Transistor challenges – A DRAM perspective

Faul, J.; Henke, D.

doi:10.1016/j.nimb.2004.12.140

Cited by 2 publications

(2 citation statements)

References 7 publications

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“…1) In the nanotechnology era, the surface properties of materials have become critical for the efficiency of devices because of their rapidly increasing density; thus, the requirements for material processing methods have become exacting. 2,3) For example, ion-beam etching and implantation are common methods in semiconductor manufacturing. However, the damage caused by the ion-beam irradiation is a serious drawback to the requirement of lower-damage processing for higher-density devices.…”

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confidence: 99%

Low-Damage and High-Rate Sputtering of Silicon Surfaces by Ethanol Cluster Ion Beam

Ryuto¹,

Sugiyama²,

Ozaki³

et al. 2009

Appl. Phys. Express

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To realize the high-rate and low-damage sputtering of a Si surface, the effect of irradiating an ethanol cluster ion beam on a Si surface was investigated. The sputtering depths in Si substrates induced by the ethanol cluster ion beam irradiation were larger than those in SiO 2 substrates, which was due to a chemical sputtering effect. The lattice disorder and the surface roughness of the Si substrates decreased with increasing retarding voltage.

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confidence: 99%

Low-Damage and High-Rate Sputtering of Silicon Surfaces by Ethanol Cluster Ion Beam

Ryuto¹,

Sugiyama²,

Ozaki³

et al. 2009

Appl. Phys. Express

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show abstract

“…The demand for material processing technologies for LSI devices has recently been increasing, and the development of new surface processes has been required [1][2][3]. For example, surface cleaning and etching processes are of much importance in semiconductor device fabrication.…”

Section: Introductionmentioning

confidence: 99%

Irradiation Effects of Methanol Cluster Ion Beams on Solid Surfaces

2007

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In order to investigate the interactions of methanol cluster ion beams with solid surfaces, Si substrates and SiO 2 films were irradiated at different acceleration voltages. The sputtered depth increased with increase of the acceleration voltage. When the acceleration voltage was 9 kV, the sputtered depths of Si and SiO 2 at a dose of 1×10 16 ions/cm 2 were 1497.1 nm and 147.8 nm, respectively. The selectivity between Si and SiO 2 surfaces arose from the volatility of the reaction products. Furthermore, the sputtering yield for the Si surface was approximately seven hundreds times larger than that by Ar monomer ion beams. This suggested that chemical sputtering was predominant for the methanol cluster ion irradiation. In addition, the etching and cleaning process by the methanol cluster ion irradiation was performed on the Si surfaces contaminated with a small amount of metal particles such as Au and Al. Thus, methanol cluster ion beams have unique characteristics such as surface etching and cleaning with high sputtering yield and smooth surface.

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Transistor challenges – A DRAM perspective

Cited by 2 publications

References 7 publications

Low-Damage and High-Rate Sputtering of Silicon Surfaces by Ethanol Cluster Ion Beam

Low-Damage and High-Rate Sputtering of Silicon Surfaces by Ethanol Cluster Ion Beam

Irradiation Effects of Methanol Cluster Ion Beams on Solid Surfaces

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