Transparent capacitors based on nanolaminate Al2O3/TiO2/Al2O3 with H2O and O3 as oxidizers

Zhang, G. Z.; Wu, Hao; Chen, C.; Wang, T.; Wang, P. Y.; Ma, L. Q.; Jin, Yong; Liu, C.

doi:10.1063/1.4872470

Cited by 31 publications

(22 citation statements)

References 31 publications

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“…However, the MOS capacitors with H 2 O as the oxidizer showed a higher capacitance than that with O 3 oxidant. The reason was probably due to that the former have more oxygen vacancies and hydroxyl residuals [18]. These defects and impurities, on the one hand, can provide extra inherent electric dipoles which contributed to a part of capacitance.…”

Section: Resultsmentioning

confidence: 99%

“…The leakage current density of the capacitors without annealing was improved from 1 × 10 −8 to 3 × 10 −9 A/cm 2 at 1 V when O 3 was used as the oxidizer instead of H 2 O. This could be explained in this way that O 3 is highly volatile and has a stronger oxidizing ability than H 2 O, based on the fact that the prepared ZrO 2 films using O 3 oxidizer have less impurities [18] and more accurate stoichiometry composition. The improved ZrO 2 qualities enhanced the insulating properties.…”

Section: Resultsmentioning

confidence: 99%

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Effects of Post-Deposition Annealing on ZrO2/n-GaN MOS Capacitors with H2O and O3 as the Oxidizers

et al. 2017

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GaN-based metal-oxide-semiconductor capacitors with ZrO2 as the dielectric layer have been prepared by atomic layer deposition. The accumulation and depletion regions can be clearly distinguished when the voltage was swept from −4 to 4 V. Post-annealing results suggested that the capacitance in accumulation region went up gradually as the annealing temperature increased from 300 to 500 °C. A minimum leakage current density of 3 × 10−9 A/cm2 at 1 V was obtained when O3 was used for the growth of ZrO2. Leakage analysis revealed that Schottky emission and Fowler-Nordheim tunneling were the main leakage mechanisms.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Effects of Post-Deposition Annealing on ZrO2/n-GaN MOS Capacitors with H2O and O3 as the Oxidizers

et al. 2017

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“…ALD method was used as the second step to increase the conductivity. The ALD-AZO films (about 120 nm) were deposited at 150 °C by using Beneq TFS-200, and the details of the ALD process can be found in our previous work [8–10]. The substrates in this experiment were p-GaN (the carrier concentration was about 1.2 × 10 17 cm −3 ) and quartz glass.…”

Section: Methodsmentioning

confidence: 99%

“…However, both tin and indium are costly and unfriendly to the environment. In contrast, AZO is promising due to its high-transparency, low-resistance, low-cost and non-toxicity [8–10]. It has been reported that AZO films can be prepared by many methods such as atomic layer deposition [8], sputtering [11], e-beam evaporation [12], pulsed laser deposition [13] and sol-gel [14].…”

Section: Introductionmentioning

confidence: 99%

Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts

et al. 2017

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Al-doped ZnO (AZO) thin films were deposited directly on p-GaN substrates by using a two-step deposition consisting of polymer assisted deposition (PAD) and atomic layer deposition (ALD) methods. Ohmic contacts of the AZO on p-GaN have been formed. The lowest sheet resistance of the two-step prepared AZO films reached to 145 Ω/sq, and the specific contact resistance reduced to 1.47 × 10−2 Ω·cm2. Transmittance of the AZO films remained above 80% in the visible region. The combination of PAD and ALD technique can be used to prepare p-type ohmic contacts for optoelectronics.

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“…Many high-k materials, including Al 2 O 3 [10], TiO 2 [11], HfO 2 [12], ZrO 2 [13], have been thoroughly investigated in the last few years. Among them, ZrO 2 demonstrated great potential due to its high relative permittivity of about 25, and its relatively large bandgap of about 5.6 eV [14].…”

Section: Introductionmentioning

confidence: 99%

Transparent and Flexible Capacitors with an Ultrathin Structure by Using Graphene as Bottom Electrodes

et al. 2017

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Ultrathin, transparent and flexible capacitors using graphene as the bottom electrodes were directly fabricated on polyethylene naphthalate (PEN) substrates. ZrO2 dielectric films were deposited on the treated surface of graphene by atomic layer deposition (ALD). The deposition process did not introduce any detectible defects in the graphene, as indicated by Raman measurements, guaranteeing the electrical performances of the graphene electrodes. The Aluminum-doped zinc oxide (AZO) films were prepared as the top electrodes using the ALD technique. The capacitors presented a high capacitance density (10.3 fF/μm2 at 10 kHz) and a relatively low leakage current (5.3 × 10−6 A/cm2 at 1 V). Bending tests revealed that the capacitors were able to work normally at an outward bending radius of 10 mm without any deterioration of electrical properties. The capacitors exhibited an average optical transmittance of close to 70% at visible wavelengths. Thus, it opens the door to practical applications in transparent integrated circuits.

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Transparent capacitors based on nanolaminate Al₂O₃/TiO₂/Al₂O₃ with H₂O and O₃ as oxidizers

Cited by 31 publications

References 31 publications

Effects of Post-Deposition Annealing on ZrO2/n-GaN MOS Capacitors with H2O and O3 as the Oxidizers

Effects of Post-Deposition Annealing on ZrO2/n-GaN MOS Capacitors with H2O and O3 as the Oxidizers

Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts

Transparent and Flexible Capacitors with an Ultrathin Structure by Using Graphene as Bottom Electrodes

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