Transient‐Current Technique Characterization of Diamond Detector and Proposal of a Diamond Detector with Charge Amplification

Abstract

Diamond holds promise as a potential candidate for future particle detectors owing to its remarkable electronic, mechanical, and thermal properties. However, a notable limitation is the need for a comprehensive model characterizing intrinsic diamond detectors. To address this, a specialized model integrated into the technology computer‐aided design simulation program is developed. The model's validation is accomplished through its application to the evaluation of an intrinsic diamond detector. Our investigation emphasizes three key attributes: charge carrier mobility, charge carrier lifetime, and the effective charge density within the bulk material. These attributes are carefully assessed using the transient current technique. Furthermore, our model serves as a valuable tool in the analysis of the quality of an high‐pressure high‐temperature diamond crystal and in the optimization of a diamond detector's design, exploiting the charge multiplication effect. This comprehensive methodology advances our grasp of diamond detector behavior and facilitates the development of even more sophisticated devices.