Tracing the origin of oxygen for La0.6Sr0.4MnO3thin film growth by pulsed laser deposition

Chen, J; Döbeli, M.; Stender, Dieter; Lee, M M; Conder, K.; Schneider, Claudia; Wokaun, Alexander; Lippert, Thomas

doi:10.1088/0022-3727/49/4/045201

Cited by 25 publications

(62 citation statements)

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“…[10,[12][13][14][15][16][17][18] The propagation dynamics and composition of the plume has been studied by imaging and spectrally resolving the self emission of exited species (often neutral species) in the expanding plume with fast photography techniques. From these studies, much insight has been obtained regarding the interaction of plume constituents and background gas.…”

Section: Plume and Film Characteristicsmentioning

confidence: 99%

“…[32] It is suggested that the oxygen in the film is administered by both metal-oxygen and the oxygen background, depending on background gas pressure. In more detailed work from the same authors, the origin of oxygen in the film is investigated using a 18 O isotope labelled La 0.6 Sr 0. 4 MnO 3 target, where the 18 O isotope is used as a tracer.…”

Section: Plume and Film Characteristicsmentioning

confidence: 99%

“…In more detailed work from the same authors, the origin of oxygen in the film is investigated using a 18 O isotope labelled La 0.6 Sr 0. 4 MnO 3 target, where the 18 O isotope is used as a tracer. [18] It is shown that for an oxygen pressure >10 −2 mbar, the oxygen background gas pressure is the most important source to contribute to the oxygen composition of the as-grown thin films, instead of the oxygen from target or substrate.…”

Section: Plume and Film Characteristicsmentioning

confidence: 99%

“…4 MnO 3 target, where the 18 O isotope is used as a tracer. [18] It is shown that for an oxygen pressure >10 −2 mbar, the oxygen background gas pressure is the most important source to contribute to the oxygen composition of the as-grown thin films, instead of the oxygen from target or substrate. When growing films at 10 −1 mbar on 18 O 2 exchanged substrates, it is stated that almost all oxygen originates from the background gas and almost none from the substrate or target.…”

Section: Plume and Film Characteristicsmentioning

confidence: 99%

“…[18] It is shown that for an oxygen pressure >10 −2 mbar, the oxygen background gas pressure is the most important source to contribute to the oxygen composition of the as-grown thin films, instead of the oxygen from target or substrate. When growing films at 10 −1 mbar on 18 O 2 exchanged substrates, it is stated that almost all oxygen originates from the background gas and almost none from the substrate or target. These studies identify the complex role ascribed to oxygen in the PLD process and subsequent characteristics of the grown film, explaining the typical narrow pressure window in which a desired composition and crystalline structure is obtained.…”

Section: Plume and Film Characteristicsmentioning

confidence: 99%

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Stoichiometry control in oxide thin films by pulsed laser deposition

Groenen

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Cover image: Reflection High Energy Electron Diffraction patterns of SrTiO 3 thin films on SrTiO 3 substrates grown with pulsed laser deposition at various partial oxygen background gas pressure conditions. The colorscale and the level of detail of the image are manipulated.The research described in this thesis was carried out within the Inorganic Materials Science group, Department of Science and Technology and the MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands. This research is supported by the Dutch Technology Foundation STW, which is part of the Netherlands Organization for Scientific Research (NWO) and partly funded by the Ministry of Economic Affairs (project number 10760). Chapter 1 Stoichiometry control in oxide thin films IntroductionIn 1959 Richard Feynman for the first time discussed the synthesis of materials via manipulation of single atoms in his famous talk 'There's Plenty of Room at the Bottom'. 1 Since then, the advances and achievements in the field of nanotechnology have lead to functionalised materials, devices and technology with increasingly smaller integrated circuits and denser data storage. The term nanotechnology itself was first used by Norio Taniguchi, professor of Tokyo University of Science in 1974, to describe processes such as thin film deposition exhibiting control on the order of a nanometer. [1] His definition of nanotechnology, Nano-technology mainly consists of the processing of separation, consolidation, and deformation of materials by one atom or one molecule, still stands today and romantically summarises the essence of materials science and engineering at nanoscale dimensions. Advances in fabrication processes and characterisation techniques have made it possible to synthesise, characterise and manipulate material at the atomic scale. At these dimensions, quantum effects dominate the properties of materials such that intrinsic material bulk properties are altered or lost and new phenomena and properties can emerge. This creates new pathways and possibilities for new applications. A good example is the giant magnetoresistance effect, widely applied in magnetic field sensors in hard disk drives and all sorts of sensors. A highly interesting class of materials are complex metal oxides, for their rich variety of interesting physical properties such as ferroelectricity, ferromagnetism and superconductivity. A widely investigated sub-group within the complex metal oxides are the perovskite metal oxides. The term 'perovskite' originates from the discovery of the calcium titanium oxide (CaTiO 3 ) mineral in 1839, but is nowadays used to describe the family of crystals with an ABO 3 stoichiometry. The unit cell of perovskites has rare-earth or metal A and B cations and six oxygen atoms, forming a BO 6 oxygen octahedra in the centre of the cubic with the A cation in its corners.The properties of (perovskite) complex metal oxides are highly sensitive to slight deviation from the ideal crystal stoichiometry. Therefore, a gen...

