2011

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“…The technology for growing ZnO thin films on a variety of substrates has been improved, and a lot of method has been used, such as chemical spray pyrolysis 10, sputtering 11, metal–organic chemical vapor deposition 12, electron beam evaporation 13, and the sol–gel process 14.…”

Section: Introductionmentioning

confidence: 99%

Comparative study of ZnO thin films prepared by plasma deposition and electron beam evaporation for use in photovoltaic devices

Falcão¹,

Miranda²,

Sabino³

et al. 2011

Progress in Photovoltaics

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Undoped zinc oxide thin films were grown at room temperature using two techniques: plasma deposition (PD) and electron beam evaporation in an argon atmosphere. PD offers some advantages, such as low ion damage and low deposition temperature. The optical transmittance of the films deposited by both methods was higher than 80% in the near UV-VIS range; the energy band gap and index of refraction agree with values reported in the literature. The resistivity of films grown by PD was 3.1 Â 10 À2 V cm, lower than the value of 1.2 Â 10 À1 V cm found for plasma assisted e-beam evaporated films.

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