Transmissivity to reflectivity change delay phenomenon observed in GeTe thin films at laser-induced reamorphization

Atypical phase-change alloy Ga2Te3: atomic structure, incipient nanotectonic nuclei, and multilevel writing

“…Further details of the pump-probe setup and time-resolved measurements were published previously. [19][20][21] A limited number of experiments were conducted using a femtosecond laser Astrella Coherent (𝜆 pump = 800 nm, the energy density 20 mJ cm -2 ) and a 15 mW probing laser (𝜆 probe = 1550 nm).…”

Microstructural Analysis and Optical Property Control of GeTe Chalcogenide-Zirconia Nanoparticle Nanocomposite Films for Device Application

“…55 The other is the phase transition of GeTe from a more transparent amorphous state to a less transparent crystalline state with an increase in temperature. 56 Studies have reported that the bandgap reduction, frequently observed at high temperatures in semiconductor materials, 57,58 including silicon and germanium, decreases their transmittance owing to the increase in photon absorption. The energy bandgaps of the GeTe layers were determined from transmittance measurements.…”

“…One is the bandgap reduction of GeTe induced by the structural relaxation with the increasing temperature . The other is the phase transition of GeTe from a more transparent amorphous state to a less transparent crystalline state with an increase in temperature . Studies have reported that the bandgap reduction, frequently observed at high temperatures in semiconductor materials, , including silicon and germanium, decreases their transmittance owing to the increase in photon absorption.…”