Transparent and conducting intrinsic ZnO thin films prepared at high growth-rate with c-axis orientation and pyramidal surface texture

Mondal, Praloy; Das, Debajyoti

doi:10.1016/j.apsusc.2013.09.099

Cited by 47 publications

(18 citation statements)

References 21 publications

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“…Gradually, the diminishing intensity of most of the TiO 2 -B-related peaks identifies the systematically reducing crystallinity of the TNW network and the consistent peak shifts demonstrate spontaneous lattice distortion occurring in TNW via the inclusion of Cd and S atoms on increasing the CdS attachment to its surface. The grain size estimated using the Debye–Scherer formula − on two neighboring peaks at low 2θ value identifies that (110) nanocrystals of TiO 2 reduced from 35.28 to 11.81, 10.87, and 10.37 nm, for the pristine TNW to TNW/CdS-5, TNW/CdS-10, and TNW/CdS-15 samples, respectively, while that for the (111) nanocrystals of CdS remained almost unchanged at ∼6.5 nm. Accordingly, it is identified that the CdS component was in crystalline Q-dot configuration with increased volume fraction on increased CdS loadings on TNWs.…”

Section: Resultsmentioning

confidence: 99%

CdS Q-Dot-Impregnated TiO₂-B Nanowire-Based Photoanodes for Efficient Photovoltaic Conversion in ‘Q-Dot Co-sensitized DSSC’

Das

Makal

2021

Energy Fuels

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Cadmium sulfide (CdS) as a narrow-band-gap semiconductor has been coupled in 0–15 wt % to hydrothermally grown titanium dioxide bronze-phase (TiO2-B) nanowires (TNWs), reducing the optical band gap from 2.96 to 2.71 eV. In CdS Q-dot-impregnated TNW/CdS composite nanowires, absorption of light extends toward the visible range of the solar spectrum and effective light-harvesting improves via increased specific surface area; furthermore, the properly aligned band edges between CdS and TiO2-B ascertain efficient separation of the photogenerated charge carriers. Overall, an optimum photoanode material characteristic has been demonstrated in TNW/CdS-10 nanocomposite that achieves a typical photovoltaic (PV) conversion efficiency, η ∼ 1.63%, in Q-dot-sensitized solar cells (QDSSCs), compared to the η ∼ 0.86% of the simple electrochemical cell with a pristine TNW photoanode. N3 dye sensitization of the pristine TNW photoanode leads to a conversion efficiency of η ∼ 3.88% in dye-sensitized solar cells (DSSCs). When the CdS Q-dot-sensitized TNW/CdS-10 photoanode is further co-sensitized by the N3 dye, an enhanced PV conversion efficiency of η ∼ 8.04% is attained in the “Q-dot co-sensitized DSSC” device by virtue of the optimum light absorption facilitated by the maximum dye-loading capacity retained by the widest available surface area on the composite photoanode, contributing to a superior incident-photon-to-current conversion efficiency (IPCE) of ∼ 69.60% at 520 nm. Interfacial electron injection and the recombination dynamics of the cells studied using impedance spectroscopy demonstrate that the DSSC performance increases due to minimization of the electron–hole recombination rate and the increase of the conduction of charge carriers via reduced charge-transfer resistance of the photoanode(Q-dots/dye)/electrolyte interface at an optimum 10 wt % CdS loading. Sequential sensitization of TiO2-B nanowire photoanodes via CdS Q-dot impregnation and further by N3 dye molecule adsorption improves light-harvesting, facilitates efficient photocarrier generation, and prevents interfacial charge recombination, and their cumulative electron injection results in a better photovoltaic performance via novel “CdS Q-dots and N3 dye co-sensitization of TiO2-B NWs” in Q-dot co-sensitized DSSCs.

