Transfer printing of nanomaterials and microstructures using a wire bonder

Abstract

Scalable and cost-efficient transfer of nanomaterials and microstructures from their original fabrication substrate to a new host substrate is a key challenge for realizing heterogeneously integrated functional systems, such as sensors, photonics, and electronics. Here we demonstrate a high-throughput and versatile integration method utilizing conventional wire bonding tools to transfer-print carbon nanotubes (CNTs) and silicon microstructures. Standard ball stitch wire bonding cycles were used as scalable and high-speed pick-and-place operations to realize the material transfer. Our experimental results demonstrated successful transfer printing of single-walled CNTs (100 m-diameter patches) from their growth substrate to polydimethylsiloxane, parylene, or Au/parylene electrode substrates, and realization of field emission cathodes made of CNTs on a silicon substrate. Field emission measurements manifested excellent emission performance of the CNT electrodes. Further, we demonstrated the utility of a high-speed wire bonder for transfer printing of silicon microstructures (60 m 60 m 20 m) from the original silicon on insulator substrate to a new host substrate. The achieved placement accuracy of the CNT patches and silicon microstructures on the target substrates were within 4 m. These results show the potential of using established and extremely cost-efficient semiconductor wire bonding infrastructure for transfer printing of nanomaterials and microstructures to realize integrated microsystems and flexible electronics.

Ultrafast and Resist-Free Nanopatterning of 2D Materials by Femtosecond Laser Irradiation

“…To characterize the patterning capabilities of this approach, we patterned an array of nanoholes, lines, and cleared rectangular areas in the 2D materials. Nanohole arrays enable important applications in optical sensing, plasmonics, and electrochemistry, while lines can outline the boundaries of the active areas in functional devices. − Removing the 2D material surrounding the structure of interest is beneficial to ensure electrical insulation between the two portions of 2D material and when transferring the 2D material after patterning . We found the highest resolution of 100 nm for individual holes, a maximum effective speed of 50 mm/s when patterning line arrays, and the possibility to clear a 200 μm × 200 μm substrate area from the 2D material within in less than 3 s of processing (Figure a).…”

“…28−31 Removing the 2D material surrounding the structure of interest is beneficial to ensure electrical insulation between the two portions of 2D material and when transferring the 2D material after patterning. 32 We found the highest resolution of 100 nm for individual holes, a maximum effective speed of 50 mm/s when patterning line arrays, and the possibility to clear a 200 μm × 200 μm substrate area from the 2D material within in less than 3 s of processing (Figure 2a). PtSe 2 , MoS 2, and graphene could all be patterned using the available pulse energy range (up to 550 pJ) and the lowest exposure time allowed by the instrument control software (10 μs per individual spot).…”