Transient lateral photovoltaic effect in patterned metal-oxide-semiconductor films

Cascales, Juan Pedro; Martínez, Isidoro; Diaz, David; Rodrigo, José A.; Aliev, F. G.

doi:10.1063/1.4882701

Cited by 26 publications

(30 citation statements)

References 20 publications

(33 reference statements)

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“…This unexpected behaviour has been explained by the influence of a local inductance of the Cobalt line structure, 23 in addition to a corresponding local capacitance and resistance which were previously, the only factors considered for wider LPE devices.…”

Section: Discussionmentioning

confidence: 99%

“…We observe a substantial increase of the position sensitivity of patterned line structures when their width is reduced, measured by the peak to peak response. Preliminary results related to this part which were reported by Cascales et al 23 have been expanded and detailed in the present manuscript. In addition, we report on the substantial influence of the magnetic state on T-LPE and link it with the anisotropic magnetoresistance (AMR) of Co films.…”

Section: Introductionmentioning

confidence: 91%

“…In a previous publication, 23 we were able to reproduce qualitatively both the linear dependence and the offset at non-zero offset of the T-LPE amplitude by using a one dimensional drift-diffusion model 1, 2 which calculates the stationary potential distribution and potential difference employing two different (Robin / 3-rd type) boundary conditions. We have also described the peak-like T-LPE and its sign inversion in the off state by adding a term to the equation for the dynamic T-LPE response in wide two-dimensional structures.…”

Section: Analytical Model Of the T-lpe In Mos Patterned Linesmentioning

confidence: 99%

“…23 Using the resistance of the 10 µm Co line, we obtain an estimate of the capacitance and inductance of the strip from the fit. The resistance of the 5 µm sample is twice that of the 10 µm strip, and using as capacitance half of what was obtained for the 10 µm sample, we obtain values of inductance which are 60 % higher.…”

Section: Analytical Model Of the T-lpe In Mos Patterned Linesmentioning

confidence: 99%

“…Depending on the roll-off frequency of the amplifier filter, the detection of the fast "laser off" transition can be affected, as was shown elsewhere. 23 The voltage, amplified up to 10 5 times, was measured using a NI-PCI 5922 digitizer which works at frequencies up to 2MHz. The square wave used to modulate the laser pulses was supplied by a Keithley K6221 current source.…”

Section: Real Time T-lpe Measurementsmentioning

confidence: 99%

See 4 more Smart Citations

Transient lateral photovoltaic effect in patterned ferromagnetic metal-oxide-semiconductor films

Martínez

Cascales²,

Lara

et al. 2015

SPIE Proceedings

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The time dependent transient lateral photovoltaic effect (T-LPE) has been studied with microsecond time resolution and with chopping frequencies in the kHz range, in lithographically patterned 21 nm thick, 5, 10 and 20 micron wide and 1500 micron long Co lines grown over naturally passivated p-type Si (100). We have observed a nearly linear dependence of the LPE transient response with the laser spot position. An unusual T-LPE dynamic response with a sign change in the laser-off stage has also been corroborated by numerical simulations. A qualitative explanation suggests a modification of the drift-diffusion model by including the influence of a local inductance. In addition, influence of anisotropic magnetoresistance of the Co line structure on dynamic response on T-LPE has been investigated. Specifically, we have experimentally investigated influence of the direction of the external magnetic field respect to the drift velocity of the photogenerated carriers on the T-LPE. We have observed notable dependence of the T-LPE on the magnetic field in the small field range (below 100 Oe), compatible with anisotropic magnetoresistance values. The strong influence of the magnetization alignment on the dynamic response of photogenerated carriers has been also observed through a phase sensitive lock-in experiment. These findings indicate that the microstructuring of the ferromagnetic line based position sensitive detectors (PSD) could improve their space-time resolution and add capability of magnetic field tuning of the main PSD characteristics.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 91%

Section: Analytical Model Of the T-lpe In Mos Patterned Linesmentioning

confidence: 99%

Section: Analytical Model Of the T-lpe In Mos Patterned Linesmentioning

confidence: 99%

Section: Real Time T-lpe Measurementsmentioning

confidence: 99%

See 3 more Smart Citations

Transient lateral photovoltaic effect in patterned ferromagnetic metal-oxide-semiconductor films

Martínez

Cascales²,

Lara

et al. 2015

SPIE Proceedings

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A Laser and Electric Pulse Modulated Nonvolatile Photoelectric Response in Nanoscale Copper Dusted Metal‐Oxide‐Semiconductor Structures

Gan

Zhou

Dong

et al. 2018

Adv Elect Materials

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therefore to explore possibilities for the design of MOS devices and architectures that can control or adjust the Schottky barrier and then modulate its photoelectric response.Early studies in this area focused on changing the Schottky barrier height (SBH) by the adjustment of oxide layer thickness and metal coverage, as exemplified by the work of Peckerar [15] and Doniach et al. [16] in the 1970s and 1980s, where it was found that the SBH always increased with both the oxide layer thickness and the extent of metal coverage. Subsequently, with the downscaling of MOS devices to nanometer dimensions, more sophisticated methods for control of the SBH have been investigated. Such methods include atomic-level chemical modification of the semiconductor interface, [17] embedment of quantum wells in the semiconductor layer, [18] and replacement of the metal layer by an inorganic-organic hybrid to overcome Fermi-level pinning. [8] All of these methods for altering the SBH are, however, confined to the fabrication stage, after which the SBH for the MOS-structure is fixed. Some modification of the SBH of a MOS structure during operation stage has also been tried and proved to be effective through the application of either light or an electric field. However, these changes are always volatile, scilicet the Schottky barrier reverts to its initial as-fabricated state once the external field is removed. Only a few studies [19] on nonvolatile SBH control were reported in recent years. In this letter we report the observation of a tunable photoelectric effect in a nanoscale MOS structure, and demonstrate that this tunable effect is dominated by control of the SBH through combined application of laser illumination and electric pulses. The most striking feature of this controllable change of the SBH is its nonvolatility and unique trigger manner. The work may provide an opportunity for the development of novel MOS devices with a wider range of applications.

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Transient lateral photovoltaic effect observed in Ti–SiO2–Si structure

Ling

Zhu

et al. 2022

Opt Rev

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The transient response of the lateral photovoltaic effect (LPE) was observed when Ti-SiO 2 -Si structure was irradiated by a 650 nm laser at room temperature. The lateral photovoltage (LPV) was measured by voltmeter, which is linearly dependent on the laser irradiation position. In this paper, we described the dynamic process of LPE when Ti-SiO 2 -Si was irradiated by laser. The LPE has high sensitivity of 59mV/mm and linearity of 0.9924, respectively. Furthermore, the experimental phenomenon is explained by the carrier diffusion theory. And a resistor-capacitor (RC) circuits model combines with traditional LPE is established to simulate the transient response. These results suggest that the Ti-SiO 2 -Si structure is a potential choice for optoelectronic devices applied in the sensors eld.

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Transient lateral photovoltaic effect in patterned metal-oxide-semiconductor films

Abstract: Subband gap photoresponse of nanocrystalline silicon in a metal-oxide-semiconductor device J. Appl. Phys.

Cited by 26 publications

References 20 publications

Transient lateral photovoltaic effect in patterned ferromagnetic metal-oxide-semiconductor films

Transient lateral photovoltaic effect in patterned ferromagnetic metal-oxide-semiconductor films

A Laser and Electric Pulse Modulated Nonvolatile Photoelectric Response in Nanoscale Copper Dusted Metal‐Oxide‐Semiconductor Structures

Transient lateral photovoltaic effect observed in Ti–SiO2–Si structure

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