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Section: Resultsmentioning

confidence: 99%

CdS Q-Dot-Impregnated TiO₂-B Nanowire-Based Photoanodes for Efficient Photovoltaic Conversion in ‘Q-Dot Co-sensitized DSSC’

Das

Makal

2021

Energy Fuels

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“…The experimental details are given elsewhere. 19 The samples were characterized by X-ray diffraction analysis carried out using a conventional Cu-K a X-ray radiation (l $ 1.5418 Å) source and Bragg diffraction setup (Seifert 3000P). Raman spectra of the samples were taken from a Renishaw inVia Raman Microscope with an excitation wavelength of 514 nm from an air-cooled Ar + laser source, at a power density of $2 mW cm À2 .…”

Section: Methodsmentioning

confidence: 99%

Photoluminescence phenomena prevailing in c-axis oriented intrinsic ZnO thin films prepared by RF magnetron sputtering

2014

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“…In the case of TZO and HZO, stronger MO II peaks are observed. Extrinsic Ti 4+ and Hf 4+ ions from the precursors tend to attract oxygen from the ZnO matrix during the free competitive growth of TiO/HfO and ZnO, and simultaneously form oxygen vacancies during the process [19,40]. After the thermal cycle, significant changes in the MO II peaks can be observed.…”

Section: Effect Of Doping Element On the Thermoelectric Performancementioning

confidence: 99%

Enhanced Thermoelectric Transport and Stability in Atomic Layer Deposited-HfO₂/ZnO and TiO₂/ZnO-Sandwiched Multilayer Thin Films

Felizco

Juntunen

Uenuma

et al. 2020

ACS Appl. Mater. Interfaces

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Herein, enhancements in thermoelectric performance, both power factor and thermal stability, are exhibited by sandwiching HfO 2 and TiO 2 layers onto atomic layer deposited ZnO thin films. High temperature thermoelectric measurements from 300 to 450 K revealed an almost two-fold improvement in electrical conductivity for TiO 2 /ZnO (TZO) samples, primarily owing to increase in carrier concentration by Ti doping. On the other hand, HfO 2 /ZnO (HZO) achieved the highest power factor values owing to maintaining Seebeck coefficients comparable to pure ZnO. HZO also exhibited excellent stability after multiple thermal cycles, which has not been previously observed for pure or doped ZnO thin films. Such improvement in both thermoelectric properties and thermal stability of HZO can be attributed to a shift in crystalline orientation from a-axis to c-axis, as well as the high bond dissociation energy of HfO, stabilizing the ZnO structure. These unique properties exhibited by ALD HZO and TZO thin films pave the way for next generation transparent thermoelectric devices.

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Transparent and conducting intrinsic ZnO thin films prepared at high growth-rate with c-axis orientation and pyramidal surface texture

Cited by 47 publications

References 21 publications

CdS Q-Dot-Impregnated TiO₂-B Nanowire-Based Photoanodes for Efficient Photovoltaic Conversion in ‘Q-Dot Co-sensitized DSSC’

CdS Q-Dot-Impregnated TiO₂-B Nanowire-Based Photoanodes for Efficient Photovoltaic Conversion in ‘Q-Dot Co-sensitized DSSC’

Photoluminescence phenomena prevailing in c-axis oriented intrinsic ZnO thin films prepared by RF magnetron sputtering

Enhanced Thermoelectric Transport and Stability in Atomic Layer Deposited-HfO₂/ZnO and TiO₂/ZnO-Sandwiched Multilayer Thin Films

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Transparent and conducting intrinsic ZnO thin films prepared at high growth-rate with c-axis orientation and pyramidal surface texture

Cited by 47 publications

References 21 publications

CdS Q-Dot-Impregnated TiO2-B Nanowire-Based Photoanodes for Efficient Photovoltaic Conversion in ‘Q-Dot Co-sensitized DSSC’

CdS Q-Dot-Impregnated TiO2-B Nanowire-Based Photoanodes for Efficient Photovoltaic Conversion in ‘Q-Dot Co-sensitized DSSC’

Photoluminescence phenomena prevailing in c-axis oriented intrinsic ZnO thin films prepared by RF magnetron sputtering

Enhanced Thermoelectric Transport and Stability in Atomic Layer Deposited-HfO2/ZnO and TiO2/ZnO-Sandwiched Multilayer Thin Films

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CdS Q-Dot-Impregnated TiO₂-B Nanowire-Based Photoanodes for Efficient Photovoltaic Conversion in ‘Q-Dot Co-sensitized DSSC’

CdS Q-Dot-Impregnated TiO₂-B Nanowire-Based Photoanodes for Efficient Photovoltaic Conversion in ‘Q-Dot Co-sensitized DSSC’

Enhanced Thermoelectric Transport and Stability in Atomic Layer Deposited-HfO₂/ZnO and TiO₂/ZnO-Sandwiched Multilayer Thin Films