Transfer-free, scalable photodetectors based on MOCVD-grown 2D-heterostructures

Hutten, U.; Daniel, Leon; Grundmann, Annika; Stracke, Nicole; Abdelbaky, Mohamed; Beckmann, Yannick; Heuken, M.; Mertin, W.; Kalisch, H.; Vescan, A.; Bacher, G.; Kümmell, T.

doi:10.1088/2053-1583/ac186d

Cited by 11 publications

(17 citation statements)

References 63 publications

(116 reference statements)

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“…We note that the measured photoresponsivity depends on the contact spacing, as previously shown for a similar device as studied here. [ 79 ] Applying the expected quadratic scaling of the photocurrent with contact spacing, we indeed arrive at comparable or slightly higher photoresponsivity values as compared to previous work. [ 79 ]…”

Section: Resultssupporting

confidence: 79%

See 1 more Smart Citation

Large‐Area Growth of MoS₂/WS₂ Heterostructures by a Sequential Atomic Layer Deposition and Spin‐Coating Approach

Pareek

Gonzalez

Grewo

et al. 2022

Adv Materials Inter

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research and development in this area has demonstrated a host of different material platforms with unique and precisely tunable properties utilizing various quantum confinement effects. [1][2][3][4] Especially the large surface area of 2D semiconducting materials enables prominent interactions with its environment, resulting in a wide range of possible sensing applications, [5] strong interlayer interactions in van der Waals (vdW) heterostructures, [6] and large exciton binding energies. [7] Transition metal di-chalcogenides (TMDCs) are among the most promising 2D semiconductors, owing to their variable electron energy band gaps [8][9][10] and alignment dependent optoelectronic properties in Moiré heterostructures. [11] TMDC materials also provide an opportunity to form heterostructures with atomically sharp interfaces due to the weak vdW interlayer interactions, making them a perfect platform to investigate interlayer interactions at the atomic scale and to develop lowdimension devices with new functionalities. [12][13][14] Most of the device designs showing unique optoelectronic properties are largely based on layers obtained by mechanical exfoliation, that is, by cleaving from bulk TMDCs crystals, [15][16][17] allowing for an understanding of their fundamental physical properties. However, this approach is not suitable for industrial scale device fabrication. [18] Extensive research efforts are being made on developing and fine tuning bottom-up approaches to grow individual layers of TMDCs single-and few-layer films. In particular, large area (millimeter to centimeter range) growth of TMDC layers has been demonstrated using various types of chemical vapor deposition (CVD), [19][20][21][22] atomic layer deposition (ALD), [23][24][25][26] as well as molecular beam epitaxy, [27][28][29] and solution-based deposition approaches. [22,[30][31][32][33][34][35][36][37] A broad range of physical characteristics have been reported, including film morphology, domain size, and charge mobility. [22,26] For TMDC devices, the controlled growth of vdW heterostructures is a prerequisite, which, however, is challenging due to the weak interaction between the growing layers and, up to now, was only described in a few studies. For example, microscale lateral TMDC heterostructures were obtained by the subsequent growth of two TMDC materials, resulting in dispersed flakes laterally connected in some cases. [38][39][40][41][42][43][44] For Despite the plethora of intriguing phenomena observed in heterostructure stacks of 2D transition metal dichalcogenide (2D-TMDC) flakes, their application in functional devices is still hampered due to the lack of reliable growth methodologies for large-area heterostructures. Here, a scalable process for obtaining as-grown transition metal di-chalcogenide heterostructures by a combination of atomic layer deposition of monolayer MoS 2 and solutionbased processing of ultrathin WS 2 is presented. Spatially uniform optical and electrical characteristics of the individual TMDC layers and heterostructure...

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Section: Resultssupporting

confidence: 79%

“…[ 79 ] Applying the expected quadratic scaling of the photocurrent with contact spacing, we indeed arrive at comparable or slightly higher photoresponsivity values as compared to previous work. [ 79 ]…”

Section: Resultssupporting

confidence: 78%

Large‐Area Growth of MoS₂/WS₂ Heterostructures by a Sequential Atomic Layer Deposition and Spin‐Coating Approach

Pareek

Gonzalez

Grewo

et al. 2022

Adv Materials Inter

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“…PECVD is simple, low-cost, and scalable, enabling the deposition of 2D materials films up to wafer scale [134][135][136][137]. MOCVD is an emerging method for 2D materials, which can grow uniform and high-performance 2D materials [138][139][140].…”

Section: Preparation Of 2d Materialsmentioning

confidence: 99%

2D materials and van der Waals heterojunctions for neuromorphic computing

Zhang

Yang

et al. 2022

Neuromorph. Comput. Eng.

