Transmission line capacitance measurement

Williams, Dylan F.; Marks, Roger B.

doi:10.1109/75.84601

Cited by 192 publications

(70 citation statements)

References 6 publications

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“…We determined the characteristic impedance of the CPW lines from the capacitance per unit length of the lines, which was assumed constant, as explained in [2] and [3], and set the measurement reference plane at the leading edge of the rectangular resistors and the reference impedance of the calibration to 50 0.…”

Section: Resistor Impedancementioning

confidence: 99%

Planar Resistors for Probe Station Calibration

Walker

Williams

Morgan

1992

40th ARFTG Conference Digest

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This paper investigates the effects of variations in sheet resistance, geometry, distance from the probe tip, and fabrication processes on the impedance of planar nickel-chromium resistors. Resistor reactance is a strong function of film resistance, but depends only weakly on geometry and distance from the probe tip. Photoresist contamination in the resistive film induces more complicated impedance behavior, even at low frequencies. The impact on circuit design and time-and frequency-domain calibrations is considered in light of these results.

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Section: Resistor Impedancementioning

confidence: 99%

Planar Resistors for Probe Station Calibration

Walker

Williams

Morgan

1992

40th ARFTG Conference Digest

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“…The line capacitance per unit length was extracted applying the lumped resistor method [6,10] (Table 2) and the line characteristic impedance was measured for all four boundaries (Fig. 1).…”

Section: B Cpw Line Characterizationmentioning

confidence: 99%

The influence of calibration substrate boundary conditions on CPW characteristics and calibration accuracy at mm-wave frequencies

Rumiantsev

Doerner

Godshalk

2008

2008 72nd ARFTG Microwave Measurement Symposium

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“…The value of the characteristic impedance for a given microstrip line can be obtained through different means but generally it is not a value that is extracted from the delay standards used during the calibration procedure [3], [4].…”

Section: Calibration Of the Test Fixturementioning

confidence: 99%

A Wideband Method for the Rigorous Low-Impedance Loadpull Measurement of High-Power Transistors Suitable for Large-Signal Model Validation

Aaen

Plá

Bridges

et al. 2000

56th ARFTG Conference Digest

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This paper presents a rigorous method for low impedance loadpull measurements using a 6-section Tschebyscheff transforming water-cooled pre-matching test fixture. The transformers were designed to be able to accurately determine S-parameters that represent each fixture half at the fundamental frequency of operation f o and its second and third harmonics, 2f o and 3f o . A twotier non-50 Ω TRL calibration technique was used to establish the measurement reference planes. In order to accurately establish the calibrated system impedance, a simulated Time Domain Reflectometry (TDR) technique was employed. The calibration of the loadpull system was confirmed by calculating the difference between the measured and calculated transducer gain (∆Gt). This difference provides a measure of the measurement uncertainty. The largest uncertainty, in areas of interest on the Smith chart, was found to be 0.25 dB. The fixture was successfully utilized to measure the loadpull performance of one of Motorola's LDMOS, 90 Watt, 1.9 GHz high power transistors.

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Transmission line capacitance measurement

Cited by 192 publications

References 6 publications

Planar Resistors for Probe Station Calibration

Planar Resistors for Probe Station Calibration

The influence of calibration substrate boundary conditions on CPW characteristics and calibration accuracy at mm-wave frequencies

A Wideband Method for the Rigorous Low-Impedance Loadpull Measurement of High-Power Transistors Suitable for Large-Signal Model Validation

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