Transient ALD simulations for a multi-wafer reactor with trenched wafers

Lankhorst, Adriaan; Paarhuis, Bart; Terhorst, H.; Simons, P.J.P.M.; Kleijn, Chris R.

doi:10.1016/j.surfcoat.2007.04.079

Cited by 53 publications

(40 citation statements)

References 8 publications

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“…[12][13][14][15][16][17] In order to improve the control of the deposition process, several models for ALD have been published in recent years. Some of the models use Monte Carlo simulations to describe the ALD process, [18][19][20][21] other models are designed only for high-aspect-ratio structures, 22,23 partly very complex 24 and partly simplified. 25 Some studies focus only on single parts of ALD, like the sticking coefficient, [26][27][28] the growth mode, or the growth per cycle (GPC).…”

Section: Introductionmentioning

confidence: 99%

Modeling precursor diffusion and reaction of atomic layer deposition in porous structures

Keuter

Menzler

Mauer

et al. 2014

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Atomic layer deposition (ALD) is a technique for depositing thin films of materials with a precise thickness control and uniformity using the self-limitation of the underlying reactions. Usually, it is difficult to predict the result of the ALD process for given external parameters, e.g., the precursor exposure time or the size of the precursor molecules. Therefore, a deeper insight into ALD by modeling the process is needed to improve process control and to achieve more economical coatings. In this paper, a detailed, microscopic approach based on the model developed by Yanguas-Gil and Elam is presented and additionally compared with the experiment. Precursor diffusion and second-order reaction kinetics are combined to identify the influence of the porous substrate's microstructural parameters and the influence of precursor properties on the coating. The thickness of the deposited film is calculated for different depths inside the porous structure in relation to the precursor exposure time, the precursor vapor pressure, and other parameters. Good agreement with experimental results was obtained for ALD zirconiumdioxide (ZrO2) films using the precursors tetrakis(ethylmethylamido)zirconium and O2. The derivation can be adjusted to describe other features of ALD processes, e.g., precursor and reactive site losses, different growth modes, pore size reduction, and surface diffusion.

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Section: Introductionmentioning

confidence: 99%

Modeling precursor diffusion and reaction of atomic layer deposition in porous structures

Keuter

Menzler

Mauer

et al. 2014

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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show abstract

“…It can be encountered, for example, in crystal precipitation and dissolution (see e.g. [8,10,21,22,23]), atomic layer deposition [14], chemical vapor deposition [26] and etching in a heterogenous surface [31,32], concrete carbonation [18,19], or biological applications such as biofilm growth [25] and thrombosis [33].…”

Section: Introductionmentioning

confidence: 99%

Effective Dispersion Equations for Reactive Flows Involving Free Boundaries at the Microscale

Kumar¹,

Noorden²,

Pop³

2011

Multiscale Model. Simul.

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We consider a pore-scale model for reactive flow in a thin 2-D strip, where the convective transport dominates the diffusion. Reactions take place at the lateral boundaries of the strip (the walls), where the reaction product can deposit in a layer with a non-negligible thickness compared to the width of the strip. This leads to a free boundary problem, in which the moving interface between the fluid and the deposited (solid) layer is explicitly taken into account. Using asymptotic expansion methods, we derive an upscaled, one-dimensional model by averaging in the transversal direction. The result is consistent with (Taylor dispersion) models obtained previously for a constant geometry. Finally, numerical computations are presented to compare the outcome of the effective (upscaled) model with the transversally averaged, two dimensional solution.

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“…The grid for this ¼ geometry consisted of 0.5 million hexahedral grid cells. Only 20% of these are located in the silicon melt and a typical melt cell is of size 10 Â 6 Â 10 mm 3 . In X-stream, we can divide the geometry in several domains; each domain may have a different set of sub-models applied for different physics.…”

Section: Simulations Of An Industrial 3d Mc-si Furnacementioning

confidence: 99%

“…flow, melting, radiation heat transfer, turbulence, combustion, kinetic reactions and thin layer deposition [2,3]. The solver in X-stream is based on the finite volume method as described in [4], the grids are 3D multi-block structured, body-fitted and the code is fully parallelized.…”

Section: Introductionmentioning

confidence: 99%

Validation of a 3D multi-physics model for unidirectional silicon solidification

Simons¹,

Lankhorst²,

Habraken³

et al. 2012

Journal of Crystal Growth

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Transient ALD simulations for a multi-wafer reactor with trenched wafers

Cited by 53 publications

References 8 publications

Modeling precursor diffusion and reaction of atomic layer deposition in porous structures

Modeling precursor diffusion and reaction of atomic layer deposition in porous structures

Effective Dispersion Equations for Reactive Flows Involving Free Boundaries at the Microscale

Validation of a 3D multi-physics model for unidirectional silicon solidification

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