Highlights Photochemical oxidation (UV/ozone treatment) of self-assembled solution-processed graphene films is demonstrated for the first time The effect that photochemical oxidation has on self-assembled graphene films is a reduction of sheet resistance, the opposite of the earlier reported effect on CVD or mechanically exfoliated graphene Edges as the dominant defect type in self-assembled graphene films play a crucial role in the presented defect density decrease Photochemical oxidation is proposed as a method of increasing the carrier mean free path, doping, and lowering sheet resistance of solution-processed graphene films Abstract Liquid phase exfoliation followed by Langmuir-Blodgett self-assembly (LBSA) is a promising method for scalable production of thin graphene films for transparent conductor applications.However, monolayer assembly into thin films often induces a high density of defects, resulting in a large sheet resistance that hinders practical use. We introduce UV/ozone as a novel photochemical treatment that reduces sheet resistance of LBSA graphene threefold, while preserving the high optical transparency. The effect of such treatment on our films is opposite to the effect it has on mechanically exfoliated or CVD films, where UV/ozone creates additional defects in the graphene plane, increasing sheet resistance. Raman scattering shows that exposure to UV/ozone reduces the defect density in LBSA graphene, where edges are the dominant defect type. FTIR spectroscopy indicates binding of oxygen to the graphene lattice during exposure to ozone. In addition, work function measurements reveal that the treatment dopes the LBSA film, making it more conductive. Such defect patching paired with doping leads to an accessible way of improving the transparent conductor performance of LBSA graphene, making solution-processed thin films a candidate for industrial use.