“…Despite the enormous attention and progress in recent years, these materials exhibit wide band gaps and low luminescence, which severely restrict their applications in the optoelectronic field. − To solve this problem, many efforts have been devoted, including compositional variation, ,, chemical substitution, , and high-pressure technique. − Especially, high pressure is a powerful tool that can effectively modify the structural and electronic properties of materials without chemically changing the materials . By applying pressure, recent studies successfully reduced the band gap of Cs 2 AgBiBr 6 from ∼2.2 to 1.7 eV and regulated the photoluminescence emission range in Cs 2 AgBiCl 6 and Cs 2 NaBiCl 6 . , Interestingly, the band gap of Cs 2 NaBiCl 6 increases with pressure up to ∼5 GPa, whereas the band gaps of Cs 2 AgBiCl 6 /Cs 2 AgBiBr 6 decrease with pressure in the studied range (<5 GPa for Cs 2 AgBiCl 6 or <3 GPa for Cs 2 AgBiBr 6 ). Then, they transform into a tetrahedral structure at higher pressure.…”