Transition from Anomalous Hall Effect to Topological Hall Effect in Hexagonal Non-Collinear Magnet Mn3Ga

Liu, Z. H.; Zhang, Yajiu; Liu, G. D.; Ding, Bei; Liu, E. K.; Jafri, Hasnain Mehdi; Hou, Zhipeng; Wang, W. H.; Q., X.; Wu, Guangheng

doi:10.1038/s41598-017-00621-x

Cited by 79 publications

(40 citation statements)

References 23 publications

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“…This behavior suggests a negligible effect of inelastic scattering on the anomalous transverse transport of Mn 3 Sn, excluding phonon contributions or skew scattering by magnetic excitations as a possible cause of the room-temperature AHE and ATHE 68 , 70 . The validity of the WF law over a wide temperature range in Mn 3 Sn further supports the intrinsic Berry-curvature mechanism for its large anomalous transverse effects 4 , 9 , 26 , 56 , 63 , 66 , 71 .…”

Section: Observation Of Anomalous Transport In Mn 3 supporting

confidence: 55%

“…For T < 20 K, the Hall measurements in polycrystalline Mn 3 Sn samples reveal sharp peaks of ρ xy ( B ) at about ±0.8 T, suggesting a topological Hall contribution that dominates the Hall signal in the low- T regime 55 . The spontaneous magnetization at T < 20 K increases by over an order of magnitude relative to the high-temperature value; the coercivity also rises dramatically from only a few hundred oersteds at high temperatures to about 1 T at 2 K. Similar low- T behavior in both ρ xy and M is observed in polycrystals of a sister material Mn 3 Ga 56 . The topological Hall effect arises from scalar chirality subtended by three neighboring spins of a noncoplanar spin texture 26 , 53 , 54 , 57 – 59 .…”

Section: Observation Of Anomalous Transport In Mn 3 mentioning

confidence: 55%

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Anomalous transport due to Weyl fermions in the chiral antiferromagnets Mn3X, X = Sn, Ge

et al. 2021

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The recent discoveries of strikingly large zero-field Hall and Nernst effects in antiferromagnets Mn3X (X = Sn, Ge) have brought the study of magnetic topological states to the forefront of condensed matter research and technological innovation. These effects are considered fingerprints of Weyl nodes residing near the Fermi energy, promoting Mn3X (X = Sn, Ge) as a fascinating platform to explore the elusive magnetic Weyl fermions. In this review, we provide recent updates on the insights drawn from experimental and theoretical studies of Mn3X (X = Sn, Ge) by combining previous reports with our new, comprehensive set of transport measurements of high-quality Mn3Sn and Mn3Ge single crystals. In particular, we report magnetotransport signatures specific to chiral anomalies in Mn3Ge and planar Hall effect in Mn3Sn, which have not yet been found in earlier studies. The results summarized here indicate the essential role of magnetic Weyl fermions in producing the large transverse responses in the absence of magnetization.

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Section: Observation Of Anomalous Transport In Mn 3 supporting

confidence: 55%

Section: Observation Of Anomalous Transport In Mn 3 mentioning

confidence: 55%

Anomalous transport due to Weyl fermions in the chiral antiferromagnets Mn3X, X = Sn, Ge

et al. 2021

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“…In particular, Mn 3 Ge and Mn 3 Sn were proposed to be antiferromagnetic Weyl semimetals [4,7,[10][11][12]. A variety of intriguing phenomena were observed, such as large anomalous Hall effect [5,6,9,[13][14][15][16], spin Hall effect [8,17,18], anomalous Nernst effect [19][20][21][22], and magneto-optical Kerr effect [23]. Imaging and writing magnetic domains via the anomalous Nernst effect has also been realized [24].…”

Section: Introductionmentioning

confidence: 99%

Probing magnetic anisotropy in Kagome antiferromagnetic Mn$_3$Ge with torque magnetometry

Liu¹,

Xiao²,

Yu.³

et al. 2021

Preprint

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We investigate the magnetic symmetry of the topological antiferromagnetic material Mn3Ge by using torque measurements. Below the Néel temperature, detailed angle-dependent torque measurements were performed on Mn3Ge single crystals in directions parallel and perpendicular to the Kagome basal plane. The out-of plane torque data exhibit ± sin θ and sin 2θ behaviors, of which the former results from the spontaneous ferromagnetism within the basal plane and the latter from the in-and out-of-plane susceptibility anisotropy. The reversible component of the in-plane torque exhibits sin 6ϕ behavior, revealing the six-fold symmetry of the in-plane magnetic free energy. Moreover, we find that the free energy minima are pinned to the direction of spontaneous ferromagnetism, which correspond to the maxima of the irreversible component of the in-plane torque. We provide an effective spin model to describe the in-plane magnetic anisotropy. Our results demonstrate that the ground state of Mn3Ge is described by the coexistence of a strong six-fold antichiral order and a weak ferromagnetic order induced by second-order spin anisotropy.

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“…12−16 The hexagonal D 0 19 phase in equilibrium is antiferromagnetic with noncollinear triangular magnetic structure, demonstrating remarkable exchange bias effect due to frustrated magnetic structure. 12,13,17 The metastable cubic L 2 1 phase is discussed as an antiferromagnetic half-metal, 3 which is experimentally observed with zero net magnetization. 14,18 When the cubic structure is distorted along the c direction, one obtains the tetragonal D 0 22 phase, which is ferrimagnetic with two inequivalent positions and magnetic moments of Mn atoms.…”

Section: Introductionmentioning

confidence: 99%

Highly Reduced Saturation Magnetization in Epitaxially Grown Ferrimagnetic Heusler Thin Films

et al. 2019

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The key of spintronic devices using the spin-transfer torque phenomenon is the effective reduction of switching current density by lowering the damping constant and the saturation magnetization while retaining strong perpendicular magnetic anisotropy. To reduce the saturation magnetization, particular conditions such as specific substitutions or buffer layers are required. Herein, we demonstrate highly reduced saturation magnetization in tetragonal D022 Mn3–xGa thin films prepared by rf magnetron sputtering, where the epitaxial growth is examined on various substrates without any buffer layer. As the lattice mismatch between the sample and the substrate decreases from LaAlO3 and (LaAlO3)0.3(Sr2AlTaO6)0.7 to SrTiO3, the quality of Mn3–xGa films is improved together with the magnetic and electronic properties. Especially, the Mn3–xGa thin film epitaxially grown on the SrTiO3 substrate, fully oriented along the c axis perpendicular to the film plane, exhibits significantly reduced saturation magnetization as low as 0.06 μB, compared to previous results. By the structural and chemical analyses, we find that the predominant removal of Mn II atoms and the large population of Mn3+ ions affect the reduced saturation magnetization. Our findings provide insights into the magnetic properties of Mn3–xGa crystals, which promise great potential for spin-related device applications.

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Transition from Anomalous Hall Effect to Topological Hall Effect in Hexagonal Non-Collinear Magnet Mn3Ga

Cited by 79 publications

References 23 publications

Anomalous transport due to Weyl fermions in the chiral antiferromagnets Mn3X, X = Sn, Ge

Anomalous transport due to Weyl fermions in the chiral antiferromagnets Mn3X, X = Sn, Ge

Probing magnetic anisotropy in Kagome antiferromagnetic Mn$_3$Ge with torque magnetometry

Highly Reduced Saturation Magnetization in Epitaxially Grown Ferrimagnetic Heusler Thin Films

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