Transition from wire formation to island formation in thermal agglomeration of a (111) silicon-on-insulator layer

Burhanudin, Zainal Arif; Nuryadi, Ratno; Ishikawa, Yasuhiko; Tabe, Michiharu

doi:10.1016/j.tsf.2005.07.326

Cited by 15 publications

(21 citation statements)

References 14 publications

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“…The latter is a candidate for the initiation of fingers observed in SOI (Si=SiO 2 ) systems [2]. But no instability was observed in our simulations, in agreement with experiments with SOI systems [4], where no trace of the instability was found for h < 4 nm. These results show that the instabilities do not have enough time to develop before holes meet in very thin films.…”

supporting

confidence: 88%

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Dewetting of Ultrathin Solid Films

2009

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Ultrathin crytalline solid films are found to dewet with a faceted rim. In the case of heterogeneous dewetting initiated from a linear trench or from periodically arranged holes, the dewetted area expands either with a faceted multilayer rim or in a layer-by-layer fashion. In the case of homogeneous dewetting, holes are accompanied with multilayer rims and the uncoverage increases as a power law of time. Results of kinetic Monte Carlo simulations are elucidated within the frame of nucleation theory and surface diffusion limited dynamics.

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supporting

confidence: 88%

“…Such a ''dewetting'' process was observed in many experimental systems [1][2][3][4][5][6]. Up to now, the theoretical analysis of solid-film dewetting has been based on the Mullins continuum model for surface diffusion [7].…”

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confidence: 99%

Dewetting of Ultrathin Solid Films

2009

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“…Comparing the results in Fig. 1 and the previous results on (100) 2-6,10) and (111) SOI samples, 8,9) it was also obtained that the resultant agglomerated Si shape and direction are different for each crystal orientation SOI sample.…”

Section: Resultssupporting

confidence: 68%

“…However, it has been reported that such ultrathin Si layers on SiO 2 are thermally unstable, agglomerating into Si islands or wires upon high-temperature annealing either in ultrahigh vacuum (UHV) [1][2][3][4][5][6][7][8][9][10][11] or in a hydrogenated atmosphere. 12) Such SOI agglomeration leads to a critical process limitation for the fabrication of ultrathin SOI-based Si devices.…”

Section: Introductionmentioning

confidence: 99%

Thermal Agglomeration of Ultrathin Silicon-on-Insulator Layers: Crystalline Orientation Dependence

Fan

Nuryadi

Burhanudin

et al. 2008

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The thermal agglomeration of ultrathin silicon-on-insulator (SOI) layers with different crystalline orientations [(110)-, (100)-, and (111)-oriented SOI layers] is reported. (110) SOI agglomeration leads to the formation of Si island arrays along h221i and h332i directions, while (100) and (111) SOI agglomerations result in Si island arrays in h310i directions and Si wires in h121i directions, respectively. The {311} facets mainly determine the direction of the agglomerated shape, whereas the symmetric and asymmetric facet properties are responsible for Si island and wires formation, respectively. These results indicate that Si islands or wires can be formed in certain directions by selecting the appropriate SOI crystalline orientation.

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“…[10][11][12][13][14][15] For instance, Kinetic Monte Carlo simulations have shown that a 1 ML-thick film dewets by forming a dendritic pattern of bilayer islands. 11,12 In the literature, the specific behavior of the thinner films has been attributed to barrierless void nucleation, 16 spinodal dewetting (enhanced sensitivity to thickness or thermal fluctuations), 17 short range effect of the wetting potential, 18,19 or local stresses.…”

mentioning

confidence: 99%