Transfer of n-type GaSb onto GaAs substrate by hydrogen implantation and wafer bonding

Zheng, Yanbing; Moran, P. D.; Guan, Z. F.; Lau, S. S.; Hansen, David M.; Kuech, T. F.; Haynes, T. E.; Hoechbauer, T.; Nastasi, M.

doi:10.1007/s11664-000-0181-6

Cited by 20 publications

(16 citation statements)

References 13 publications

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“…The thermal annealing treatment of the H implanted GaSb is studied for time 1 to 80 min under both isothermal and isochronal conditions. In both annealing conditions there is an increase of the lateral size of surface blisters/exfoliated regions (Zheng et al, 2000). The blistering kinetics study showed activation energy value each for the higher and lower annealing temperature regime.…”

Section: Gasbmentioning

confidence: 87%

“…GaSb epitaxial layers can be transferred using H ion implantation and direct wafer bonding technique. The H-implantation in GaSb with a fluence of 5~8 × 10 16 cm -2 at RT results surface blistering after post-implantation annealing at 60-600 °C (Hobart et al, 1999;Zheng et al, 2000). The thermal annealing treatment of the H implanted GaSb is studied for time 1 to 80 min under both isothermal and isochronal conditions.…”

Section: Gasbmentioning

confidence: 99%

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Ion Implantation-Induced Layer Splitting of Semiconductors

Dadwal¹,

Reiche²,

Singh³

2012

Ion Implantation

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Section: Gasbmentioning

confidence: 87%

Section: Gasbmentioning

confidence: 99%

Ion Implantation-Induced Layer Splitting of Semiconductors

Dadwal¹,

Reiche²,

Singh³

2012

Ion Implantation

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“…71 Subsequently, Zheng et al also performed H implantation-induced blistering/splitting studies in GaSb. 72 The implantation involved 150-keV H + ions at a dose of a few times 10 16 cm À2 . A study of the blistering kinetics was also carried out, and the Arrhenius plot of blistering time as a function of annealing temperature (in the range of 75°C to 230°C) showed two activation energies: 0.30 eV in the temperature range of 90°C to 230°C and 1.8 eV below the temperature of 90°C.…”

Section: Other Semiconductorsmentioning

confidence: 99%

The Phenomenology of Ion Implantation-Induced Blistering and Thin-Layer Splitting in Compound Semiconductors

Singh

Christiansen

Moutanabbir

et al. 2010

Journal of Elec Materi

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Hydrogen and/or helium implantation-induced surface blistering and layer splitting in compound semiconductors such as InP, GaAs, GaN, AlN, and ZnO are discussed. The blistering phenomenon depends on many parameters such as the semiconductor material, ion fluence, ion energy, and implantation temperature. The optimum values of these parameters for compound semiconductors are presented. The blistering and splitting processes in silicon have been studied in detail, motivated by the fabrication of the widely used silicon-on-insulator wafers. Hence, a comparison of the blistering process in Si and compound semiconductors is also presented. This comparative study is technologically relevant since ion implantation-induced layer splitting combined with direct wafer bonding in principle allows the transfer of any type of semiconductor layer onto any foreign substrate of choice-the technique is known as the ion-cut or Smart-Cut (TM) method. For the aforementioned compound semiconductors, investigations regarding layer transfer using the ion-cut method are still in their infancy. We report feasibility studies of layer transfer by the ion-cut method for some of the most important and widely used compound semiconductors. The importance of characteristic values for successful wafer bonding such as wafer bow and surface flatness as well as roughness are discussed, and difficulties in achieving some of these values are pointed out

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“…As a result, this has motivated a variety of alternative substrate solutions. These include mismatched growth on specially designed buffer layers [60]; GaSb transfer by hydrogen implantation [61]; lateral epitaxial overgrowth [62]; and wafer bonding [63,64] or wafer fusion [65] followed by epitaxial transfer.…”

Section: Gasb Substratesmentioning

confidence: 99%

Progress and continuing challenges in GaSb-based III–V alloys and heterostructures grown by organometallic vapor-phase epitaxy

Wang

2004

Journal of Crystal Growth

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This paper discusses progress in the preparation of mid-IR GaSb-based III-V materials grown by organometallic vapor phase epitaxy (OMVPE). The growth of these materials is complex, and fundamental and practical issues associated with their growth are outlined. Approaches that have been explored to further improve the properties and performance are briefly reviewed.Recent materials and device results on GaInAsSb bulk layers and GaInAsSb/AlGaAsSb heterostructures, grown lattice matched to GaSb, are presented. State-of-the-art GaInAsSb materials and thermophotovoltaic devices have been achieved. This progress establishes the high potential of OMVPE for mid-IR GaSb-based devices. 2 IntroductionGaSb-based III-V semiconductor alloys are attractive for optoelectronic devices such as midinfrared lasers, detectors, and thermophotovoltaics (TPVs); and electronic devices such as highspeed transistors and resonant-tunneling diodes [1]. Alloys of particular interest are based on the binaries GaSb, AlSb, InSb, GaAs, AlAs, and InAs. As shown in Fig. 1 GaSb-based heterostructures have been successfully grown by all of the major epitaxial techniques, including liquid phase epitaxy, molecular beam epitaxy (MBE), and organometallic vapor phase epitaxy (OMVPE). While each of these technologies must contend with numerous challenges that are specific to the method of choice, several fundamental issues related to Sbcontaining III-V alloys exist. These include the low volatility of Sb compared to P-and Asbased alloys, which necessitates stringent control of V/III ratio; the requirement to use low growth temperatures (450 to 600 °C); the existence of a large solid phase miscibility gap for many Sb-containing alloys; and the affinity of AlSb-based alloys to incorporate O and C. As a consequence, growth of Sb-based alloys differs significantly from the more conventional As-and P-based materials, which certainly has made the development of the GaSb-based materials and devices very challenging.This paper discusses both the fundamental and practical issues associated with the growth of mid-IR GaSb-based III-V alloys grown by OMVPE, and briefly reviews approaches that have been explored to further improve the properties and performance of bulk layers as well as heterostructures. Growth considerations include the importance of suitable organometallic precursors and control of V/III ratio; miscibility gaps in ternary and quaternary alloys; C and O contamination in AlSb-based alloys; in-situ monitoring; GaSb substrate quality and preparation;and heterostructure growth. Recent materials and device results are limited to GaInAsSb and 3 AlGaAsSb alloys grown lattice matched to GaSb, since two comprehensive reviews on OMVPE growth of Sb-based materials were recently published [5,6]. Growth considerations and brief review of previous work Fundamental differences between Sb-based and P-or As-based III-V alloysOne of the early premises of OMVPE growth of III-V semiconductors was the utilization of precursors based on group III organometallics a...

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Transfer of n-type GaSb onto GaAs substrate by hydrogen implantation and wafer bonding

Cited by 20 publications

References 13 publications

Ion Implantation-Induced Layer Splitting of Semiconductors

Ion Implantation-Induced Layer Splitting of Semiconductors

The Phenomenology of Ion Implantation-Induced Blistering and Thin-Layer Splitting in Compound Semiconductors

Progress and continuing challenges in GaSb-based III–V alloys and heterostructures grown by organometallic vapor-phase epitaxy

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