Transient charge carrier distribution at UV-photoexcited<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">SiO</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mo>/</mml:mo><mml:mi mathvariant="normal">S</mml:mi><mml:mi mathvariant="normal">i</mml:mi></mml:math>interfaces

Marsi, M.; Belkhou, Rachid; Grupp, C.; Panaccione, G.; Taleb‐Ibrahimi, A.; Nahon, Laurent; Garzella, D.; Nutarelli, D.; Renault, Eric; Roux, R.; Couprie, M.E.; Billardon, M.

doi:10.1103/physrevb.61.r5070

Cited by 52 publications

(43 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Surface charging processes have previously also been investigated by electric field induced second harmonic generation (EFISH), [62][63][64][65][66][67] in which the sub-surface electric field is deduced based on modeling the field-enhancement of optical second harmonic generation signal as well as photoemission. [68] We find that the field strength E ∼ 1-5 V/nm, obtained in our study of the Si/SiO 2 interface, is very similar to what was found in EFISH studies under similar excitation conditions, [65,66] but because of a lower laser repetition rate is applied here (1 kHz in UEDV, compared to 80 MHz in EFISH), cyclic residual charge accumulation from deep trap states [69][70][71][72] is avoided, allowing the transient charging behavior to be resolved directly.…”

Section: Surface Photovoltagementioning

confidence: 99%

Ultrafast Electron Diffractive Voltammetry: General Formalism and Applications

et al. 2011

View full text Add to dashboard Cite

We present a general formalism of ultrafast diffractive voltammetry approach as a contact-free tool to investigate the ultrafast surface charge dynamics in nanostructured interfaces. As case studies, the photoinduced surface charging processes in oxidized silicon surface and the hot electron dynamics in nanoparticle-decorated interface are examined based on the diffractive voltammetry framework. We identify that the charge redistribution processes appear on the surface, sub-surface, and vacuum levels when driven by intense femtosecond laser pulses. To elucidate the voltammetry contribution from different sources, we perform controlled experiments using shadow imaging techniques and N-particle simulations to aid the investigation of the photovoltage dynamics in the presence of photoemission. We show that voltammetry contribution associated with photoemission has a long decay tail and plays a more visible role in the nanosecond timescale, whereas the ultrafast voltammetry are dominated by local charge transfer, such as surface charging and molecular charge transport at nanostructured interfaces. We also discuss the general applicability of the diffractive voltammetry as an integral part of quantitative ultrafast electron diffraction methodology in researching different types of interfaces having distinctive surface diffraction and boundary conditions.

show abstract

Section: Surface Photovoltagementioning

confidence: 99%

Ultrafast Electron Diffractive Voltammetry: General Formalism and Applications

et al. 2011

View full text Add to dashboard Cite

show abstract

“…[3][4][5][6] Photoemission utilizing UV, X-rays, and lasers has also been employed for probing very fast (<10 -9 s) charging dynamics. [7][8][9] Core-level X-ray photoemission, XPS, is especially attractive, since additional chemical information can also be derived from the line positions of the corresponding peaks. However, the measured line positions are severely altered by local potentials developed due to the uncompensated charges resulting from photoelectron emission, especially for poorly conducting samples or regions (layers or domains) within such samples.…”

