“…This technology offers significant advantages in terms of electrical performances, e.g., signal transmission, interconnect density and reduced power consumption as well as form factor, heterogeneous integration, and manufacturing cost reduction. However, the TSV process has been demonstrated at the R&D level and the key technical challenges include: (1) high density and high aspect ratio via etching, (2) low temperature processes for passivation and metallization, (3) high speed via filling, (4) thinned wafer/device handling, (5) high speed and precise wafer level alignment and assembly processes, (6) testing and methodology, and (7) competitive cost [1] . The issue of reliability will become extraordinary crucial for this technology to be used in high volume production of electronic devices.…”