Transient Simulation on the Growth of Mono-like Silicon Ingot in DS Process Using Crucible with Plano-Concave Bottom for PV Applications

Sundaramahalingam, Sanmugavel; Aravindan, G.

doi:10.1007/s12633-021-01144-x

Cited by 3 publications

(3 citation statements)

References 31 publications

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“…The C comes from the surface reaction of the hot graphite parts. The transport pathway of O and C is mainly divided into five parts [17,25]: (1) the O dissolves in the silicon melt from the hot quartz crucible; (2) the O atoms dissolved in the silicon melt are transported to the free surface by diffusion and convection, and combine with silicon atoms to generate silicon monoxide (SiO) gas, which evaporates on the free surface; (3) the SiO is carried away by the argon flow to graphite part surfaces and reacts with C to form carbon monoxide (CO); (4) some of the reactant CO is transported back to the free surface by the effect of convection and diffusion, and then dissolves into the silicon melt in the form of C and O atoms; and (5) the C and O atoms at the crystal-melt (c-m) interface partially enter the growing silicon crystal by a segregation effect. The chemical reaction equations corresponding to the above impurities transport pathways are shown in Table 1.…”

Section: Coupled Model Of Oxygen and Carbon Transportmentioning

confidence: 99%

“…This method has the advantages of wider feedstock tolerance, relatively low production costs, higher throughputs, and simpler processes. In addition, the equipment is low cost, high yield, and of simple operation [1][2][3]. However, due to grain boundaries, dislocations, and impurity defects, the quality of the cast silicon ingot is reduced, significantly affecting solar cell performance.…”

Section: Introductionmentioning

confidence: 99%

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Design and Numerical Study of Argon Gas Diversion System Using Orthogonal Experiment to Reduce Impurities in Large-Sized Casting Silicon

Zhang

et al. 2022

Crystals

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To reduce oxygen and carbon impurities while casting silicon, an argon gas diversion system is proposed. A series of two-dimensional global transient numerical simulations are carried out using Fluent software according to the orthogonal experimental design, including heat transfer, convection of silicon melt and argon gas, and the fully coupling transport of impurities. The numerical results show that when the distance between the outer tube outlet and the cover is 10 mm, the backflow is inhibited by lateral outflow, thus the generation of CO is suppressed and the penetration of impurities into the silicon melt is decreased. The larger the flow rate, the more obvious the effect is. When the outer tube outlet is far from the cover, the effect of removing impurities is no longer significant. In addition, too large or too small an inner tube flow rate is not conducive to impurity reduction. The optimal parameter combination of outer tube flow rate, inner tube flow rate, and the distance between outer tube outlet and the cover are determined by the orthogonal experiment. Compared with the original furnace, the average concentration of oxygen and carbon in casting silicon ingots could be decreased by 7.4% and 59.9%, respectively, by using the optimized argon gas diversion system.

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Section: Coupled Model Of Oxygen and Carbon Transportmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Design and Numerical Study of Argon Gas Diversion System Using Orthogonal Experiment to Reduce Impurities in Large-Sized Casting Silicon

Zhang

et al. 2022

Crystals

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“…To optimize the m-c interface and reduce thermal stress, Sundaramahalingam et al designed a crucible with a concave bottom to strengthen the local cooling at the bottom of the crucible and obtained a better m-c interface by comparing the four thicknesses of the bottom [24] . Yang et al added a conical heat insulation device at the bottom of the traditional furnace to obtain crystals with lower convexity, lower thermal stress, and better quality compared with the traditional furnace [25] .…”

Section: Introductionmentioning

confidence: 99%

Numerical Investigation on the Effect of Thermal Gate Moving Rate on Directional Solidification Process

Guan

et al. 2022

Silicon

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The temperature eld distribution during the growth of crystalline silicon by the directional solidi cation (DS) method is an important factor affecting the growth rate, the shape of the melt-crystal (m-c) interface, and thermal stress. To solve the problem of m-c interface convexity at the early stage of crystal growth caused by supercooling at the bottom center of silicon ingot during DS. In this paper, a two-dimensional global transient numerical model based on a large-size ALD-G7 (G7) crystalline silicon ingot furnace is established and experimentally veri ed. Based on the model, the in uence of different bottom thermal gate moving process curves on the convexity of the m-c interface at the early stage was studied, with emphasis on the changes in temperature eld, m-c interface, and thermal stress at the early stage of crystal growth. We have designed three cases, case 1 uses the original moving process curve of bottom thermal gate, case 2 and case 3 adjust the process curve to 0.95 and 0.9 of the original ratio, respectively.The numerical results show that the center cooling condition of silicon ingot and the convexity of the m-c interface are improved with the decreasing of thermal gate moving rate. Compared with case 1, the convexity of case 2 and case 3 is reduced by 55% and 44% on average, respectively.

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Numerical investigation on the effect of thermal gate moving rate on directional solidification process

Guan

et al. 2022

Preprint

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The temperature field distribution during the growth of crystalline silicon by the directional solidification (DS) method is an important factor affecting the growth rate, the shape of the melt-crystal (m-c) interface, and thermal stress. To solve the problem of m-c interface convexity at the early stage of crystal growth caused by supercooling at the bottom center of silicon ingot during DS. In this paper, a two-dimensional global transient numerical model based on a large-size ALD-G7 (G7) crystalline silicon ingot furnace is established and experimentally verified. Based on the model, the influence of different bottom thermal gate moving process curves on the convexity of the m-c interface at the early stage was studied, with emphasis on the changes in temperature field, m-c interface, and thermal stress at the early stage of crystal growth. We have designed three cases, case 1 uses the original moving process curve of bottom thermal gate, case 2 and case 3 adjust the process curve to 0.95 and 0.9 of the original ratio, respectively. The numerical results show that the center cooling condition of silicon ingot and the convexity of the m-c interface are improved with the decreasing of thermal gate moving rate. Compared with case 1, the convexity of case 2 and case 3 is reduced by 55% and 44% on average, respectively.

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Transient Simulation on the Growth of Mono-like Silicon Ingot in DS Process Using Crucible with Plano-Concave Bottom for PV Applications

Cited by 3 publications

References 31 publications

Design and Numerical Study of Argon Gas Diversion System Using Orthogonal Experiment to Reduce Impurities in Large-Sized Casting Silicon

Design and Numerical Study of Argon Gas Diversion System Using Orthogonal Experiment to Reduce Impurities in Large-Sized Casting Silicon

Numerical Investigation on the Effect of Thermal Gate Moving Rate on Directional Solidification Process

Numerical investigation on the effect of thermal gate moving rate on directional solidification process

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