Transient mode competition in directly modulated DFB semiconductor laser

Abstract

A new effect of transient mode competition in directly modulated DFB laser based on equivalent phase-shift (EPS) technique is presented and studied. Since there are multi-order reflections in EPS structure and if the 0th order subgrating is properly designed, the transient lasing of 0th order will occur during the rising time of the injection current. As a result, transient mode competition between 1st order (main mode) and 0th order will occur accordingly. This can consume redundant carrier and suppress the transient relaxation oscillation, which may be applied in some areas like on-off switching modulation of DFB semiconductor lasers. As an example, an equivalent  phase shift (-EPS) is carefully designed to realize the effect. In such a laser the 0th order wavelength is in the margin of the material gain region and the 1st order wavelength is around the gain peak, while the stable single longitudinal mode (SLM) operation of the 1st order is guaranteed. The simulation investigation is performed. Good results with suppressed relaxation oscillation and 1.25 Gb/s directly on-off modulation (32 dB extinction ratio) are demonstrated. We believe it provides a new kind of method for on-off switching with high extinction ratio and weak relaxation oscillation. DFB semiconductor laser, mode competition, relaxation oscillation, sampled grating PACS number(s): 42.55.Px, 42.60.Mi, 42.60.Rn Citation: Xiao R L, Shi Y C, Zheng J L, et al. Transient mode competition in directly modulated DFB semiconductor laser.