mentioning

confidence: 99%

X-ray Photoemission for Probing Charging/Discharging Dynamics

Süzer

Dâna

2006

J. Phys. Chem. B

View full text Add to dashboard Cite

A novel technique is introduced for probing charging/discharging dynamics of dielectric materials in which X-ray photoemission data is recorded while the sample rod is subjected to (10.0 V square-wave pulses with varying frequencies in the range of 10 -3 to 10 3 Hz. For a clean silicon sample, the Si2p(Si 0 ) peak appears at correspondingly -10.0 eV and +10.0 eV binding energy positions (20.0 eV difference) with no frequency dependence. However, the corresponding peak of the oxide (Si 4+ ) appears with less than 20.0 eV difference and exhibits a strong frequency dependence due to charging of the oxide layer, which is faithfully reproduced by a theoretical model. In the simplest application of this technique, we show that the two O1s components can be assigned to SiO x and TiO y moeties by correlating their dynamical shifts to those of the Si2p and Ti2p peaks in a composite sample. Our pulsing technique turns the powerful X-ray photoemission into an even more powerful impedance spectrometer with an added advantage of chemical resolution and specificity.Charge accumulation and dissipation (charging/discharging) in dielectric materials are vital processes for design and function of various devices and sensors. 1 This is especially important for SiO 2 , as the thickness of the dielectric layer is expected to shrink down to few atomic layers for the next generation of metal oxide semiconductor (MOS) devices. 2 Charge accumulation in the oxide layer occurs via various trapping mechanisms and is normally probed by electrical current-voltage and/or current-capacitance measurements. [3][4][5][6] Photoemission utilizing UV, X-rays, and lasers has also been employed for probing very fast (<10 -9 s) charging dynamics. 7-9 Core-level X-ray photoemission, XPS, is especially attractive, since additional chemical information can also be derived from the line positions of the corresponding peaks. However, the measured line positions are severely altered by local potentials developed due to the uncompensated charges resulting from photoelectron emission, especially for poorly conducting samples or regions (layers or domains) within such samples. [10][11][12][13][14][15][16] Various methods of charge compensation have been developed using low-energy electrons, ions, and/or photons. 17,18 On the other hand, one can also utilize XPS for understanding the mechanisms leading to and/or controlling of the charging/ discharging processes in materials which offer great possibilities for researchers in all fields. 19 Several applications have been reported, which utilize the charging, called controlled surface charging, for extracting chemical, physical, structural, and electrical parameters of various surface species. 20-26 Using a slightly different strategy and by applying voltage stress to the sample rod while recording XPS spectra, we have shown that the extent of charging can be controlled and various analytical and electrical information can be extracted. [27][28][29][30][31][32] In addition to static information derived from applic...

show abstract

“…In conventional data gathering mode the sample is grounded, and the position as well as the intensity of the peaks are recorded in a static fashion [20]. Although several reports have appeared in the literature related to dynamical XPS measurements in the two extreme ends, very fast (nanoseconds to attoseconds) [21][22][23][24], and very slow (minutes to hours) [25][26][27] through various publications, the basic principles and techniques for implementing such measurements employing very simple modification to conventional instruments [28][29][30][31][32][33][34][35][36][37][38][39].…”

Section: Introductionmentioning

confidence: 99%

XPS for probing the dynamics of surface voltage and photovoltage in GaN

Sezen¹,

Özbay²,

Süzer³

2014

Applied Surface Science

View full text Add to dashboard Cite

a b s t r a c tWe describe application of two different data gathering techniques of XPS for probing the dynamics of surface voltage and surface photovoltage (SPV) developed in microseconds to seconds time-domain, in addition to the conventional steady-state measurements. For the longer (seconds to milliseconds) regime, capturing the data in the snapshot fashion is used, but for the faster one (down to microseconds), square wave (SQW) electrical pulses at different frequencies are utilized to induce and probe the dynamics of various processes causing the surface voltage, including the SPV, via the changes in the peak positions. The frequency range covers anywhere from 10 −3 to 10 5 Hz for probing changes due to charging (slow), dipolar (intermediate), and electronic (fast) processes associated with the external stresses imposed. We demonstrate its power by application to n-and p-GaN, and discuss the chemical/physical information derived thereof. In addition, the method allows us to decompose and identify the peaks with respect to their charging nature for a composite sample containing both n-and p-GaN moieties.

show abstract

Transient charge carrier distribution at UV-photoexcitedSiO2/Siinterfaces

Cited by 52 publications

References 13 publications

Ultrafast Electron Diffractive Voltammetry: General Formalism and Applications

Ultrafast Electron Diffractive Voltammetry: General Formalism and Applications

X-ray Photoemission for Probing Charging/Discharging Dynamics

XPS for probing the dynamics of surface voltage and photovoltage in GaN

Contact Info

Product

Resources

About