Transient Cooling and Heating Effects in Holey Silicon-Based Lateral Thermoelectric Devices for Hot Spot Thermal Management

Ren, Zongqing; Kim, Jae Choon; Lee, Jaeho

doi:10.1109/tcpmt.2021.3081375

Cited by 9 publications

(3 citation statements)

References 51 publications

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“…This is 2.67 times higher than that of the precooling scenario (150 mV). In fact, such transient TEC pulse with excessive voltage has been widely discussed in the previous studies [45], [46], [47], which provides early supercooling, followed by late temperature overshoot. In the co-cooling scenario, the supercooling aligns with the heat pulse while the subsequential temperature overshoot is offset by sudden removal of the heat pulse.…”

Section: Tec Precooling Effect and Its Pulse Duration-dependent Cooli...mentioning

confidence: 96%

Dynamic Thermal Management in SOI Transistors Using Holey Silicon-Based Thermoelectric Cooling

Luo,

Lim,

Chen

et al. 2024

IEEE Trans. Electron Devices

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Silicon-on-insulator (SOI) technology offers many advantages for transistors while also presenting significant challenges in thermal management. The buried oxide (BOX) layer impedes vertical heat dissipation, rendering conventional cooling solutions based on air and liquid coolers inefficient. In this study, we propose a novel theoretical design of a holey silicon-based lateral thermoelectric cooler (TEC) that provides a unique cooling solution for SOI transistors. By redistributing heat laterally, this TEC overcomes the limitation of poor vertical heat dissipation caused by the BOX layer, meanwhile taking advantage of the sustained temperature gradient in the device layer. In addition, we present a novel precooling strategy which utilizes a long-time, optimal-voltage TEC cooling pulse to cool down a short-time, high-power-density heating pulse. We evaluate the cooling performance through simulation of two devices: an SOI transistor-TEC device and a 5 × 5 SOI transistor-TEC array device. Under a 10 µs transient heat pulse with high-power density of 11 000 W/cm 2 (1.6 W), the SOI transistor-TEC device with a 10 µm thick BOX layer can be cooled from 465.7 • C down to 407.4 • C ( T = 58.3 • C) in peak hotspot temperature when precooled with a 1000 µs TEC pulse, consuming 0.20 W of TEC power. Furthermore, the SOI transistor-TEC array device provides spatial temperature control by incorporating multiple coolers which enable selective cooling for individual transistor units without significant loss of cooling performance. In summary, our TEC design exhibits great potential in offering dynamic thermal management for a wide range of advanced SOI devices.

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Section: Tec Precooling Effect and Its Pulse Duration-dependent Cooli...mentioning

confidence: 96%

Dynamic Thermal Management in SOI Transistors Using Holey Silicon-Based Thermoelectric Cooling

Luo,

Lim,

Chen

et al. 2024

IEEE Trans. Electron Devices

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“…Particular emphasis was given to the transient supercooling effect, which occurs when a single or continuous train of current pulses, as opposed to constant current, is driven through a thermoelectric refrigerator. When compared to applying optimal DC current to minimize the steady-state temperature at the cold-side, a current pulse can temporarily induce a greater temperature difference between the hot and cold-sides if the hot-side is maintained at room temperature 5 , 14 – 22 . These papers demonstrate that instantaneous Peltier cooling at the cold side of the device can further depress temperatures before it is opposed by parasitic Joule heat, that is generated volumetrically and takes time to diffuse.…”

Section: Introductionmentioning

confidence: 99%

Thermoelectric active cooling for transient hot spots in microprocessors

Liu,

Cheng,

Malen

et al. 2024

Nat Commun

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Modern microprocessor performance is limited by local hot spots induced at high frequency by busy integrated circuit elements such as the clock generator. Locally embedded thermoelectric devices (TEDs) are proposed to perform active cooling whereby thermoelectric effects enhance passive cooling by the Fourier law in removing heat from the hot spot to colder regions. To mitigate transient heating events and improve temperature stability, we propose a novel analytical solution that describes the temperature response of a periodically heated hot spot that is actively cooled by a TED driven electrically at the same frequency. The analytical solution that we present is validated by experimental data from frequency domain thermal reflectance (FDTR) measurements made directly on an actively cooled Si thermoelectric device where the pump laser replicates the transient hot spot. We herein demonstrate a practical method to actively cancel the transient temperature variations on circuit elements with TEDs. This result opens a new path to optimize the design of cooling systems for transient localized hot spots in integrated circuits.

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“…The research provides a theoretical basis and practical guidance for achieving transient thermal management in the vicinity of hot junctions. Ren et al [32] proposed a porous silicon-based lateral TEC and explored the temporal and spatial interactions of Peltier cooling, Joule heating, and the Thomson effect under different pulse conditions and material properties. Simulation results showed that thermal conductivity anisotropy was favorable to delaying diffusion in the lateral direction and allowed rapid heat dissipation in the vertical direction simultaneously.…”

Section: Introductionmentioning

confidence: 99%

The Transient Cooling Performance of a Compact Thin-Film Thermoelectric Cooler with Horizontal Structure

Ming,

Liu,

Zhang

et al. 2023

Energies

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Thermoelectric cooling is an ideal solution for chip heat dissipation due to its characteristics of no refrigerant, no vibration, no moving parts, and easy integration. Compared with a traditional thermoelectric device, a thin-film thermoelectric device significantly improves the cooling density and has tremendous advantages in the temperature control of electronic devices with high-power pulses. In this paper, the transient cooling performance of a compact thin-film thermoelectric cooler with a horizontal structure was studied. A 3D multi-physics field numerical model with the Thomson effect considered was established. And the effects of impulse current, thermoelectric leg length, pulse current imposition time, and the size of the contact thermal resistance on the cooling performance of the device were comprehensively investigated. The results showed that the model achieved an active cooling temperature difference of 25.85 K when an impulse current of 0.26 A was imposed. The longer the length of the thermoelectric leg was, the more unfavorable it was to the chip heat dissipation. Due to the small contact area between different sections of the device, the effect of contact thermal resistance on the cooling performance of the device was moderate.

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Transient Cooling and Heating Effects in Holey Silicon-Based Lateral Thermoelectric Devices for Hot Spot Thermal Management

Cited by 9 publications

References 51 publications

Dynamic Thermal Management in SOI Transistors Using Holey Silicon-Based Thermoelectric Cooling

Dynamic Thermal Management in SOI Transistors Using Holey Silicon-Based Thermoelectric Cooling

Thermoelectric active cooling for transient hot spots in microprocessors

The Transient Cooling Performance of a Compact Thin-Film Thermoelectric Cooler with Horizontal Structure

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