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Section: Plume and Film Characteristicsmentioning

confidence: 99%

Section: Plume and Film Characteristicsmentioning

confidence: 99%

Section: Plume and Film Characteristicsmentioning

confidence: 99%

Section: Plume and Film Characteristicsmentioning

confidence: 99%

Section: Plume and Film Characteristicsmentioning

confidence: 99%

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Stoichiometry control in oxide thin films by pulsed laser deposition

Groenen

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Pulsed Laser Deposition

Lorenz

2019

Digital Encyclopedia of Applied Physics

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This article is intended for both undergraduate and advanced students, and for physicists and materials scientists, who want to know more about the basics and the state of the art of pulsed laser deposition (PLD). PLD is a rapidly developing and widespread growth technique for both thin films and nanostructures, mainly in research environments, but with beginning industrial impact. Here, the important basic and technological aspects of PLD are treated in a concise way, and possible additional reading is given.

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Unravelling the Origin of Ultra‐Low Conductivity in SrTiO₃ Thin Films: Sr Vacancies and Ti on A‐Sites Cause Fermi Level Pinning

Morgenbesser

Viernstein

Schmid

et al. 2022

Adv Funct Materials

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Different SrTiO 3 thin films are investigated to unravel the nature of ultralow conductivities recently found in SrTiO 3 films prepared by pulsed laser deposition. Impedance spectroscopy reveals electronically pseudo-intrinsic conductivities for a broad range of different dopants (Fe, Al, Ni) and partly high dopant concentrations up to several percent. Using inductively-coupled plasma optical emission spectroscopy and reciprocal space mapping, a severe Sr deficiency is found and positron annihilation lifetime spectroscopy revealed Sr vacancies as predominant point defects. From synchrotron-based X-ray standing wave and X-ray absorption spectroscopy measurements, a change in site occupation is deduced for Fe-doped SrTiO 3 films, accompanied by a change in the dopant type. Based on these experiments, a model is deduced, which explains the almost ubiquitous pseudo-intrinsic conductivity of these films. Sr deficiency is suggested as key driver by introducing Sr vacancies and causing site changes (Fe Sr and Ti Sr ) to accommodate nonstoichiometry. Sr vacancies act as mid-gap acceptor states, pinning the Fermi level, provided that additional donor states (most probably •• Ti Sr ) are present. Defect chemical modeling revealed that such a Fermi level pinning also causes a self-limitation of the Ti site change and leads to a very robust pseudo-intrinsic situation, irrespective of Sr/Ti ratios and doping.

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Tracing the origin of oxygen for La_0.6Sr_0.4MnO₃thin film growth by pulsed laser deposition

Cited by 25 publications

References 37 publications

Stoichiometry control in oxide thin films by pulsed laser deposition

Stoichiometry control in oxide thin films by pulsed laser deposition

Pulsed Laser Deposition

Unravelling the Origin of Ultra‐Low Conductivity in SrTiO₃ Thin Films: Sr Vacancies and Ti on A‐Sites Cause Fermi Level Pinning

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Tracing the origin of oxygen for La0.6Sr0.4MnO3thin film growth by pulsed laser deposition

Cited by 25 publications

References 37 publications

Stoichiometry control in oxide thin films by pulsed laser deposition

Stoichiometry control in oxide thin films by pulsed laser deposition

Pulsed Laser Deposition

Unravelling the Origin of Ultra‐Low Conductivity in SrTiO3 Thin Films: Sr Vacancies and Ti on A‐Sites Cause Fermi Level Pinning

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Product

Resources

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Tracing the origin of oxygen for La_0.6Sr_0.4MnO₃thin film growth by pulsed laser deposition

Unravelling the Origin of Ultra‐Low Conductivity in SrTiO₃ Thin Films: Sr Vacancies and Ti on A‐Sites Cause Fermi Level Pinning