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Neuromorphic computing systems employing artificial synapses and neurons are expected to overcome the limitations of the present von Neumann computing architecture in terms of efficiency and bandwidth limits. Traditional neuromorphic devices have used 3D bulk materials, and thus, the resulting device size is difficult to be further scaled down for high density integration, which is required for highly integrated parallel computing. The emergence of two-dimensional (2D) materials offers a promising solution, as evidenced by the surge of reported 2D materials functioning as neuromorphic devices for next-generation computing. In this review, we summarize the 2D materials and their heterostructures to be used for neuromorphic computing devices, which could be classified by the working mechanism and device geometry. Then, we survey neuromorphic device arrays and their applications including artificial visual, tactile, and auditory functions. Finally, we discuss the current challenges of 2D materials to achieve practical neuromorphic devices, providing a perspective on the improved device performance, and integration level of the system. This will deepen our understanding of 2D materials and their heterojunctions and provide a guide to design highly performing memristors. At the same time, the challenges encountered in the industry are discussed, which provides a guide for the development direction of memristors.

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“…Two-dimensional (2D) materials have become highly attractive for optoelectronic device applications as they are characterized by strong light–matter interactions. − Combined with their mechanical strength, these materials are promising candidates for flexible device applications. − The van der Waals bonding between individual material layers allows the combination of conducting, semiconducting, and insulating 2D materials beyond the restraint of crystal lattice matching. − Such heterostructures offer versatile platforms for device integration − and can be used, e.g., for promoting charge carrier recombination in light-emitting diodes , or for triggering efficient charge carrier separation in photodetectors. − Heterostructure photodetectors consisting of optically active semiconducting transition-metal dichalcogenides (TMDCs) and highly conductive graphene benefit from broadband light detection, , high responsivities, − fast photoresponses, and high detectivities …”

Section: Introductionmentioning

confidence: 99%

“…Exfoliated 2D materials have been used extensively during the last decade to demonstrate feasibility, and the principally easy device integration opens multiple pathways to exciting applications. ,− Technically delicate transfer processes that are often involved in device fabrication result in contaminations, unintentional doping, and poorly defined interfaces between the materials. − For obtaining more defined interfaces, TMDCs have been grown directly onto graphene transferred on dielectric substrates, which led to improved charge carrier separation at the heterointerface and thus to higher values of the photocurrent . To approach industrially relevant standards, direct gas-phase synthesis of 2D heterostructures ,− on the target substrate is highly favorable. Since graphene has been successfully grown on sapphire, it is now possible to realize graphene–TMDC heterostructures with sharp interfaces , that are promising for high responsivities of 2D heterostructure photodetectors.…”

Section: Introductionmentioning

confidence: 99%

Role of Surface Adsorbates on the Photoresponse of (MO)CVD-Grown Graphene–MoS₂ Heterostructure Photodetectors

Beckmann

Grundmann

Daniel

et al. 2022

ACS Appl. Mater. Interfaces

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A promising strategy toward ultrathin, sensitive photodetectors is the combination of a photoactive semiconducting transition-metal dichalcogenide (TMDC) monolayer like MoS2 with highly conductive graphene. Such devices often exhibit a complex and contradictory photoresponse as incident light can trigger both photoconductivity and photoinduced desorption of molecules from the surface. Here, we use metal–organic chemical vapor deposition (MOCVD) to directly grow MoS2 on top of graphene that is deposited on a sapphire wafer via chemical vapor deposition (CVD) for realizing graphene–MoS2 photodetectors. Two-color optical pump–electrical probe experiments allow for separation of light-induced carrier transfer across the graphene–MoS2 heterointerface from adsorbate-induced effects. We demonstrate that adsorbates strongly modify both magnitude and sign of the photoconductivity. This is attributed to a change of the graphene doping from p- to n-type in case adsorbates are being desorbed, while in either case, photogenerated electrons are transferred from MoS2 to graphene. This nondestructive probing method sheds light on the charge carrier transfer mechanisms and the role of adsorbates in two-dimensional (2D) heterostructure photodetectors.

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Transfer-free, scalable photodetectors based on MOCVD-grown 2D-heterostructures

Cited by 11 publications

References 63 publications

Large‐Area Growth of MoS₂/WS₂ Heterostructures by a Sequential Atomic Layer Deposition and Spin‐Coating Approach

Large‐Area Growth of MoS₂/WS₂ Heterostructures by a Sequential Atomic Layer Deposition and Spin‐Coating Approach

2D materials and van der Waals heterojunctions for neuromorphic computing

Role of Surface Adsorbates on the Photoresponse of (MO)CVD-Grown Graphene–MoS₂ Heterostructure Photodetectors

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Transfer-free, scalable photodetectors based on MOCVD-grown 2D-heterostructures

Cited by 11 publications

References 63 publications

Large‐Area Growth of MoS2/WS2 Heterostructures by a Sequential Atomic Layer Deposition and Spin‐Coating Approach

Large‐Area Growth of MoS2/WS2 Heterostructures by a Sequential Atomic Layer Deposition and Spin‐Coating Approach

2D materials and van der Waals heterojunctions for neuromorphic computing

Role of Surface Adsorbates on the Photoresponse of (MO)CVD-Grown Graphene–MoS2 Heterostructure Photodetectors

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Large‐Area Growth of MoS₂/WS₂ Heterostructures by a Sequential Atomic Layer Deposition and Spin‐Coating Approach

Large‐Area Growth of MoS₂/WS₂ Heterostructures by a Sequential Atomic Layer Deposition and Spin‐Coating Approach

Role of Surface Adsorbates on the Photoresponse of (MO)CVD-Grown Graphene–MoS₂ Heterostructure Photodetectors