Transmission electron microscopy investigations of epitaxial graphene on C-terminated 4H–SiC

Borysiuk, J.; Bożek, R.; Grodecki, K.; Wysmołek, A.; Strupiński, W.; Stępniewski, R.; Baranowski, J. M.

doi:10.1063/1.3445776

Cited by 37 publications

(32 citation statements)

References 41 publications

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“…Graphene synthesized at this SiC surface seems to be relatively weakly attached to the underlying surface. No buffer layer (covalently bound carbon layer on the SiC surface) was detected and the first graphene layer is located at a distance of about 3.2 Å from the SiC surface, which is too far to form covalent bonding between carbon atoms [133]. Low-energy electron diffraction [134] and scanning tunneling microscopy [54] results indicate a significant degree of rotational disorder in the graphene films.…”

Section: Growth Of Graphene On C Facementioning

confidence: 97%

Epitaxial Graphene on SiC: A Review of Growth and Characterization

2016

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This review is devoted to one of the most promising two-dimensional (2D) materials, graphene. Graphene can be prepared by different methods and the one discussed here is fabricated by the thermal decomposition of SiC. The aim of the paper is to overview the fabrication aspects, growth mechanisms, and structural and electronic properties of graphene on SiC and the means of their assessment. Starting from historical aspects, it is shown that the most optimal conditions resulting in a large area of one ML graphene comprise high temperature and argon ambience, which allow better controllability and reproducibility of the graphene quality. Elemental intercalation as a means to overcome the problem of substrate influence on graphene carrier mobility has been described. The most common characterization techniques used are low-energy electron microscopy (LEEM), angle-resolved photoelectron spectroscopy (ARPES), Raman spectroscopy, atomic force microscopy (AFM) in different modes, Hall measurements, etc. The main results point to the applicability of graphene on SiC in quantum metrology, and the understanding of new physics and growth phenomena of 2D materials and devices.

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Section: Growth Of Graphene On C Facementioning

confidence: 97%

Epitaxial Graphene on SiC: A Review of Growth and Characterization

2016

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“…Ultimately these structures will create a network of defects such as wrinkles and delaminations. A different microstructure of the graphene layer synthesized on a C-terminated SiC surface was evidenced in a number of features, such as a possibility of a growth of a large number of layers, the absence of a buffer layer, a relatively large distance between the SiC topmost layer and the first carbon layer, 20 resulting in a very weak van der Waals coupling to the substrate 44 and a possible rotation of the carbon layers. 45 From the above results, it can be seen that this structure influences not only the structure but also the formation of the carbon layer, affecting the possible growth mechanism.…”

Section: B Structure Of Graphene Layers Grown Over Vicinal 4h-sic Sumentioning

confidence: 99%

“…too far to form covalent bonding between carbon atoms. 20 Low energy electron diffraction (LEED) [21][22][23] and scanning tunneling microscopy (STM) [24][25][26] results indicate that a significant degree of rotational disorder in the graphene films. Rotational stacking faults in the graphene layers, which give rise to a moiré pattern, were also observed in TEM.…”

Section: Introductionmentioning

confidence: 99%

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Role of structure of C-terminated4H-SiC(0001¯) surface in growth of graphene layers: Transmission electron microscopy and density functional theory studies

et al. 2012

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Principal structural defects in graphene layers, synthesized on a carbon-terminated face, i.e. the SiC(0001 ) face of a 4H-SiC substrate, are investigated using microscopic methods.Results of high-resolution transmission electron microscopy (HRTEM) reveal their atomic arrangement. Mechanism of such defects creation, directly related to the underlying crystallographic structure of the SiC substrate, is elucidated. The connection between the 4H-SiC(0001 ) surface morphology, including the presence of the single atomic steps, the sequences of atomic steps, and also the macrosteps, and the corresponding emergence of planar defective structure (discontinuities of carbon layers and wrinkles) is revealed. It is shown that disappearance of the multistep island leads to the creation of wrinkles in the graphene layers. The density functional theory (DFT) calculation results show that the diffusion of both silicon and carbon atoms is possible on a Si-terminated SiC surface at a high temperature close to 1600°C. The creation of buffer layer at the Si-terminated surface effectively blocks horizontal diffusion, preventing growth of thick graphene layer at this face.At the carbon terminated SiC surface, the buffer layer is absent leaving space for effective horizontal diffusion of both silicon and carbon atoms. DFT results show that excess carbon atoms converts a topmost carbon layer to sp 2 bonded configuration, liberating Si atoms in a) Electronic mail: jolanta.borysiuk@fuw.edu.pl 2 barrierless process. The silicon atoms escape through the channels created at the bending layers defects, while the carbon atoms are incorporated into the growing graphene layers.These results explain growth of thick graphene underneath existing graphene cover and also the creation of the principal defects at the C-terminated SiC(0001) surface.

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“…Their characteristic feature was high density of wrinkles, Fig. 1, similar to those found on graphene multilayers [6]. Those wrinkles had mainly a random orientation.…”

Section: Afm Studiesmentioning

confidence: 50%

Light Induced Modification of Graphene Oxide Layers on GaN Basis

et al. 2016

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Graphene oxide suspension in various solvents was spin coated on metal organic vapor phase epitaxy grown GaN/saphire layers. Samples were characterised using the Raman spectroscopy and atomic force microscopy, before and after high temperature treatment. We found that graphene oxide was modifed by high temperature treatment, however a considerable modification was also observed as a result of impinged laser light incident due to the measurements. The Raman spectra were decomposed into two contributions showing different behaviour during the Raman scattering measurements.

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Transmission electron microscopy investigations of epitaxial graphene on C-terminated 4H–SiC

Cited by 37 publications

References 41 publications

Epitaxial Graphene on SiC: A Review of Growth and Characterization

Epitaxial Graphene on SiC: A Review of Growth and Characterization

Role of structure of C-terminated4H-SiC(0001¯) surface in growth of graphene layers: Transmission electron microscopy and density functional theory studies

Light Induced Modification of Graphene Oxide Layers on GaN Basis

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