Transformation of the InP(001) surface upon annealing in an arsenic flux

Дмитриев, Д. В.; Kolosovsky, D. A.; Гаврилова, Т. А.; Гутаковский, А. К.; Toropov, A. I.; Журавлев, К. С.

doi:10.1016/j.susc.2021.121861

Cited by 9 publications

(10 citation statements)

References 40 publications

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“…The composition of the InPAs solid solution, as well as its lattice constant (a 0 ), were determined by the RHEED method. The method for measuring the composition and lattice constant is described in detail in [4,12]. The fraction of the surface area (S) occupied by InAs islands and its height (H) were measured by an atomic force microscope (AFM) Bruker Multimode 8.…”

Section: Tablementioning

confidence: 99%

“…During the InP substrate annealing, the surface transforms with the InPAs solid solution and InAs islands formation [4,[12][13][14]. Table 2 presents the dependence of x, a 0 , S, H on T sub and the substrate holding time (t) in the arsenic flux.…”

Section: Phosphorus Desorption Determination From Inpmentioning

confidence: 99%

“…The epitaxial growth process begins with the removal of the substrate oxide layer by high-temperature annealing in an ultrahigh vacuum [2,3]. The temperature of complete removal of the oxide layer is higher than the temperature of phosphorus desorption (~ 350-370 ℃) and incongruent InP decomposition (480 ℃) [4][5][6]. Therefore, annealing is performed in a flux of phosphorus or arsenic to prevent dissociation of the surface [7][8].…”

Section: Introductionmentioning

confidence: 99%

“…The mechanism of this exchange interaction is well studied and discussed earlier [6,11]. The presence of the oxide layer on the substrate surface complicates this process and an InP 1-x As x solid solution appears [4,[12][13] with InAs islands [14] during annealing. It was found by the method of reflection high-energy electron diffraction (RHEED) that the composition (х) of the InP 1-x As x solid solution depends on the annealing temperature (T sub ) [4].…”

Section: Introductionmentioning

confidence: 99%

“…The presence of the oxide layer on the substrate surface complicates this process and an InP 1-x As x solid solution appears [4,[12][13] with InAs islands [14] during annealing. It was found by the method of reflection high-energy electron diffraction (RHEED) that the composition (х) of the InP 1-x As x solid solution depends on the annealing temperature (T sub ) [4]. However, at the same time, no changes in х were observed upon holding in an arsenic flux for ~ 5 min.…”

Section: Introductionmentioning

confidence: 99%

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Determination of the phosphorus desorption rate during high-temperature annealing of the InP(001) substrate in an arsenic flux

Kolosovsky

Дмитриев

Ponomarev

et al. 2022

J. Phys.: Conf. Ser.

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In this work, the process of phosphorus desorption from epi-ready InP(001) substrates during high-temperature annealing in an arsenic flux was experimentally investigated. An InPAs solid solution and InAs islands were formed on the surface upon annealing. The composition of the solid solution, the surface area fraction occupied by InAs islands, and its height depend on the annealing temperature. The phosphorus desorption rate was determined from the dependence of the arsenic atoms number on the substrate surface on the annealing temperature and the holding time in the arsenic flux. The phosphorus desorption rate increased from 6.03×1010 s−1⋅ cm−2 at an annealing temperature of 500 °C to 4.38×1011 s−1 ⋅ cm−2 at 540 °C. The activation energy of the phosphorus desorption process was 2.7 ± 0.2 eV.

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Section: Tablementioning

confidence: 99%

Section: Phosphorus Desorption Determination From Inpmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Determination of the phosphorus desorption rate during high-temperature annealing of the InP(001) substrate in an arsenic flux

Kolosovsky

Дмитриев

Ponomarev

et al. 2022

J. Phys.: Conf. Ser.

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Comparison of different passivation layers for GaInAs solar cells grown by solid-source molecular beam epitaxy

Oshima

Ishitsuka²,

Okano³

et al. 2022

Journal of Crystal Growth

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Control of Morphology and Substrate Etching in InAs/InP Droplet Epitaxy Quantum Dots for Single and Entangled Photon Emitters

Gajjela

Sala

Heffernan

et al. 2022

ACS Appl. Nano Mater.

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We present a detailed atomic-resolution study of morphology and substrate etching mechanism in InAs/InP droplet epitaxy quantum dots (QDs) grown by metal–organic vapor phase epitaxy via cross-sectional scanning tunneling microscopy (X-STM). Two different etching processes are observed depending on the crystallization temperature: local drilling and long-range etching. In local drilling occurring at temperatures of ≤500 °C, the In droplet locally liquefies the InP underneath and the P atoms can easily diffuse out of the droplet to the edges. During crystallization, the As atoms diffuse into the droplet and crystallize at the solid–liquid interface, forming an InAs etch pit underneath the QD. In long-range etching, occurring at higher temperatures of >500 °C, the InP layer is destabilized and the In atoms from the surroundings migrate toward the droplet. The P atoms can easily escape from the surface into the vacuum, forming trenches around the QD. We show for the first time the formation of trenches and long-range etching in InAs/InP QDs with atomic resolution. Both etching processes can be suppressed by growing a thin layer of InGaAs prior to the droplet deposition. The QD composition is estimated by finite element modeling in combination with X-STM. The change in the morphology of QDs due to etching can strongly influence the fine structure splitting. Therefore, the current atomic-resolution study sheds light on the morphology and etching behavior as a function of crystallization temperature and provides a valuable insight into the formation of InAs/InP droplet epitaxy QDs which have potential applications in quantum information technologies.

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Transformation of the InP(001) surface upon annealing in an arsenic flux

Cited by 9 publications

References 40 publications

Determination of the phosphorus desorption rate during high-temperature annealing of the InP(001) substrate in an arsenic flux

Determination of the phosphorus desorption rate during high-temperature annealing of the InP(001) substrate in an arsenic flux

Comparison of different passivation layers for GaInAs solar cells grown by solid-source molecular beam epitaxy

Control of Morphology and Substrate Etching in InAs/InP Droplet Epitaxy Quantum Dots for Single and Entangled Photon Emitters

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