Transferred large area single crystal MoS2 field effect transistors

Abstract

Transfer of epitaxial, two-dimensional (2D) MoS2 on sapphire grown via synthetic approaches is a prerequisite for practical device applications. We report centimeter-scale, single crystal, synthesized MoS2 field effect transistors (FETs) transferred onto SiO2/Si substrates, with a field-effect mobility of 4.5 cm2 V−1 s−1, which is among the highest mobility values reported for the transferred large-area MoS2 transistors. We demonstrate simple and clean transfer of large-area MoS2 films using deionized water, which can effectively avoid chemical contamination. The transfer method reported here allows standard i-line stepper lithography process to realize multiple devices over the entire film area.

Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric

“…However, for monolayer MoS 2 prepared by CVD, the D it at the MoS 2 -SiO 2 interface of device with top-gate configuration can be as high as 1.6 × 10 13  cm −2 eV −1  30. Recently, a transfer technique used to prepare large-area, single-crystal and few-layer MoS 2 films was reported to produce multilayer MoS 2 -SiO 2 interface with D it of 2.1 × 10 13  cm −2 eV −1 in back-gate configuration31. Theoretically, due to more severe fixed charges and interface states between MoS 2 and high- k dielectrics, the D it should be much higher than that at MoS 2 -SiO 2 interface.…”

High current density 2D/3D MoS2/GaN Esaki tunnel diodes

“…The Ga-rich growth conditions resulted in excess Ga metal droplets on the surface, which were removed using hydrochloric acid. p + MoS 2 was transferred onto MBE-grown n + GaN using a benign DI water-based process 28 reported earlier29 . A PDMS stamp was pressed on to p + MoS 2 / sapphire and detached to create an air gap at the interface.…”

Exploring Thermal Properties of M0S2 Using In Situ Quantitative STEM

“…The diffraction pattern (inset) confirms that the sample is single crystalline. (d) Cross-sectional view of the multilayered MoS2 sample [8]. …”

“…In the present work, we measure the DW factors of MoS2 layers as a function of temperature and number of layers in an in situ quantitative STEM condition. Our data can serve as a reference for the characterization of potentially abnormal thermal motions near defects or interfaces, and also provide the information about the size of the electron source incoherence [4] that is difficult to estimate otherwise.We use our layer-by-layer etching technique to precisely control the number of MoS2 layers in the sample [8]. The sample will be directly transported to the MEMS chip of the FEI Nano-EX in situ holder (Fig.…”

“…We use our layer-by-layer etching technique to precisely control the number of MoS2 layers in the sample [8]. The sample will be directly transported to the MEMS chip of the FEI Nano-EX in situ holder (Fig.…”