Transient Pulsed S-Parameters for Trapping Characterization

Gomes, João L.; Nunes, Luís C.; Pedro, José C.

doi:10.1109/inmmic46721.2020.9160297

Cited by 5 publications

(1 citation statement)

References 13 publications

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“…Time-domain measurements are aimed at linking the trap occupation to the gate/drain current delay in response to specific stimuli such as voltage steps or pulses [10,11]. In the frequency domain, small-signal parameters [12], noise [13] or pulsed S-parameters [14,15] are used to assess the trap-related dispersion of AC and RF parameters. These techniques date back to the 1960s when silicon technology development was assisted by the AC characterization of the MOS structure in the presence of interface traps [16,17].…”

Section: Introductionmentioning

confidence: 99%

TCAD Modeling of GaN HEMT Output Admittance Dispersion through Trap Rate Equation Green’s Functions

2023

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We present a novel and numerically efficient approach to analyse the sensitivity of AC parameters to variations of traps in GaN HEMTs. The approach exploits an in-house TCAD simulator implementing the drift-diffusion model self-consistently coupled with trap rate equations, solved in dynamic conditions with the Harmonic Balance algorithm. The capability of the model is demonstrated studying the low-frequency dispersion of a 150 nm gate-length AlGaN/GaN HEMT output admittance YDD as a function of the trap energy of Fe-induced buffer traps. The real part of YDD exhibits strong frequency dispersion and an important degradation of the output resistance at high frequency. The imaginary part is characterized by a peak at a frequency decreasing with trap energy deeper in the gap, in agreement with experimental data on similar structures. Distributed local sources show that YDD is most sensitive to trap energy variations localized in the buffer region under the gate, peaking under the unsaturated portion of channel towards the source. Trap variations affect the output admittance when localized in depth into the buffer up to a 100 nm distance from the channel.

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