Transit-Time Devices

Luy, J.-F.

doi:10.1007/978-3-642-79031-7_2

Cited by 9 publications

(4 citation statements)

References 72 publications

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“…is the lattice constant perpendicular to the interface. The elastic properties of the crystal link a i⊥ and a according to (7). In the following only the (001) interface will be considered [34], since it is the only one compatible with MOS technologies.…”

Section: 21mentioning

confidence: 99%

“…An example for the high level reached in the last years is the Si/SiGe heterobipolar transistor [7] (HBT), with demonstrated cut-off frequencies and maximum oscillation frequencies well beyond 100 GHz [8,9]. This is roughly a factor-of-two improvement as compared to the best existing Si bipolar junction transistors (BJTs), but, what is more important, the Si/SiGe HBT boosts Si-based technologies into an area that has so far been a exclusive domain of III-V devices.…”

Section: Introductionmentioning

confidence: 99%

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High-mobility Si and Ge structures

Schäffler¹

1997

Semicond. Sci. Technol.

768

488

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Silicon-based heterostructures have come a long way from the discovery of strain as a new and essential parameter for band structure engineering to the present state of electron and hole mobilities, which surpass those achieved in the traditional Si/SiO 2 material combination by more than an order of magnitude and are rapidly approaching the best III-V heteromaterials. It is the purpose of this article to report on the most recent developments, and the performance level achieved to date in this material system, in a concise and critical manner. The first part of this review is concerned with the structural and electronic properties of the lattice-mismatched Si/SiGe heterostructure. Emphases are put on the effects of strain both on the band structure and on the band offsets, as well as on means to actually control the strain in a stack of heteroepitaxial layers. The second part is dedicated to the transport properties of low-dimensional carrier systems in Si/SiGe and Ge/SiGe heterostructures. The prospects and limitations of the different layer concepts are discussed in terms of scattering mechanisms and experimental results. This part also reviews the most recent magneto-transport experiments on quantum wires and quantum point contacts, which became possible by the enhanced mean free paths in these materials. The third part covers the device aspects of these high-mobility materials, which is of special interest, because silicon-based heterostructures can significantly enhance the performance level of contemporary Si devices without sacrificing the essential compatibility with standard Si technologies. The recent achievements in this application-driven research field, but also the foreseeable problems and limitations, are discussed, and an assessment of the possible role of such heterodevices in future microelectronic circuits is given.

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Section: 21mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

High-mobility Si and Ge structures

Schäffler¹

1997

Semicond. Sci. Technol.

768

488

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“…By using these samples, 30 ' 2 µm 2 single-drift (SD) impact-ionization avalanche transit-time (IMPATT) diodes were processed with Si-based monolithic millimeter-wave integrated circuit (SIMMWIC) technology. 1,2) The samples within a small process window exhibited a large negative differential resistance at approximately the avalanche frequency, as confirmed by small-signal S-parameter characterization. A model based on depletion width was given to explain the conditions for the appearance of the negative differential IMPATT resistance, which is the basis of millimeter-wave amplifier and oscillator applications.…”

mentioning

confidence: 65%

S-parameter characterization and lumped-element modelling of millimeter-wave single-drift impact-ionization avalanche transit-time diode

Zhang

Yamamoto

Oehme

et al. 2016

Jpn. J. Appl. Phys.

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Five silicon (Si) p ++ -n % -n ++ samples were grown at various doping concentrations (1.0 ' 10 17 -2.2 ' 10 17 cm %3 ) in an n % layer by using the reduced-pressure CVD technique. By using these samples, 30 ' 2 µm 2 single-drift (SD) impact-ionization avalanche transit-time (IMPATT) diodes were processed with Si-based monolithic millimeter-wave integrated circuit (SIMMWIC) technology. 1,2) The samples within a small process window exhibited a large negative differential resistance at approximately the avalanche frequency, as confirmed by small-signal S-parameter characterization. A model based on depletion width was given to explain the conditions for the appearance of the negative differential IMPATT resistance, which is the basis of millimeter-wave amplifier and oscillator applications. Furthermore, a measurement-based small-signal lumpedelement model was established to describe the IMPATT functionality from the circuit component aspect. This lumped-element model shows a negative differential resistance within a well-defined range in the given element parameters, which can explain the experimental observations.

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“…The IMPATT diode is biased above the threshold for impact ionization. The carrier generation in connection with the transit time delay arising from the drift process causes a dynamic negative resistance [47]- [49]. The IMPATT diode provides high oscillator output power combined with high efficiency.…”

Section: Impatt Diodesmentioning

confidence: 99%

Si and SiGe millimeter-wave integrated circuits

Russer

1998

IEEE Trans. Microwave Theory Techn.

115

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Monolithic integrated millimeter-wave circuits based on silicon and SiGe are emerging as an attractive option in the field of millimeter-wave communications and millimeterwave sensorics. The combination of active devices with passive planar structures, including also antenna elements, allows single-chip realizations of complete millimeter-wave front-ends. This paper reviews the state-of-the-art silicon-and SiGe-based monolithic integrated millimeter-wave circuits. The technological background as well as active and nonlinear devices and passive circuit structures suitable for silicon-and SiGe-based monolithic integrated millimeter-wave circuits are discussed. Examples of such integrated circuits and first systems applications are also presented.Index Terms-Millimeter-wave IC, silicon-based RF circuits.

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Transit-Time Devices

Cited by 9 publications

References 72 publications

High-mobility Si and Ge structures

High-mobility Si and Ge structures

S-parameter characterization and lumped-element modelling of millimeter-wave single-drift impact-ionization avalanche transit-time diode

Si and SiGe millimeter-wave integrated circuits

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