Transient photoconductivity responses in amorphous In-Ga-Zn-O films

Yasuno, Shinji; Kita, Takashi; Morita, Shinya; Kugimiya, Toshihiro; Hayashi, Kazushi; Sumie, Shingo

doi:10.1063/1.4751433

Cited by 43 publications

(33 citation statements)

References 51 publications

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“…As a result of the defects strongly associated with electrical properties of semiconductor films, the quality of a‐STO films with varying Si content were further evaluated by μ‐PCD method. The μ‐PCD measurement is a nondestructive, contactless, and convenient technique to assess the quality of semiconductor films by analyzing the results of microwave reflectivity signal . The microwave response curve consists of a peak, fast decay, and slow decay, in which the two major parameters, ie, peak value and D value, can be obtained.…”

Section: Resultsmentioning

confidence: 99%

Flexible thin‐film transistors application of amorphous tin oxide‐based semiconductors

et al. 2019

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The structural, optical, and electrical properties of Si‐doped SnO2 (STO) films were investigated in terms of their potential applications for flexible electronic devices. All STO films were amorphous with an optical transmittance of ~90%. The optical band gap was widened as the Si content increased. The Hall mobility and carrier density were improved in the SnO2 with 1 wt% Si film, which was attributed to the formation of donor states. Si (1 wt%) doped SnO2 thin‐film transistor exhibited a good device performance and good stability with a saturation mobility of 6.38 cm2/Vs, a large Ion/Ioff of 1.44 × 107, and a SS value of 0.77 V/decade. The device mobility of a‐STO TFTs at different bending radius maintained still at a high level. These results suggest that a‐STO thin films are promising for fabricating flexible TFTs.

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Section: Resultsmentioning

confidence: 99%

Flexible thin‐film transistors application of amorphous tin oxide‐based semiconductors

et al. 2019

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“…It is understood that the fast decay is reported due to recombination center as shown in Fig. 12 [3]. On the other hand, the origin of the slow decay τ 2 is related to the phenomena that the laser-exited carriers are trapped at the localized states (i.e.…”

Section: Discussionmentioning

confidence: 99%

“…The decay curve can be divided into three components; the peak value, and the two kinds of decay including the fast and the slow decay constants, which is different from the decay curves obtained on LTPS thin films [10]. According to our previous study [3], we assumed that the density of the carriers participating in the microwave conductivity obeys the following equation after photoexcitation:…”

Section: Interpretation Of µ-Pcd Signals and Determination Of τ 2 As mentioning

confidence: 99%

“…In the previous study [3], one can extract the optimized conditions which give the reasonable TFT mobility by measuring the peak values of the decay curves. The peak value mapping on a whole substrate will help to understand the uniformity of the characteristics of the a-IGZO film.…”

Section: Mapping Measurementsmentioning

confidence: 99%

“…In our previous study, it was found that a strong correlation between the TFT mobilities and the peak values of the microwave photoconductivity decay (µ-PCD) signals for the corresponding a-IGZO thin films [2]- [3]. The decay curve of the µ-PCD consists of at least two kinds of decay components, namely the fast and the slow decay curves.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

In-line Process Monitoring for Amorphous Oxide Semiconductor TFT Fabrication using Microwave-detected Photoconductivity Decay Technique

Okuno

Tao

Morita

et al. 2014

IEICE Trans. Electron.

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SUMMARYWe have investigated the microwave-detected photoconductivity responses from the amorphous In-Ga-Zn-O (a-IGZO) thin films. The time constant extracted by the slope of the slow part of the reflectivity signals are correlated with TFT performances. We have evaluated the influences of the sputtering conditions on the quality of a-IGZO thin film, as well as the influences of gate insulation films and annealing conditions, by comparing the TFT characteristics with the microwave photoconductivity decay (µ-PCD). It is concluded that the µ-PCD is a promising method for in-line process monitoring for the IGZO-TFTs fabrication. key words: oxide semiconductor, thin film transistor, microwave-detected photoconductivity decay, in-line process monitoring

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Implementing Room‐Temperature Fabrication of Flexible Amorphous Sn–Si–O TFTs via Defect Control

Liu

Zhang

Shiah

et al. 2021

Adv Materials Inter

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Recently, amorphous oxide semiconductors (AOSs) have attracted much attention owing to their various advantages. The intrinsic nature of AOSs enables to achieve high‐performance thin‐film transistors (TFTs) using low‐temperature process, which would be a strong point for next‐generation flexible electronics. However, most AOS TFTs still require postannealing treatments (>300 °C) for structural relaxation to suppress defects, which lead to the issue of thermal resistance of plastic substrates. Therefore, a strategy for obtaining both low‐temperature process and defect suppression is highly demanded for flexible electronics. To solve the former issue, a Sn–Si–O system is proposed in this paper. It is clarified that Si cations play the roles of amorphousizing SnO2 and suppressing carrier concentration. As a result, room‐temperature fabricable flexible Sn–Si–O TFTs with high mobility and high reliability are demonstrated. It is also suggested that obtaining a rigid film structure is quite important to fabricate high performance TFTs without any further postannealing treatment. The obtained saturation mobility (μsat) and on/off ratio are 7.59 cm2 V−1 s−1 and 1.59 × 107, respectively. This work suggests that amorphous Si doped SnO2 has the potential for the application to the flexible driving backplane in display industry.

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Transient photoconductivity responses in amorphous In-Ga-Zn-O films

Cited by 43 publications

References 51 publications

Flexible thin‐film transistors application of amorphous tin oxide‐based semiconductors

Flexible thin‐film transistors application of amorphous tin oxide‐based semiconductors

In-line Process Monitoring for Amorphous Oxide Semiconductor TFT Fabrication using Microwave-detected Photoconductivity Decay Technique

Implementing Room‐Temperature Fabrication of Flexible Amorphous Sn–Si–O TFTs via Defect Control

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