Transferable GaN Films on Graphene/SiC by van der Waals Epitaxy for Flexible Devices

Liu, Yi; Xu, Yu; Cao, Bing; Li, Zongyao; Zhao, En; Yang, Song; Wang, Chinhua; Wang, Jianfeng; Xu, Ke

doi:10.1002/pssa.201801027

Cited by 15 publications

(12 citation statements)

References 30 publications

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“…It can be released easily from the substrates through mechanical exfoliation. After exfoliation, the epi-layers can be transferred to any other substrates for the fabrication of devices. − And the original substrates can be recycled after epi-layer peeling, which is beneficial to cost saving.…”

Section: Introductionmentioning

confidence: 99%

Remote Epitaxy and Exfoliation of GaN via Graphene

Han

et al. 2022

ACS Appl. Electron. Mater.

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The remote epitaxy of GaN via graphene has attracted much attention due to the potential of easy mechanical exfoliation, and the exfoliated layers can be transferred onto foreign substrates according to the application needs, which is beneficial to improve the performance of GaN-based devices. In this work, a GaN epi-layer was grown by metal–organic chemical vapor deposition on the monolayer-graphene-coated AlN/sapphire or GaN substrates. The influence of growth temperature, carrier gas, and substrate on the exfoliation of the GaN epi-layer was studied. When the growth temperature is no more than 800 °C and N2 is used as the carrier gas, the monolayer graphene can be retained on the AlN/sapphire substrate during the growth process. Thus, the GaN epi-layer can be exfoliated successfully. However, the monolayer graphene will be destroyed under a growth temperature of 850 °C, and lead to the failure of exfoliation. Besides, the monolayer graphene can also be damaged when the H2 carrier gas or GaN substrate is employed with a growth temperature of 800 °C. This causes the GaN epi-layer to be exfoliated not as well. The experimental results illustrate that suitable growth conditions and substrate are important for realizing the exfoliation of a GaN epi-layer.

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Section: Introductionmentioning

confidence: 99%

Remote Epitaxy and Exfoliation of GaN via Graphene

Han

et al. 2022

ACS Appl. Electron. Mater.

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“…Direct mechanical exfoliation using Scotch tape -UV photodetector 2019 [46] Sapphire h-BN AlGaN/GaN/AlN heterostructures -Copper plate Mechanically release the HEMTs using PI tape Indium layer adhered to the copper plate by thermal fusion bonding HEMT 2014 [119] Sapphire BN AlGaN/GaN/AlN heterostructures ----HEMT 2016 [120] Sapphire Photocatalyst 2014 [50] SiO 2 /Si Graphene NiOx/GaN microdisk -Plastic substrates The thermal release tape-supported delamination method…”

Section: Glass Rodsmentioning

confidence: 99%

“…In 2019, Liu et al fabricated a GaN-based flexible UV photodetector device by using vdWE on the MLG/SiC substrate. [46] They first fabricated high-quality single-crystalline GaN films on MLG/SiC via MOCVD. The surface morphology of the asgrown GaN films was smooth and flat, and the RMS roughness of the films was ≈1.68 nm.…”

Section: Photodetectormentioning

confidence: 99%

Recent Advances in Mechanically Transferable III‐Nitride Based on 2D Buffer Strategy

Song

Chen

Yang

et al. 2023

Adv Funct Materials

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Figure 1. An illustration shows the outline of this review article covering flexible nitride devices and exfoliation techniques based on 2D material implementations. The 2D material-based exfoliation methods are mainly divided into: a) thermal release tape-supported delamination method; ((a1) Reproduced with permission. [37] Copyright 2019, Wiley-VCH. (a2) Reproduced under terms of the CC-BY license. [25] Copyright 2020, The Authors, published by American Association for the Advancement of Science. (a3) Reproduced with permission. [38] Copyright 2021, American Chemical Society.) b) chemical release by etching of a sacrificial layer; ((b1) Reproduced with permission. [39] Copyright 2011, Wiley-VCH. (b2) Reproduced with permission. [40] Copyright 2013, American Institute of Physics. (b3) Reproduced under terms of the CC-BY license. [41] Copyright 2014, The Authors, published by American Institute of Physics.) c) mechanical spalling using the stressor layer; ((c1) Reproduced with permission. [26a] Copyright 2014, Springer Nature. (c2) Reproduced with permission. [42] Copyright 2021, American Chemical Society.) d) the transfer of the epitaxial layer by self-separation. ((d1) Reproduced with permission. [43] Copyright 2020, Elsevier. (d2) Reproduced with permission. [44]

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“…Absorbing short-wavelength light much more efficiently, the material is also used as UVsensitive diodes in flame sensors [4][5][6]. More recently, SiC is widely used as substrate material for applications such as extreme condition transistors [7][8][9], tunable photodetecting devices [10], and advanced UV-detectors [11][12][13]. Recent developments in crystal growth also allowed novel structures such as thin films, nanoparticles, heterostructures, etc., for more advanced applications [14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Phonon-assisted optical absorption of SiC polytypes from first principles

Zhang¹,

Kioupakis²

2023

Preprint

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Silicon carbide (SiC) is an indirect-gap semiconductor material widely used in electronic and optoelectronic applications. While experimental measurements of the phonon-assisted absorption coefficient of SiC across its indirect gap have existed for more than fifty years, theoretical investigations of phonon-assisted absorption have been hampered by their excessive computational cost. In this work, we calculate the phonon-assisted temperature-dependent optical absorption spectra of the commonly occurring SiC polytypes (3C, 2H, 4H and 6H), using first-principles approaches based on density functional theory and related techniques. We show that our results agree with experimentally determined absorption coefficients in the spectral region between the direct and indirect band gaps. The temperature dependence of the spectra can be well-predicted with taking the temperature-dependence of the band gaps into account. Lastly, we compare the spectra obtained with second-order perturbation theory to those determined by the special displacement method, and we show that the full consideration of the electronic energy renormalization due to temperature is important to further improve the prediction of the phonon-assisted absorption in SiC. Our insights can be applied to predict the optical spectra of the less common SiC polytypes and other indirect-gap semiconductors in general.

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Transferable GaN Films on Graphene/SiC by van der Waals Epitaxy for Flexible Devices

Cited by 15 publications

References 30 publications

Remote Epitaxy and Exfoliation of GaN via Graphene

Remote Epitaxy and Exfoliation of GaN via Graphene

Recent Advances in Mechanically Transferable III‐Nitride Based on 2D Buffer Strategy

Phonon-assisted optical absorption of SiC polytypes from first principles

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