2014
DOI: 10.1016/j.tsf.2013.05.104
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Transparent conducting oxide films of group V doped titania prepared by aqueous chemical solution deposition

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Cited by 16 publications
(6 citation statements)
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“…Research at that time showed that the method could also be applied for the deposition of metals, metallic alloys, chalcogenides, oxides, carbonates, and halides, all of which are an inherent part of next-generation organic semiconductors [10][11][12]. In more recent years, the process has been extended to deposit electron and hole transport layers (ETL and HTL, respectively), transparent conducting oxides (TCO), nanotubes, copper indium gallium selenide (CIGS) devices, and numerous other applications [13][14][15][16][17]. Further, the CBD method is inexpensive, easy to implement, convenient for large area depositions, and associated with highly favorable optoelectronic and structural properties [18,19].…”
Section: Introductionmentioning
confidence: 99%
“…Research at that time showed that the method could also be applied for the deposition of metals, metallic alloys, chalcogenides, oxides, carbonates, and halides, all of which are an inherent part of next-generation organic semiconductors [10][11][12]. In more recent years, the process has been extended to deposit electron and hole transport layers (ETL and HTL, respectively), transparent conducting oxides (TCO), nanotubes, copper indium gallium selenide (CIGS) devices, and numerous other applications [13][14][15][16][17]. Further, the CBD method is inexpensive, easy to implement, convenient for large area depositions, and associated with highly favorable optoelectronic and structural properties [18,19].…”
Section: Introductionmentioning
confidence: 99%
“…Furthermore, with the purpose to evaluate the reproducibility of our electrodes, eleven different samples were heated using these annealing parameters and all together showed an average sheet resistance of 181 V/&. This value is two magnitudes lower than the best one reported by Elen et al (40 000 V/&, 70 nm) [14] and it is only one magnitude higher than for sputtered TNO [12]. According to Table 1, it can be concluded that the post-annealing parameters play an important role in the conductivity of the TNO.…”
Section: Structural Characterizationmentioning
confidence: 74%
“…Zhao et al [3] reported that the conductivity is improved with the increment of the carrier concentration during the annealing in vacuum. Later, Elen et al [14] demonstrated that hydrogen leads to an increase in concentration of oxygen vacancies and therefore the carrier concentration is improved even further. Herein, it can be seen clearly from Table 1 that the conductivity increases considerably with high annealing temperatures and even more with the annealing time.…”
Section: Structural Characterizationmentioning
confidence: 99%
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