Transient Analysis of Tunnel Field-Effect Transistor with Raised Drain

Kim, Jang Hyun; Kim, Hyun Woo; Shin, Seong-Su; Kim, Sangwan; Park, Byung‐Gook

doi:10.1166/jnn.2019.17018

Cited by 3 publications

(1 citation statement)

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“…However, TFETs suffer from low-level on-current (I on ) as an alternative of MOSFETs. Therefore, there have been much research to improve the I on of TFETs by modifying the materials and structures of TFETs [23][24][25][26][27][28][29][30][31]. Among them, metal gate technology, which is also widely used in MOSFETs, can improve the gate controllability and increase I on by eliminating the polysilicon depletion effect [32].…”

Section: Introductionmentioning

confidence: 99%

Analysis of Work-Function Variation Effects in a Tunnel Field-Effect Transistor Depending on the Device Structure

Kım

Kim

et al. 2020

Applied Sciences

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Metal gate technology is one of the most important methods used to increase the low on-current of tunnel field-effect transistors (TFETs). However, metal gates have different work-functions for each grain during the deposition process, resulting in work-function variation (WFV) effects, which means that the electrical characteristics vary from device to device. The WFV of a planar TFET, double-gate (DG) TFET, and electron-hole bilayer TFET (EHBTFET) were examined by technology computer-aided design (TCAD) simulations to analyze the influences of device structure and to find strategies for suppressing the WFV effects in TFET. Comparing the WFV effects through the turn-on voltage (Vturn-on) distribution, the planar TFET showed the largest standard deviation (σVturn-on) of 20.1 mV, and it was reduced by −26.4% for the DG TFET and −80.1% for the EHBTFET. Based on the analyses regarding metal grain distribution and energy band diagrams, the WFV of TFETs was determined by the number of metal grains involved in the tunneling current. Therefore, the EHBTFET, which can determine the tunneling current by all of the metal grains where the main gate and the sub gate overlap, is considered to be a promising structure that can reduce the WFV effect of TFETs.

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Section: Introductionmentioning

confidence: 99%

Analysis of Work-Function Variation Effects in a Tunnel Field-Effect Transistor Depending on the Device Structure

Kım

Kim

et al. 2020

Applied Sciences

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Improving subthreshold slope in Si/InAs/Ge junctionless tunneling FET-based biosensor by using asymmetric gate oxide thickness for low-power applications: A numerical simulation study

Vadizadeh

Fallahnejad

Sotoodeh

et al. 2023

Materials Science and Engineering: B

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New Tunneling Source Follower with Low 1/f Noise and High Voltage Gain

Kim,

Yoo

et al. 2024

Preprint

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We have designed a tunneling source follower (TSF) for image sensors that achieves high voltage gain (Av) and low 1/f noise simultaneously. The TSF is composed of N-P-N-N, especially the p-doped grounded area, which serves to amplify the insufficient tunneling current, allowing the source follower (SF) to utilize band-to-band tunneling (BTBT). Compared to thermionic emission, tunneling based structures contribute to increasing Av through lower channel length modulation and lower body effect. As a result, TSF achieves a higher Av (~1.0 V/V) than conventional SF (~0.9 V/V). Moreover, the n-doped channel makes the buried conductive channel farther from the interface, lowering the noise. The current noise spectral density (SI) is approximately 10 times lower in TSF than that of in conventional SF. Therefore, our TSF can be a possible candidate for High Av and low 1/f noise image sensors.

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Transient Analysis of Tunnel Field-Effect Transistor with Raised Drain

Cited by 3 publications

References 0 publications

Analysis of Work-Function Variation Effects in a Tunnel Field-Effect Transistor Depending on the Device Structure

Analysis of Work-Function Variation Effects in a Tunnel Field-Effect Transistor Depending on the Device Structure

Improving subthreshold slope in Si/InAs/Ge junctionless tunneling FET-based biosensor by using asymmetric gate oxide thickness for low-power applications: A numerical simulation study

New Tunneling Source Follower with Low 1/f Noise and High Voltage Gain

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