Transient response of optoelectronic integrated bistable device

Zebda, Y.; Khodier, Majid; Darwish, B.

doi:10.1109/16.658815

Cited by 6 publications

(3 citation statements)

References 14 publications

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“…Moreover, the contrast transfer function is improved with the decrease of layers, as illustrated in Fig. (4). The applied electric field increases with the number of layers within OEID structure.…”

Section: Contrast Transfer Characteristicsmentioning

confidence: 88%

“…Figures (3)(4)(5)(6) show the dependence of contrast transfer function on the wave number of image nonuniformity for devices with different lifetime ratios (τ1/τr), number of layers, and a period of the OEID structure, and thicknesses of the active portions of the device, respectively. From these figures, the nonuniformity of incident FIR radiation increases the nonuniform photocurrent.…”

Section: Contrast Transfer Characteristicsmentioning

confidence: 99%

“…In recent years, there has been an increased demand for short-distance optical interconnects (OIs) such as high-speed communications between microprocessors and memory for large data processing [1,2]. Lately, there has been an increase in interest in optoelectronic integrated devices, which comprise the core in different optical signal processing and optical computing systems [3][4][5]. Optoelectronic integrated devices (OEIDs), manufactured by the epitaxial integration of optoelectronic products are encouraging optimal communication and optical information processing areas [6][7][8][9].…”

Section: Introductionmentioning

confidence: 99%

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Contrast Transfer Characteristics of Integrated Images Based on Optoelectronic Integration between Quantum Well Photodetector and Light Emitting Diod

Tokhy

Emarah

Fikry

2021

Arab Journal of Nuclear Sciences and Applications

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The present study is concerned with overcoming the resultant image degradation due to the integration of the optoelectronics instruments (OEIDs). Accordingly, the characteristics of the image, due to optoelectronic integration, are handled and improved. The image features include the transmission mechanism and the concentration of electrons. The device performance is improved through the optimal design of the basic parameters. Furthermore, the efficient design of structure parameters will minimize the reabsorption process. Optimization of the integrator structure is realized. MATLAB environment is used for devising this instrument. The optimal number of integrator base and wave number characterizing the scale of near-infrared (NIR) image nonuniformity are estimated to be 13 and 0.206 respectively. The output of this instrument is also conducted through closed-form expressions of the underlined instrument. The achieved results show a remarkable accuracy for handling the deformations raised during the integration process. In addition, the results show that the carrier concentration changes the behavior of the output of the NIR image.

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Section: Contrast Transfer Characteristicsmentioning

confidence: 88%