Transient synergistic damage mechanism and characterization of silicon bipolar junction transistor

Abstract

The Silicon bipolar junction transistor (Si BJT) is widely used as a discrete device, but it's susceptible to damage from both ionization and displacement in nuclear radiation environments. Current research primarily focuses on steady-state irradiation to study the synergistic damage mechanism caused by ionization and displacement, with a lack of research on transient synergistic damage. This paper studies the energy deposition and distribution with different incident angles and energies when neutrons and photons are simultaneously incident, and found similarities in the energy deposition between low-energy photons and 1 MeV neutrons as well as high-energy photons and 1 MeV neutrons in synergistic damage. Additionally, transient current under simultaneous neutron and photon irradiation was calculated using COMSOL software. Simulation results indicate that by adjusting the number of photons, it is feasible to simulate the transient electrical characteristics of high-energy photons utilizing low-energy photons for synergistic damage. Hence, a novel characterization method, combining laser simulation and neutron sources, is developed to test the transient electrical characteristics of Si BJT with synergistic damage.