Transition Metal Free Monoclinic Eu₈In_17.33S₃₄ and Its Anisotropic Photoelectronic Responses

Abstract

Novel Eu8In17.33S34 (1) is obtained by a solid state reaction and its structure features three parallel slabs of [In9.33S18]∞, [Eu8]∞, and [In8S16]∞, together with defects in specific lattice sites. It is the first monoclinic ternary M 8‑m In18‑n Q 34 (M = Pb, Sn, Eu; Q = S, Se) phase member, and the modulation from the ultralong In–S bond and lattice site with strong antibonding effect results in the unique structure feature. Its single crystals show anisotropic conductivity and photoconductivity.

Pb2BiS2I3 Nanowires for Use in Photodetectors

“…Multicomponent chalcogenide halide compounds may be suitable as novel photoelectric materials that provide good efficiency and stability. − Unique structures could be formed because atoms compete to form stable sites in the crystal owing to the different t bonding preferences of the halide atoms and chalcogenide . Seok et al fabricated solar cells based on SbSI; these cells showed a 3.05% power conversion efficiency (PCE) under standard 100 mW/cm 2 irradiation conditions .…”

Eu2P2S6: The First Rare‐Earth Chalcogenophosphate Exhibiting Large Second‐Harmonic Generation Response and High Laser‐Induced Damage Threshold

“…This phenomenon affords a structural bridge between RE‐ and AE‐based chalcogenides, and the Eu‐based chalcogenides serve as the extension of AE‐based ones. There are lots of works addressing substitution of AE 2+ with Eu 2+ ions to obtain RE‐chalcogenide analogues, which resulted in the discovery of Eu 2 B 5 O 9 S, [29] EuZrS 3 , [30] and Eu 8 In 17.33 S 34 [31] . To date, only seven Eu‐based chalcogenides Eu 2 Ga 2 GeS 7 , [28] EuHgGeQ 4 (Q=S, Se), [32, 33] EuHgSnS 4 , [33] EuCdGeQ 4 (Q=S, Se) [34] and Eu 8 Sn 4 Se 20 [35] have been explored as NLO materials, which is relatively rare when compared with the AE‐based ones.…”

“…There are lots of works addressing substitution of AE 2 + with Eu 2 + ions to obtain RE-chalcogenide analogues, which resulted in the discovery of Eu 2 B 5 O 9 S, [29] EuZrS 3 , [30] and Eu 8 In 17.33 S 34 . [31] To date, only seven Eu-based chalcogenides Eu 2 Ga 2 GeS 7 , [28] EuHgGeQ 4 (Q = S, Se), [32,33] EuHgSnS 4 , [33] EuCdGeQ 4 (Q = S, Se) [34] and Eu 8 Sn 4 Se 20 [35] have been explored as NLO materials, which is relatively rare when compared with the AE-based ones. Therefore, exploring Eu-based chalcogenides for NLO applications still has great potential, which not only shows the fascinating structural chemistry, but also enriches the developing MIR NLO material system.…”

Ba3HgGa2S7: A Zero-Dimensional Quaternary Sulfide Featuring a Unique [Hg2Ga4S14]12– String and Exhibiting a High Photocurrent Response

“…Materials in the IR region with large birefringence and wide band gaps are rare but in urgent need for various IR optical devices . The calculated Δ n of BHGS is 0.093 at 1064 nm and 0.090 at 2100 nm (Figure b), which indicates that BHGS can be a good candidate with large birefringence compared with those containing similar chemical compositions, such as Ba 6 Zn 7 Ga 2 S 16 (Δ n = 0.036) and Sr 5 ZnGa 6 S 15 (Δ n = 0.047) .…”

“…When light was kept on, the photocurrent of BHGS reached to ∼12.2 μA/cm 2 (Figure 3). Notably, this value is much larger than those of most known chalcogenides, such as Rb 2 CuSb 7 S 12 (10 μA/cm 2 ), 41 Rb 2 Ba 3 Cu 2 Sb 2 S 10 (6 nA/cm 2 ), 42 Eu 8 In 17.33 S 34 (∼1.0 μA/ cm 2 ), 43 and Gd 4 S 4 Te 3 (∼2.3 μA/cm 2 ). 44 In general, polar structures with built-in electric fields are in favor of increasing the separation of carriers and suppressing carrier recombination.…”