Transient analysis of oblique Hanle signals observed in GaAs

Lin, Zhichao; Kondo, Kenji; Yamamoto, Mikio; Uemura, Tetsuya

doi:10.7567/jjap.55.04en03

Cited by 5 publications

(2 citation statements)

References 37 publications

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“…Soon afterward, we analyzed this behavior using the concept of nuclear-spin temperature for the case with and without nuclear magnetic resonance [53,54]. However, the simulation and the experiment were on a fixed time scale.…”

Section: Introductionmentioning

confidence: 99%

Systematic investigations of transient response of nuclear spins in the presence of polarized electrons

2017

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We electrically probed the transient response of nuclear spins in an n-GaAs channel by performing Hanle signal and spin-valve signal measurements on an all-electrical spin-injection device having a half-metallic spin source of Co 2 MnSi. Furthermore, we simulated the Hanle and spin-valve signals by using the time evolution of nuclear-spin polarization under the presence of polarized electron spins by taking both T 1e and T 1 into consideration, where T −1 1e is the polarization rate of nuclear spins through the transfer of angular momentum from polarized electron spins and T −1 1 is the depolarization rate of nuclear spins through the interaction with the lattice. The simulation results reproduced our experimental results on all the nuclear-spin-related phenomena appearing in the Hanle and spin-valve signals at different measurement conditions, providing quantitative explanation for the transient response of nuclear spins in GaAs to a change in magnetic fields and an estimate of the time scales of T 1e and T 1 . These experimental and simulated results will deepen the understanding of nuclear-spin dynamics in semiconductors.

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Section: Introductionmentioning

confidence: 99%

Systematic investigations of transient response of nuclear spins in the presence of polarized electrons

2017

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“…Indeed, we have demonstrated high-efficiency spin injection from Co 2 MnSi into GaAs via an ultrathin insertion layer of CoFe in a spin injection device, resulting in an electron spin polarization of up to 52% at 4.2 K. 28 This enabled efficient DNP and sensitive detection of the Rabi oscillation even at a low magnetic field and a relatively high temperature. 21 Moreover, we clarified the transient response of nuclear spins against the change in magnetic field experimentally 16 and theoretically, 29,30 although most of the studies on DNP that have used electrical spin injection have been limited to static investigations, [11][12][13]15 in which the magnetic field was swept slowly enough for nuclear spins to reach their equilibrium.…”

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confidence: 96%

Electrical detection of nuclear spin-echo signals in an electron spin injection system

Lin

Rasly

Uemura

2017

Applied Physics Letters

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We demonstrated spin echoes of nuclear spins in a spin injection device with a highly polarized spin source by nuclear magnetic resonance (NMR). Efficient spin injection into GaAs from a half-metallic spin source of Co2MnSi enabled efficient dynamic nuclear polarization (DNP) and sensitive detection of NMR signals even at a low magnetic field of ∼0.1 T and a relatively high temperature of 4.2 K. The intrinsic coherence time T2 of 69Ga nuclear spins was evaluated from the spin-echo signals. The relation between T2 and the decay time of the Rabi oscillation suggests that the inhomogeneous effects in our system are not obvious. This study provides an all-electrical NMR system for nuclear-spin-based qubits.

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Electrical spin injection into AlGaAs/GaAs-based two-dimensional electron gas systems with Co2MnSi spin source up to room temperature

Lin

Pan

Rasly

et al. 2019

Applied Physics Letters

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We demonstrated electrical spin injection into an AlGaAs/GaAs-based high-mobility two-dimensional electron gas (2DEG) system using Co2MnSi as a spin source. A non-local spin-valve signal was observed from 4.2 K to room temperature. Interestingly, the spin-valve signal does not show a monotonic decrease with increasing temperature and reaches a peak at about 80 K. This contrasts with the result observed in bulk GaAs, in which a monotonic decrease in spin-valve signals with increasing temperature was observed. Moreover, the spin-valve signal decreases by a factor of about 5.6 with increasing temperature from 4.2 K to 294 K, and this factor is smaller than those values reported in bulk GaAs devices. This result suggests that the spin-valve signal in a 2DEG device is less sensitive to temperature than that in a bulk device, which is promising for realizing future spin transistors that can operate at room temperature.

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Transient analysis of oblique Hanle signals observed in GaAs

Abstract: A transient response of nuclear spins in GaAs to a change in a magnetic field was analyzed based on the time evolution of nuclear spin temperature. Simulation results well

Cited by 5 publications

References 37 publications

Systematic investigations of transient response of nuclear spins in the presence of polarized electrons

Systematic investigations of transient response of nuclear spins in the presence of polarized electrons

Electrical detection of nuclear spin-echo signals in an electron spin injection system

Electrical spin injection into AlGaAs/GaAs-based two-dimensional electron gas systems with Co2MnSi spin source up to room temperature

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