Transition Metal-Hyperdoped InP Semiconductors as Efficient Solar Absorber Materials

Abstract

This work explores the possibility of increasing the photovoltaic efficiency of InP semiconductors through a hyperdoping process with transition metals (TM = Ti, V, Cr, Mn). To this end, we investigated the crystal structure, electronic band and optical absorption features of TM-hyperdoped InP (TM@InP), with the formula TMxIn1-xP (x = 0.03), by using accurate ab initio electronic structure calculations. The analysis of the electronic structure shows that TM 3d-orbitals induce new states in the host semiconductor bandgap, leading to improved absorption features that cover the whole range of the sunlight spectrum. The best results are obtained for Cr@InP, which is an excellent candidate as an in-gap band (IGB) absorber material. As a result, the sunlight absorption of the material is considerably improved through new sub-bandgap transitions across the IGB. Our results provide a systematic and overall perspective about the effects of transition metal hyperdoping into the exploitation of new semiconductors as potential key materials for photovoltaic applications.

Análisis bibliométrico de las tecnologías de energía solar

“…El mapeo de los autores realizado con VOSviewer (Figura 6) muestra grupos distintivos que congregan a los autores dentro del mismo tema. La figura 6b, muestra que los autores de la Universidad Politécnica de Madrid junto con Aguilera Irene (originalmente también de esta institución) son los que iniciaron a publicar sobre la energía solar, mientras que los autores que están asociados a otras instituciones son aquellos que comenzaron a publicar sobre el tema más tarde (Zarzavilla et al, 2022), (García et al, 2020), (Chen Austin et al, 2020 y (Mora et al, 2019), La figura 7, muestra el mapeo por VOSviewer de los documentos encontrados mediante la consulta en la base de datos Scopus. Las palabras clave se congregan en cuatro grupos principales.…”