Transmission electron microscopy characterization of low temperature boron doped silicon epitaxial films

Abstract

<p>Transmission Electron Microscopy (TEM) techniques can provide a complementary understanding on the physico-chemical mechanisms of the growth and the annealing behavior of boron-doped hydrogenated silicon epitaxial films grown at low...</p>

Impact of PECVD-prepared interfacial Si and SiGe layers on epitaxial Si films grown by PECVD (200 °C) and APCVD (1130 °C)

“…The stacking faults in epi-APCVD Si layer with bilayer interface (sample D) are analyzed with the help of TEM characterization. Faults usually start at the interface [36][37][38]; however, for the present TEM samples, the faults start inside the epitaxial Si.…”

Dynamics of Plasma‐Assisted Epitaxial Silicon Growth Driven by a Hydrogen‐Incorporated Nanostructure for Novel Applications

“…[2,3,15] In the last decade, studies on plasma-epi Si have primarily focused on two aspects: improving the charge-carrier transport properties for electronic applications and suppressing the growth of plasma-epi Si for high-efficiency SHJ solar cells. [2,3,[6][7][8][9][10][11][12][13][14][15][16] Plasma-assisted epitaxially grown silicon (plasma-epi Si) is a new silicon-based material with a tailorable nanostructure. Nanovoids can be introduced into plasma-epi Si during growth, enabling the bottom-up fabrication of porous Si for applications such as batteries, hydrogen storage, and even explosives.…”

“…Plasma-enhanced chemical vapor deposition (PECVD) is a widely used thin-film deposition techniques for fabricating amorphous silicon (a-Si:H), [2,3] polycrystalline silicon, [4] nanocrystalline silicon, [5] as well as epitaxial silicon at low temperatures. [6][7][8][9][10][11][12][13][14][15] Single-crystal silicon (c-Si) is grown by the Czochralski method at approximately 1500 °C, whereas PECVD enables the growth of c-Si by plasma-assisted epitaxy (plasma-epi Si) at 200 °C. [1,[6][7][8][9][10][11] Despite various advantages, such as a good thermal budget and low cost, plasma-epi Si has not garnered significant attention from the scientific community owing to its poor electrical properties.…”

“…[ 2,3,15 ] In the last decade, studies on plasma‐epi Si have primarily focused on two aspects: improving the charge‐carrier transport properties for electronic applications and suppressing the growth of plasma‐epi Si for high‐efficiency SHJ solar cells. [ 2,3,6–16 ]…”

Comparative Study on the Quality of Microcrystalline and Epitaxial Silicon Films Produced by PECVD Using Identical SiF4 Based Process Conditions

“…On the other hand, epitaxial Silicon (epi-Si) films are receiving increased attention for the fabrication of novel devices, where c-Si films can be grown or etched in a selective way to produce 3D structures on the surface of the c-Si wafer, in addition to the production of ultrathin c-Si films [16][17][18] on foreign substrates [19], and epi-Si on metallic surfaces [20,21], crystalline semiconductors surfaces such as (100) c-Si [22] and gallium arsenide (c-GaAs) [23]. Moreover, the crystallization process using PECVD, which has been discussed in terms of the impact of silicon clusters [24] opens the possibility to produce novel devices at low substrate temperatures.…”