Abstract:Transient CVD experiments were simulated by varying continuously the deposition temperature or the initial gas flow rates (Q(MTS) or Q(H2)). Their consequences on the physicochemical properties of the coatings have been first examined. The adhesion of SiC/SiC bilayers containing these "transient interphases" (phi(Tr)) was investigated by scratch testing. For transient stages resulting from a decrease of Q(MTS) or T, free silicon can be co-deposited in proportions depending on alpha = Q(H2)/Q(MTS), T and P. Thi… Show more
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